Abstract: There is provided a method of fabrication an integrated circuit comprising providing a substrate with a bond pad formed thereover, the bond pad having a top surface for the formation of bonding connections. A passivation layer is provided over the bond pad followed by an overlying masking layer. The passivation layer is subsequently etched in accordance with the masking layer to form a patterned passivation layer with an opening that exposes a portion of the top surface of the bond pad. After etching the passivation layer, the mask layer is removed by a plasma resist strip followed by a wet solvent clean that removes etch residue from the passivation layer etch. Finally, a bond pad protective layer is grown over the surface of the bond pad. The bond pad may be composed of aluminum and the bond pad protective layer may be aluminum oxide.

Abstract: Embodiments of the invention provide a method of determining a storage lifetime of a wafer in a storage environment, the storage environment corresponding to an environment having a first value of temperature and a first value of relative humidity, the wafer having a pre-test value of a first contamination parameter, including the steps of: subjecting the wafer to a test environment for a test period, the test environment includes an environment having a second value of temperature and a second value of relative humidity; subsequently, inspecting the wafer thereby to determine a post-test value of a second contamination parameter, wherein the second value of relative humidity is greater than 30% and the second value of wafer temperature is greater than 30° C.

Abstract: There is provided a method of fabrication an integrated circuit comprising providing a substrate with a bond pad formed thereover, the bond pad having a top surface for the formation of bonding connections. A passivation layer is provided over the bond pad followed by an overlying masking layer. The passivation layer is subsequently etched in accordance with the masking layer to form a patterned passivation layer with an opening that exposes a portion of the top surface of the bond pad. After etching the passivation layer, the mask layer is removed by a plasma resist strip followed by a wet solvent clean that removes etch residue from the passivation layer etch. Finally, a bond pad protective layer is grown over the surface of the bond pad. The bond pad may be composed of aluminum and the bond pad protective layer may be aluminum oxide.

Abstract: Embodiments of the invention provide a method of determining a storage lifetime of a wafer in a storage environment, the storage environment corresponding to an environment having a first value of temperature and a first value of relative humidity, the wafer having a pre-test value of a first contamination parameter, including the steps of: subjecting the wafer to a test environment for a test period, the test environment includes an environment having a second value of temperature and a second value of relative humidity; subsequently, inspecting the wafer thereby to determine a post-test value of a second contamination parameter, wherein the second value of relative humidity is greater than 30% and the second value of wafer temperature is greater than 30° C.