Abstract: A display device includes a panel including pixels defined by data lines and gate lines, a housing chassis covering a sidewall and an edge of the panel, a printed circuit board under the panel, the printed circuit board including circuit elements configured to generate at least one of a data signal, a gate signal, and a control signal, a chip on film connecting the printed circuit board to the panel, the chip on film between the housing chassis and the sidewall of the panel, a driver integrated circuit mounted on the chip on film and configured to respond to the control signal and drive at least one of the data signal and the gate signal applied to the data lines and the gate lines, and a connection unit attaching the chip on film to the housing chassis and dissipating heat generated by the driver integrated circuit to the housing chassis.

Abstract: Chip-on-film packages are provided. A chip-on-film package includes a film substrate having a first surface and a second surface opposite to each other, a semiconductor chip on the first surface, and a thermal deformation member adjacent to the second surface. The thermal deformation member has a construction that causes its shape to transform according to a temperature. Related devices and device assembles are also provided.

Abstract: Disclosed are a humidity sensor and a fabricating method thereof. The humidity sensor includes a substrate, an anodic aluminum oxide layer formed on the substrate and having a plurality of holes, and electrodes formed on the anodic aluminum oxide layer, in order to improve sensitivity and accuracy of the humidity sensor. Further, the fabricating method of a humidity sensor includes preparing an aluminum substrate, forming an anodic aluminum oxide layer by oxidizing the aluminum substrate, and forming electrodes on the anodic aluminum oxide layer.

Abstract: Disclosed are 3,4-dihydroquinazoline derivatives of formula (I), a process of preparing them and a pharmaceutical composition including them.

Abstract: The present invention discloses an isolation process in a semiconductor device. In the present invention, when a SPT process is used for isolation, ISO cut patterns for cutting spacers for SPT in the unit of a specific length are first formed, and ISO partition patterns defining partition regions for forming the spacers are then formed over the ISO cut patterns. Accordingly, there are advantages in that the SPT process can be simplified and costs can be reduced according to the simplified process because the isolation process is simplified.

Abstract: A method for manufacturing a semiconductor device having a buried gate is provided. A gate conductive layer is first formed in the peri region before a bit line contact is formed in the cell region, so that a fabrication process is simplified and the problem caused by a step height between the cell region and the core/peri region is not encountered.

Abstract: Disclosed are a humidity sensor and a fabricating method thereof. The humidity sensor includes a substrate, an anodic aluminum oxide layer formed on the substrate and having a plurality of holes, and electrodes formed on the anodic aluminum oxide layer, in order to improve sensitivity and accuracy of the humidity sensor. Further, the fabricating method of a humidity sensor includes preparing an aluminum substrate, forming an anodic aluminum oxide layer by oxidizing the aluminum substrate, and forming electrodes on the anodic aluminum oxide layer.

Abstract: The present invention relates to 3,4-dihydroquinazoline derivatives, a process of preparing them and a pharmaceutical composition including them. The 3,4-dihydroquinazoline derivatives of the present invention have excellent T-type calcium channel blocking effect and anti-cancer activity.

Abstract: A method of fabricating a semiconductor device includes forming an interlayer insulating pattern over a semiconductor substrate. The interlayer insulating pattern defines a plurality of storage node regions. A lining conductive film is formed over the interlayer insulating pattern including the storage node region. A capping insulating film is formed over the lining conductive film. The capping insulating film over the interlayer insulating film and the lining conductive film are selectively etched between two neighboring storage node regions to form a recess exposing the interlayer insulating pattern on the bottom of the recess and the lining conductive film on sidewalls of the recess. The capping insulating film and the lining conductive film is shaped to be planar so that the lining conductive layer is electrically separated from each other to form a respective lower storage electrode. A supporting pattern is formed to fill the recess.

Abstract: A method of fabricating a semiconductor device includes forming an interlayer insulating pattern over a semiconductor substrate. The interlayer insulating pattern defines a plurality of storage node regions. A lining conductive film is formed over the interlayer insulating pattern including the storage node region. A capping insulating film is formed over the lining conductive film. The capping insulating film over the interlayer insulating film and the lining conductive film are selectively etched between two neighboring storage node regions to form a recess exposing the interlayer insulating pattern on the bottom of the recess and the lining conductive film on sidewalls of the recess. The capping insulating film and the lining conductive film is shaped to be planar so that the lining conductive layer is electrically separated from each other to form a respective lower storage electrode. A supporting pattern is formed to fill the recess.

Abstract: The present invention relates to a polyethoxylated retinamide derivative represented by formula (I), which is useful as an agent for inhibiting skin aging; in R represents hydrogen or C1-6 lower alkyl and n denotes the number of 2 to 100, and the process for preparing the compound of formula (I) as an effective component.