Abstract: An unmanned photographing device and method thereof is provided which includes establishing a wireless connection with an external electronic device using a communication device, receiving a first signal at a first three-dimensional (3D) position from the external electronic device through the wireless connection, the first signal comprising data associated with a first image comprising a first object, determining a second 3D position based on at least part of the data and the first 3D position, controlling the unmanned photographing device to fly to or near the second 3D position, tracking a second object corresponding to the first object using a camera, and capturing a second image comprising the second object at or near the second 3D position such that the second image corresponds to the first image.

Abstract: In one example embodiment, a semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. The second conductivity-type semiconductor layer and the active layer having at least one contact hole exposing a region of the first conductivity-type semiconductor layer. The semiconductor light emitting device further includes at least one columnar structure disposed in the exposed region of the first conductivity-type semiconductor layer within the at least one contact hole. The semiconductor light emitting device further includes a first electrode disposed on the exposed region of the first conductivity-type semiconductor layer in which the at least one columnar structure is disposed, the first electrode being connected to the first conductivity-type semiconductor layer.

Abstract: A method for manufacturing a light emitting device package is provided. In the method, a growth substrate including a plurality of light emitting devices disposed on a top surface of the growth substrate is prepared. A first package substrate having a bonding pattern corresponding to a portion of the plurality of light emitting devices is prepared, and the bonding pattern is disposed on a top surface of the first package substrate. The portion of the plurality of light emitting devices and the bonding pattern are bonded by disposing the top surface of the growth substrate to face the top surface of the first package substrate. The portion of the plurality of light emitting devices is separated from the growth substrate. The portion of the plurality of light emitting devices joined to the bonding pattern is packaged.

Abstract: In acccordance with an embodiment of a disclosure, a battery pack is disclosed that includes a first battery cell of a first battery type, a second battery cell of a second battery type, a sensor enabled to measure a current and/or a voltage of the first battery cell and/or the second battery cell, a controller enabled to compare a measured current with a current threshold and/or a measured voltage with a voltage threshold, and a switching circuit enabled to connect to the controller one of the first battery cell and the second battery cell, based on a result of the comparison.

Abstract: A semiconductor light emitting device includes a conductive substrate, a light emitting laminate including a second conductivity type semiconductor layer, an active layer, and a first conductivity type semiconductor layer stacked on the conductive substrate, a first electrode layer electrically connected to the first conductivity type semiconductor layer, a second electrode layer between the conductive substrate and the second conductivity type semiconductor layer, the second electrode layer being electrically connected to the second conductivity type semiconductor layer, and a passivation layer between the active layer and the second electrode layer, the passivation layer covering at least a lateral surface of the active layer of the light emitting laminate.

Abstract: A semiconductor light emitting device (LED) includes a first light emitting cell having a first plurality of electrodes. A second light emitting cell includes a second plurality of electrodes. The first and second light emitting cells are disposed on the substrate and are physically separated from each other. A first interconnection unit electrically connects the first plurality of electrodes to the second plurality of the electrodes.

Abstract: A semiconductor light emitting device includes: a first conductive semiconductor layer including first and second areas; an active layer disposed on the second area; a second conductive semiconductor layer disposed on the active layer; first and second electrode branches disposed on the first and second conductive semiconductor layers, respectively; a first electrode pad electrically connected to the first electrode branch and disposed on the first electrode branch; and a second electrode pad electrically connected to the second electrode branch and disposed on the second electrode branch.

Abstract: A semiconductor light emitting device includes a conductive substrate, a light emitting laminate including a second conductivity type semiconductor layer, an active layer, and a first conductivity type semiconductor layer stacked on the conductive substrate, a first electrode layer electrically connected to the first conductivity type semiconductor layer, a second electrode layer between the conductive substrate and the second conductivity type semiconductor layer, the second electrode layer being electrically connected to the second conductivity type semiconductor layer, and a passivation layer between the active layer and the second electrode layer, the passivation layer covering at least a lateral surface of the active layer of the light emitting laminate.

Abstract: A method for manufacturing a light emitting device package is provided. In the method, a growth substrate including a plurality of light emitting devices disposed on a top surface of the growth substrate is prepared. A first package substrate having a bonding pattern corresponding to a portion of the plurality of light emitting devices is prepared, and the bonding pattern is disposed on a top surface of the first package substrate. The portion of the plurality of light emitting devices and the bonding pattern are bonded by disposing the top surface of the growth substrate to face the top surface of the first package substrate. The portion of the plurality of light emitting devices is separated from the growth substrate. The portion of the plurality of light emitting devices joined to the bonding pattern is packaged.

Abstract: In one example embodiment, a semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. The second conductivity-type semiconductor layer and the active layer having at least one contact hole exposing a region of the first conductivity-type semiconductor layer. The semiconductor light emitting device further includes at least one columnar structure disposed in the exposed region of the first conductivity-type semiconductor layer within the at least one contact hole. The semiconductor light emitting device further includes a first electrode disposed on the exposed region of the first conductivity-type semiconductor layer in which the at least one columnar structure is disposed, the first electrode being connected to the first conductivity-type semiconductor layer.

Abstract: There is provided a semiconductor light emitting device including a substrate having light transmission properties and including a first surface and a second surface opposed to the first surface, a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer sequentially disposed on the first surface of the substrate, a first electrode and a second electrode connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively, and a window layer disposed on the second surface of the substrate, the window layer being formed of a light transmissive material which is different from a material of the substrate and including inclined side surfaces.

Abstract: There is provided a method for manufacturing a nitride semiconductor light emitting device, including: forming a light emitting structure including first and second conductive nitride semiconductor layers on a substrate and an active layer formed therebetween; forming the first conductive nitride semiconductor layer, the active layer, and the second conductive nitride semiconductor layer in sequence; forming a first electrode connected to the first conductive nitride semiconductor layer; forming a photo-resist layer on the second conductive nitride semiconductor layer so as to expose a portion of the semiconductor layer; and removing the photo-resist layer after a reflective metal layer and a barrier metal layer serving as a second electrode structure are successively formed on the second conductive nitride semiconductor layer exposed by the photo-resist layer.

Abstract: A semiconductor light emitting device includes: a first conductive semiconductor layer including first and second areas; an active layer disposed on the second area; a second conductive semiconductor layer disposed on the active layer; first and second electrode branches disposed on the first and second conductive semiconductor layers, respectively; a first electrode pad electrically connected to the first electrode branch and disposed on the first electrode branch; and a second electrode pad electrically connected to the second electrode branch and disposed on the second electrode branch.

Abstract: A semiconductor light emitting device includes: a first conductive semiconductor layer including first and second areas; an active layer disposed on the second area; a second conductive semiconductor layer disposed on the active layer; first and second electrode branches disposed on the first and second conductive semiconductor layers, respectively; a first electrode pad electrically connected to the first electrode branch and disposed on the first electrode branch; and a second electrode pad electrically connected to the second electrode branch and disposed on the second electrode branch.

Abstract: A semiconductor light emitting device (LED) includes a first light emitting cell having a first plurality of electrodes. A second light emitting cell includes a second plurality of electrodes. The first and second light emitting cells are disposed on the substrate and are physically separated from each other. A first interconnection unit electrically connects the first plurality of electrodes to the second plurality of the electrodes.

Abstract: A semiconductor light emitting diode (LED) and a manufacturing method thereof are disclosed. The method for manufacturing a semiconductor light emitting diode (LED) includes: forming a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate with prominences and depressions; removing the substrate from the light emission structure to expose a first concavoconvex portion corresponding to the prominences and depressions; forming a protection layer on the first concavoconvex portion; removing a portion of the protection layer to expose a convex portion of the first concavoconvex portion; and forming a second concavoconvex portion on the convex portion of the first concavoconvex portion.

Abstract: Disclosed is an ink cartridge for a printer, comprising a body having an opened surface and a predetermined shape to receive ink therein; a cover coupled with the body to define a desired space; and a chamber instrument comprising a filling chamber having a space for receiving a part of the ink in the body, a discharging chamber connected with the filling chamber, an ink transferring channel for moving the ink received in the filling chamber to the discharging chamber, an air guiding hold for guiding air to an inside of the cartridge, an air suction valve for selectively passing the guided air and a pressure regulating valve for regulating an internal pressure of the body.

Abstract: There is provided a method of manufacturing a semiconductor light emitting device, the method including: forming a light emitting structure by sequentially growing an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a transparent electrode on the p-type nitride semiconductor layer through a sputtering process; and forming a nitrogen gas atmosphere in an interior of a reaction chamber in which the sputtering process is performed, prior to or during the sputtering process. In the case of the semiconductor light emitting device obtained according to embodiments of the invention, a deterioration phenomenon in electrode characteristics caused due to a nitrogen vacancy may be minimized in manufacturing a transparent electrode through a sputtering process to thereby allow for the provision of a transparent electrode having significantly improved electrical characteristics.

Abstract: There is provided a semiconductor light emitting device and a light emitting apparatus. The semiconductor light emitting device includes a light emitting diode (LED) part disposed on one region of a light transmissive substrate and including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and a Zener diode part disposed on the other region of the light transmissive substrate and including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer.

Abstract: Provided is a swivel portable terminal. The swivel portable terminal is configured to allow first and second magnet detecting units installed at one body of a main body and a swivel body at a predetermined interval therebetween to detect first and second magnets installed at the other body and corresponding to the first and second magnet detecting units. A rotation direction in which the swivel body rotates is determined according to a time difference of a change in a magnet detecting state of the first and second magnet detecting units when the swivel body rotates.