Abstract: A wick sheet for a vapor chamber includes a first main body surface, a second main body surface located opposite the first main body surface, a frame body section, and a plurality of land sections apart from each other within the frame body section. A vapor path through which a vapor of a working fluid travels is between the plurality of land sections. A liquid flow channel section that communicates with the vapor path and through which the working fluid in a liquid form travels is at the second main body surface side of at least one of the land sections. A bridge that couples the land sections to the frame body section or that couples the land sections to each other is included. The bridge is reduced in thickness from at least one of the first main body surface side and the second main body surface side.

Abstract: A vacuum processing apparatus includes a transfer unit disposed at a center thereof, plural processing chambers, each processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas, and a mass flow controller unit interposed between two of the processing chambers for supplying gas to the chambers.

Abstract: A vacuum processing apparatus includes a transfer unit disposed at a center thereof, plural processing chambers, each processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas, and a mass flow controller unit interposed between two of the processing chambers for supplying gas to the chambers.

Abstract: A vacuum processing apparatus includes a transfer unit disposed at a center thereof, plural processing chambers, each processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas, and a mass flow controller unit interposed between two of the processing chambers for supplying gas to the chambers.

Abstract: A vacuum processing apparatus comprising a transfer unit disposed at a center thereof, plural processing chambers, each processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas; and amass flow controller unit interposed between two processing chambers for supplying gas to the chambers.

Abstract: A vacuum processing apparatus includes an outer chamber comprising a vacuum container, an inner chamber in which a plasma used for processing a wafer is generated, the inner chamber being detachably disposed inside of the outer chamber, a wafer holder on which the wafer is located is disposed inside of the inner chamber, and an exhausting device disposed below the wafer holder which exhausts the inside of the inner chamber. The inner chamber is sealed in air-tight manner with respect to a space between the inner chamber and the outer chamber while the space is maintained at a vacuum pressure.

Abstract: A vacuum processing apparatus comprising a transfer unit disposed at a center thereof, plural processing chambers, each processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas; and amass flow controller unit interposed between two processing chambers for supplying gas to the chambers.

Abstract: A vacuum processing apparatus includes an outer chamber comprising a vacuum container, an inner chamber in which a plasma used for processing a wafer is generated, the inner chamber being detachably disposed inside of the outer chamber, a wafer holder on which the wafer is located is disposed inside of the inner chamber, and an exhausting device disposed below the wafer holder which exhausts the inside of the inner chamber. The inner chamber is sealed in air-tight manner with respect to a space between the inner chamber and the outer chamber while the space is maintained at a vacuum pressure.

Abstract: A vacuum processing apparatus includes a transfer unit disposed at a center thereof, plural processing chambers, each processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas, and a mass flow controller unit interposed between two of the processing chambers for supplying gas to the chambers.

Abstract: A vacuum processing apparatus comprising a transfer unit disposed at a center thereof, plural processing chambers, each processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas; and a mass flow controller unit interposed between two processing chambers for supplying gas to the chambers.

Abstract: A vacuum processing apparatus includes a vacuum processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas. The vacuum processing chamber has an axisymmetric structure, including a double wall structure, and a gate valve for sealing an opening through which the object enters the processing chamber.

Abstract: In power supply and a semiconductor making apparatus and a semiconductor fabricating method using the same, an abnormality can be detected when an offset occurs in a part constituting a closed-loop system of high-frequency power supply or dc power supply for a semiconductor making apparatus. Power supply for receiving a power value setting signal to set strength of power and a power on/off instruction to set on or off of outputting of the power interrupts the supply of the power even in a state in which a subsequent power on/off instruction is on if a power sense signal according to a value obtained by sensing the power exceeds a predetermined value when the power on/off instruction is off.

Abstract: A plasma processing apparatus and method are capable of performing etching with high precision without damaging the semiconductor wafer. The plasma processing apparatus has a plasma generation power supply for generating a plasma within a processing chamber; a high-frequency power supply for applying a high frequency wave to a sample stage installed within the processing chamber; and control means for controlling the plasma generation power supply or the high-frequency power supply based on parameter settings for an output intensity and an output mode for each process step. In this regard, when the process steps are switched, the control means compares parameters for a current process step with those for a next process step and then switches either the output intensities or the output modes before switching the output modes or the output intensities, respectively.

Abstract: A vacuum processing apparatus includes a vacuum processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas. The vacuum processing chamber has an axisymmetric structure, including a double wall structure, and a gate valve for sealing an opening through which the object enters the processing chamber.

Abstract: A vacuum processing apparatus including a transfer chamber inside of which an object wafer to be processed is transferred, and two processing chambers disposed outside of the transfer chamber and attached to the transfer chamber in a detachable manner. The inside of each processing chamber is decompressed so as to process the wafer being placed therein using a plasma generated from a processing gas supplied thereto, and two supply units supply the processing gas to the two processing chambers, respectively. The two supply units are disposed vertically outside of the transfer chamber and between the two processing chambers.

Abstract: A vacuum processing apparatus comprising a transfer unit 112 disposed at a center thereof, plural processing chambers 103, 104, each processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas; and a mass flow controller unit 107 interposed between two processing chambers for supplying gas to the chambers.

Abstract: In power supply and a semiconductor making apparatus and a semiconductor fabricating method using the same, an abnormality can be detected when an offset occurs in a part constituting a closed-loop system of high-frequency power supply or dc power supply for a semiconductor making apparatus. Power supply for receiving a power value setting signal to set strength of power and a power on/off instruction to set on or off of outputting of the power interrupts the supply of the power even in a state in which a subsequent power on/off instruction is on if a power sense signal according to a value obtained by sensing the power exceeds a predetermined value when the power on/off instruction is off.

Abstract: In power supply and a semiconductor making apparatus and a semiconductor fabricating method using the same, an abnormality can be detected when an offset occurs in a part constituting a closed-loop system of high-frequency power supply or dc power supply for a semiconductor making apparatus. Power supply for receiving a power value setting signal to set strength of power and a power on/off instruction to set on or off of outputting of the power interrupts the supply of the power even in a state in which a subsequent power on/off instruction is on if a power sense signal according to a value obtained by sensing the power exceeds a predetermined value when the power on/off instruction is off.

Abstract: There is provided a plasma processing apparatus and method capable of performing etching with high precision without damaging the semiconductor wafer. The plasma processing apparatus comprises a processing chamber for processing a sample; a plasma generation power supply for generating a plasma within the processing chamber; a high-frequency power supply for applying a high frequency wave to a sample stage installed within the processing chamber; and control means for controlling the plasma generation power supply or the high-frequency power supply based on parameter settings for an output intensity and an output mode for each process step; wherein when the process steps are switched, the control means compares parameters for a current process step with those for a next process step and then switches either the output intensities or the output modes before switching the output modes or the output intensities, respectively.

Abstract: In power supply and a semiconductor making apparatus and a semiconductor fabricating method using the same, an abnormality can be detected when an offset occurs in a part constituting a closed-loop system of high-frequency power supply or dc power supply for a semiconductor making apparatus. Power supply for receiving a power value setting signal to set strength of power and a power on/off instruction to set on or off of outputting of the power interrupts the supply of the power even in a state in which a subsequent power on/off instruction is on if a power sense signal according to a value obtained by sensing the power exceeds a predetermined value when the power on/off instruction is off.