Abstract: In a photoresist composition and a method of forming a pattern using the same, the photoresist composition includes about 0.1 to about 0.5 percent by weight of a photoacid generator including a positively charged sulfonium ion and a negatively charged sulfonate ion having a hydrophilic carboxylic group, about 4 to about 10 percent by weight of a resin, and a solvent.

Abstract: A photoresist composition includes about 4% to about 10% by weight of a photoresist resin, about 0.1% to about 0.5% by weight of a photoacid generator having a sulfonium-salt cationic group and a sulfonium-salt anionic group containing a carboxyl group as a hydrophilic site and a remainder of a solvent. The photoresist composition may form a photoresist pattern having a uniform profile.

Abstract: In a photoresist composition and a method of forming a pattern using the same, the photoresist composition includes about 0.1 to about 0.5 percent by weight of a photoacid generator including a positively charged sulfonium ion and a negatively charged sulfonate ion having a hydrophilic carboxylic group, about 4 to about 10 percent by weight of a resin, and a solvent.

Abstract: A photoresist is formed on an object layer of a semiconductor device by coating the object layer with a photoresist composition including about 7 percent to about 14 percent by weight of an inclusion complex having a ?-cyclodextrin derivative as a host and an adamantane derivative as a guest, about 0.1 percent to about 0.5 percent by weight of a photoacid generator, and a remainder of an organic solvent.

Abstract: A photoresist film is formed on an object layer of a semiconductor device by coating the object layer with a photoresist composition including about 7 percent to about 14 percent by weight of a cyclodextrin derivative, about 0.1 percent to about 0.5 percent by weight of a photoacid generator, and a remainder of an organic solvent. The cyclodextrin derivative includes a ?-cyclodextrin moiety and at least one alkyl carbonate group.

Abstract: A donor substrate for a flat panel display includes a base film, a light-to-heat conversion layer on the base film, a first buffer layer on the light-to-heat conversion layer, the first buffer layer including an emission host material, a transfer layer on the first buffer layer, and a second buffer layer on the transfer layer, the second buffer layer including an emission host material identical to the emission host material of the first buffer layer.

Abstract: A manufacturing method using an additional heat-treatment process for a donor film with improved surface roughness. The improved donor film, used in a laser induced thermal imaging method, is capable of enhancing the lifetime of products and reducing the defect rates thereof. A manufacturing method for a donor film according to the invention, includes: providing a donor film comprising a base film, a light-to-heat conversion layer and an organic film; heating the donor film to provide a heat-treated donor film; and cooling the heat-treated donor film. The surface roughness of a donor film can be improved, and the non-uniform distribution of a laser on a region subjected to the LITI process can be minimized to prevent the over- or under-transfer of an transferred organic film, etc., and the non-uniform adhesion of the transferred organic film with an acceptor substrate.

Abstract: A laser irradiation device and a method of fabricating an organic light emitting display device (OLED) using the same are disclosed. The laser irradiation device includes: a laser source generating a laser beam; a mask disposed below the laser source and patterning the beam and a projection lens disposed below the mask and determining magnification of the laser beam through the mask, wherein the laser beam penetrating the mask has different doses in at least two regions. Thus, the laser irradiation device can maximize emission efficiency and enhance the quality of a transfer layer pattern when an organic layer of the OLED is formed using the laser irradiation device.

Abstract: In one aspect, a photoresist composition includes a cross-linking agent, a photosensitive material, an organic solvent, and a compound having a chemical structure represented by formulae (1) or (2) herein. The cross-linking agent includes at least one epoxy group and/or at least two hydroxyl groups.