Abstract: A memory system may include: a controller suitable for: generating a first clock and first pattern data having a first phase difference, in a write calibration mode, calibrating, the first phase difference depending on a second information, in a read calibration mode, detecting, a first and second value of the first and second pattern data according to the first and second clock, generating, a first information according to comparing of the first and second values, receiving by calibrating, a second phase difference generated by a memory device depending on the first information; and the memory device suitable for: generating the second clock and the second pattern data having the second phase difference, in the write calibration mode, detecting, a first and second value of the first and second pattern data according to the first and second clock, generating, the second information according to comparing of the first and second values.

Abstract: A memory system may include: a controller suitable for: generating a first clock and first pattern data having a first phase difference, in a write calibration mode, calibrating, the first phase difference depending on a second information, in a read calibration mode, detecting, a first and second value of the first and second pattern data according to the first and second clock, generating, a first information according to comparing of the first and second values, receiving by calibrating, a second phase difference generated by a memory device depending on the first information; and the memory device suitable for: generating the second clock and the second pattern data having the second phase difference, in the write calibration mode, detecting, a first and second value of the first and second pattern data according to the first and second clock, generating, the second information according to comparing of the first and second values.

Abstract: A memory system may include: a controller suitable for: generating a first clock and first pattern data having a first phase difference, in a write calibration mode, calibrating, the first phase difference depending on a second information, in a read calibration mode, detecting, a first and second value of the first and second pattern data according to the first and second clock, generating, a first information according to comparing of the first and second values, receiving by calibrating, a second phase difference generated by a memory device depending on the first information; and the memory device suitable for: generating the second clock and the second pattern data having the second phase difference, in the write calibration mode, detecting, a first and second value of the first and second pattern data according to the first and second clock, generating, the second information according to comparing of the first and second values.

Abstract: There are provided a controller of a semiconductor memory device, which stores data for debug processing, and an operating method of the controller. A controller for controlling a semiconductor memory device includes an event occurrence detection unit configured to detect whether an event occurs, an event information generation unit configured to generate event information in response to the detecting result from the event occurrence detection unit, and a command generation unit configured to generate a command for storing the event information in the semiconductor memory device.

Abstract: A controller includes a command generation unit suitable for generating a first read command for at least one page selected from said plurality of pages, an error correction block suitable for performing a first error correction operation to one or more code words stored in said at least one selected page in response to the first read command, and a command mirroring unit suitable for generating a mirrored command by mirroring the first read command.

Abstract: A memory system may include: a controller suitable for: generating a first clock and first pattern data having a first phase difference, in a write calibration mode, calibrating, the first phase difference depending on a second information, in a read calibration mode, detecting, a first and second value of the first and second pattern data according to the first and second clock, generating, a first information according to comparing of the first and second values, receiving by calibrating, a second phase difference generated by a memory device depending on the first information; and the memory device suitable for: generating the second clock and the second pattern data having the second phase difference, in the write calibration mode, detecting, a first and second value of the first and second pattern data according to the first and second clock, generating, the second information according to comparing of the first and second values.

Abstract: A memory system includes a memory device comprising a plurality of memory blocks each memory block having N word line groups, N being a natural number equal to or more than 2; and a controller suitable for: selecting bad memory blocks among the memory blocks; arranging normal word line groups of the selected bad memory blocks into one or more memory-block-word-line groups each including non-conflicting N normal word line groups; and managing each of the memory-block-word-line groups as a reused memory block, the controller manages a reused block mapping table including a plurality of entries respectively corresponding to the memory-block-word-line groups, the reused block mapping table includes a plurality of logical addresses respectively corresponding to the entries, and each of the entries includes a plurality of physical address values respectively corresponding to the selected bad memory blocks having the normal word line groups included in the corresponding memory-block-word-line group.

Abstract: There are provided a controller coupled to a semiconductor memory device and an operating method thereof. A controller having improved operation speed includes a command generation unit for generating commands to be performed by a semiconductor memory device, a command queue for storing the commands and providing at least one command among the stored commands to the semiconductor memory device, and a command removal unit for, if the semiconductor memory device fails in the performance of the at least one command output from the main command queue, removing the at least one command and related commands of the at least one command from the command queue.

Abstract: There are provided a controller of a semiconductor memory device, which stores data for debug processing, and an operating method of the controller. A controller for controlling a semiconductor memory device includes an event occurrence detection unit configured to detect whether an event occurs, an event information generation unit configured to generate event information in response to the detecting result from the event occurrence detection unit, and a command generation unit configured to generate a command for storing the event information in the semiconductor memory device.

Abstract: There are provided a controller coupled to a semiconductor memory device and an operating method thereof. A controller having improved operation speed includes a command generation unit for generating commands to be performed by a semiconductor memory device, a command queue for storing the commands and providing at least one command among the stored commands to the semiconductor memory device, and a command removal unit for, if the semiconductor memory device fails in the performance of the at least one command output from the main command queue, removing the at least one command and related commands of the at least one command from the command queue.

Abstract: A method of operating a controller includes, determining whether an address corresponding to a program operation indicates a lower page or an upper page; waiting for a first waiting time for the program operation to the lower page when the address indicates the lower page; waiting for a second waiting time for the program operation to the upper page when the address indicates the upper page, wherein the second waiting time is longer than the first waiting time; and performing a status read operation on the semiconductor memory device after one of the first waiting time or the second waiting time.

Abstract: A controller includes a command generation unit suitable for generating a first read command for at least one page selected from said plurality of pages, an error correction block suitable for performing a first error correction operation to one or more code words stored in said at least one selected page in response to the first read command, and a command mirroring unit suitable for generating a mirrored command by mirroring the first read command.

Abstract: An operating method for controlling a semiconductor memory device according to an embodiment may include storing read commands in a command queue managed on first-in first-out basis; providing one of the read commands to the semiconductor memory device; determining whether the provided read command passes or fails based on read data, which is provided from the semiconductor memory device in response to the provided read command; and aborting remaining read commands in the command queue when the provided read command passes.

Abstract: A memory system includes a semiconductor memory device including a plurality of ways suitable for storing normal data and reading stored data, and a system way suitable for storing system data, and a controller suitable for controlling the semiconductor memory device to perform overall operations of the plurality of ways and an update operation of the system data of the system way.

Abstract: An operating method for controlling a semiconductor memory device according to an embodiment may include storing read commands in a command queue managed on first-in first-out basis; providing one of the read commands to the semiconductor memory device; determining whether the provided read command passes or fails based on read data, which is provided from the semiconductor memory device in response to the provided read command; and aborting remaining read commands in the command queue when the provided read command passes.

Abstract: A method of operating a controller includes, determining whether an address corresponding to a program operation indicates a lower page or an upper page; waiting for a first waiting time for the program operation to the lower page when the address indicates the lower page; waiting for a second waiting time for the program operation to the upper page when the address indicates the upper page, wherein the second waiting time is longer than the first waiting time; and performing a status read operation on the semiconductor memory device after one of the first waiting time or the second waiting time.