Abstract: A method of forming a pattern includes forming an underlayer on an etching target layer by a chemical vapor deposition (CVD) process, the underlayer including a silicon compound combined with a photoacid generator (PAG), forming a photoresist layer on the underlayer, irradiating extreme ultraviolet (EUV) light on the photoresist layer to form a photoresist pattern, and etching the etching target layer using the photoresist pattern as an etching mask.

Abstract: A method of manufacturing a semiconductor device is provided. A substrate including a structure in which a hole is formed is prepared. Precursors including a nickel alkoxide compound are vaporized. A nickel-containing layer is formed in the hole by providing the vaporized precursors including the nickel alkoxide compound onto the substrate.

Abstract: The inventive concepts provide semiconductor devices and methods for manufacturing the same in which the method includes forming a capacitor including a bottom electrode, a dielectric layer and a top electrode sequentially stacked on a substrate, and also where formation of the top electrode includes forming a first metal nitride layer on the dielectric layer, and forming a second metal nitride layer on the first metal nitride layer, in which the first metal nitride layer is disposed between the dielectric layer and the second metal nitride layer, and the first metal nitride layer is formed at a temperature lower than a temperature at which the second metal nitride layer is formed.

Abstract: The ?-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the ?-ketoimine ligand. A method of forming the ?-ketoimine ligand and a method of forming a thin film using the metal complex compound including ?-ketoimine ligand are provided.

Abstract: The ?-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the ?-ketoimine ligand. A method of forming the ?-ketoimine ligand and a method of forming a thin film using the metal complex compound including ?-ketoimine ligand are provided.

Abstract: Provided are a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and a method of forming a thin film including the heterostructured nickel compound. The method includes forming a nickel-containing layer on a substrate by using the heterostructured nickel compound including the nickel amidinate ligand and the aliphatic alkoxy group.

Abstract: An organometallic precursor is represented by a chemical formula of Xn(M)(R1)m(R2)k. M is a central metal. X is a ligand of M and one of 6,6-dimethylfulvenyl, indenyl, cyclopentadienyl and cyclopentadienyl substituted with an amino group. R1 and R2 are ligands of M, and each independently an amino group or an ethylenediamino group. Each n, m and k is a positive integer, and a sum of n, m and k is equal to 3 or 4.

Abstract: A method of manufacturing a semiconductor device is provided. A substrate including a structure in which a hole is formed is prepared. Precursors including a nickel alkoxide compound are vaporized. A nickel-containing layer is formed in the hole by providing the vaporized precursors including the nickel alkoxide compound onto the substrate.

Abstract: The ?-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the ?-ketoimine ligand. A method of forming the ?-ketoimine ligand and a method of forming a thin film using the metal complex compound including ?-ketoimine ligand are provided.

Abstract: The ?-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the ?-ketoimine ligand. A method of forming the ?-ketoimine ligand and a method of forming a thin film using the metal complex compound including ?-ketoimine ligand are provided.

Abstract: An aluminum compound is represented by following Formula 1. In Formula 1, X is a functional group represented by following Formula 2 or Formula 3.

Abstract: A method of forming a pattern includes forming an underlayer on an etching target layer by a chemical vapor deposition (CVD) process, the underlayer including a silicon compound combined with a photoacid generator (PAG), forming a photoresist layer on the underlayer, irradiating extreme ultraviolet (EUV) light on the photoresist layer to form a photoresist pattern, and etching the etching target layer using the photoresist pattern as an etching mask.

Abstract: An electroplating solution includes an aqueous electrolyte solution including water soluble copper salts, sulfide ions and chloride ions, an accelerator including an organic material having sulfur (S), the accelerator accelerating copper (Cu) reduction, a suppressor including a polyether compound, the suppressor selectively suppressing the copper reduction, and a leveler including a water soluble polymer having nitrogen that is dissolved into positive ions in the aqueous electrolyte solution.

Abstract: In a method of forming a layer, a precursor composition including a metal and a ligand chelating to the metal is stabilized by contacting the precursor composition with an electron donating compound to provide a stabilized precursor composition onto a substrate. A reactant is introduced onto the substrate to bind to the metal in the stabilized precursor composition. The stabilized precursor composition is provided onto the substrate by introducing the precursor composition onto the substrate after the electron donating compound is introduced onto the substrate. The electron donating compound is continuously introduced onto the substrate during and after the precursor composition is introduced.

Abstract: The ?-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the ?-ketoimine ligand. A method of forming the ?-ketoimine ligand and a method of forming a thin film using the metal complex compound including ?-ketoimine ligand are provided.

Abstract: Disclosed are an organometallic precursor that may be used in manufacturing a semiconductor device, a thin film having the same, a metal wiring including the thin film, a method of forming a thin film and a method of manufacturing a metal wiring. An organometallic precursor including a central metal, a borohydride ligand and an amine ligand for reducing a polarity of the organometallic precursor may be provided onto a substrate, and may be thermally decomposed to form a thin film on the substrate. The organometallic precursor having a reduced polarity may be provided to a chamber with a constant flow rate, and thus stability and/or efficiency of a semiconductor manufacturing process may be improved.

Abstract: In a method of forming a layer, a precursor composition including a metal and a ligand chelating to the metal is stabilized by contacting the precursor composition with an electron donating compound to provide a stabilized precursor composition onto a substrate. A reactant is introduced onto the substrate to bind to the metal in the stabilized precursor composition. The stabilized precursor composition is provided onto the substrate by introducing the precursor composition onto the substrate after the electron donating compound is introduced onto the substrate. The electron donating compound is continuously introduced onto the substrate during and after the precursor composition is introduced.

Abstract: In a method of forming a layer, a precursor including a metal and a ligand chelating to the metal is stabilized by contacting the precursor with an electron donating compound to provide a stabilized precursor onto a substrate. A reactant is introduced onto the substrate to bind to the metal in the stabilized precursor. The precursor stabilized by the electron donating compound has an improved thermal stability and thus the precursor is not dissociated at a high temperature atmosphere, and the layer having a uniform thickness is formed on the substrate.

Abstract: In a method of forming a layer, a precursor including a metal and a ligand coordinating to the metal is stabilized by contacting the precursor with an electron donating compound to provide a stabilized precursor into a substrate. A reactant is introduced into the substrate to bind to the metal in the stabilized precursor. The precursor stabilized by the electron donating compound has an improved thermal stability and thus the precursor is not dissociated at a high temperature atmosphere, and the layer having a uniform thickness is formed on the substrate.

Abstract: Provided herein are methods of forming a metal oxide layer that include providing an organometallic compound and an oxidizing agent to the substrate to form the metal oxide layer on the substrate. The organometallic compound may have the general formula of M(NR1R2)3R3, wherein M is a metal; R1 and R2 are each independently hydrogen or alkyl; and R3 is selected from the group consisting of alkyl, cycloalkyl, heterocycloalkyl, aryl and heteroaryl.