Abstract: A biosensor comprising a substrate, a gate electrode provided on the substrate, an insulating layer provided on the gate electrode, a source electrode and a drain electrode, provided on the insulating layer, respectively, an n-type channel provided between the source electrode and the drain electrode, and a quantum dot layer provided on the n-type channel and provided so as to have electronic transition energy capable of resonating with vibration energy of a target biological material.

Abstract: Invention biosensor that can be easily manufactured by a printing technique, can be mass-produced, and can measure a large amount of detection factors individually/continuously.

Abstract: A biosensor comprising a substrate, a gate electrode provided on the substrate, an insulating layer provided on the gate electrode, a source electrode and a drain electrode, provided on the insulating layer, respectively, an n-type channel provided between the source electrode and the drain electrode, and a quantum dot layer provided on the n-type channel and provided so as to have electronic transition energy capable of resonating with vibration energy of a target biological material.

Abstract: invention biosensor that can be easily manufactured by a printing technique, can be mass-produced, and can measure a large amount of detection factors individually/continuously.

Abstract: A vertical transistor includes a drain electrode disposed on a first region of a substrate, a drift layer disposed on a second region of the substrate spaced apart from the first region, and P-type gallium nitride current barrier layers disposed on the drift layer and comprising a current aperture disposed between current barrier layers. A channel layer is disposed on the drift layer and the current barrier layers. A semiconductor layer is disposed on the channel layer and configured to induce formation of a two-dimension electron gas layer adjacent to a top surface thereof. Metal contact plugs are disposed in the channel layer and contact the current barrier layers. A source electrode is disposed on the contact plugs and the channel layer. A gate insulation layer and a gate electrode are sequentially disposed on a top surface of the semiconductor layer opposite to the channel layer.