Abstract: A dry cleaning apparatus includes a chamber, a substrate support supporting a substrate within the chamber, a shower head arranged in an upper portion of the chamber to supply a dry cleaning gas toward the substrate, the shower head including an optical window transmitting a laser light therethrough toward the substrate support, a plasma generator generating plasma from the dry cleaning gas, and a laser irradiator irradiating the laser light on the substrate through the optical window and the plasma to heat the substrate.

Abstract: A spot heater and a device for cleaning a wafer using the same are provided. The wafer cleaning device includes a heater chuck on which a wafer is mounted, the heater chuck configured to heat a bottom surface of the wafer; a chemical liquid nozzle configured to spray a chemical liquid on a top surface of the wafer for etching; and a spot heater configured to heat a spot of the top surface of the wafer.

Abstract: A liquid chemical recycle system includes a buffer tank receiving a first liquid chemical from outside; a vacuum tank having a vacuum pump connected thereto and receiving the first liquid chemical from the buffer tank using the vacuum pump; and a recycle tank receiving the first liquid chemical from the vacuum tank and providing a second liquid chemical, which is a recycled first liquid chemical, to the outside, wherein the buffer tank includes a first injection portion, to which the first liquid chemical is provided, and a first supply portion, which provides the first liquid chemical to the vacuum tank, and a bottom of the buffer tank is downwardly inclined toward the first supply portion to prevent a material contained in the first liquid chemical from being accumulated in the buffer tank.

Abstract: A cleaning composition, a cleaning apparatus, and a method of fabricating a semiconductor device, the cleaning composition including a surfactant; deionized water; and an organic compound, wherein the surfactant is included in the cleaning composition in a concentration of about 0.28M to about 0.39 M or a mole fraction of about 0.01 to about 0.017, and wherein the organic compound is included in the cleaning composition in a concentration of about 7.1 M to about 7.5 M or a mole fraction of about 0.27 to about 0.035.

Abstract: A chemical liquid supply apparatus includes a nozzle unit including a nozzle arm and an injection nozzle mounted in an end of the nozzle arm, a chemical liquid supply unit including a first chemical liquid tank accommodating a first chemical liquid and a second chemical liquid tank accommodating a second chemical liquid, and supplying the first chemical liquid and the second chemical liquid to the nozzle unit, and a mixer unit provided in the nozzle unit and discharging a process fluid by mixing the first chemical liquid and the second chemical liquid, wherein the mixer unit includes an in-line mixer mixing the first chemical liquid and the second chemical liquid that are continually injected from the chemical liquid supply unit, and a mixer pipe extending from the in-line mixer to the injection nozzle.

Abstract: A substrate treating apparatus and a method of treating a substrate, the apparatus including a substrate treater that treats a substrate using a chemical solution, the chemical solution including a phosphoric acid aqueous solution and a silicon compound; and a chemical solution supplier that supplies the chemical solution to the substrate treating unit, wherein the chemical solution supplier includes a concentration measurer that measures concentrations of the chemical solutions, the concentration measurer including a first concentration measurer that measures a water concentration of the chemical solution; and a second concentration measurer that measures a silicon concentration of the chemical solution.

Abstract: A process chamber and a substrate processing apparatus including the same are disclosed. The process chamber includes a first housing and a second housing on the first housing. The first housing includes a first outer wall, a first partition wall facing the first outer wall, and a first side wall connecting the first outer wall and the first partition wall. The second housing includes a second outer wall, a second partition wall between the second outer wall and the first partition wall, and a second side wall connecting the second outer wall and the second partition wall. Each of the first and second outer walls has a thickness greater than a thickness of the first partition wall and a thickness of the second partition wall.

Abstract: Disclosed are a substrate drying apparatus, a facility of manufacturing a semiconductor device, and a method of drying a substrate. The substrate drying apparatus includes a chamber that is configured to dry a substrate at a first temperature, a first reservoir that is configured to store a first supercritical fluid at a second temperature that is less than the first temperature, a second reservoir that is configured to store a second supercritical fluid at a third temperature that is greater than the first temperature, and a supply unit connected between the chamber and the first reservoir and/or second reservoir. The supply unit is configured to supply the chamber with the first supercritical fluid and second supercritical fluid.

Abstract: A substrate processing apparatus includes a vessel providing a processing space for processing a substrate, a substrate support supporting the substrate loaded in the processing space, and a barrier between a side wall of the vessel and the substrate support and surrounding an edge of the substrate supported by the substrate support.

Abstract: A spot heater and a device for cleaning a wafer using the same are provided. The wafer cleaning device includes a heater chuck on which a wafer is mounted, the heater chuck configured to heat a bottom surface of the wafer; a chemical liquid nozzle configured to spray a chemical liquid on a top surface of the wafer for etching; and a spot heater configured to heat a spot of the top surface of the wafer.

Abstract: A spot heater and a device for cleaning a wafer using the same are provided. The wafer cleaning device includes a heater chuck on which a wafer is mounted, the heater chuck configured to heat a bottom surface of the wafer; a chemical liquid nozzle configured to spray a chemical liquid on a top surface of the wafer for etching; and a spot heater configured to heat a spot of the top surface of the wafer.

Abstract: A substrate treating apparatus and a method of treating a substrate, the apparatus including a substrate treater that treats a substrate using a chemical solution, the chemical solution including a phosphoric acid aqueous solution and a silicon compound; and a chemical solution supplier that supplies the chemical solution to the substrate treating unit, wherein the chemical solution supplier includes a concentration measurer that measures concentrations of the chemical solutions, the concentration measurer including a first concentration measurer that measures a water concentration of the chemical solution; and a second concentration measurer that measures a silicon concentration of the chemical solution.

Abstract: A substrate treating apparatus and a method of treating a substrate, the apparatus including a substrate treater that treats a substrate using a chemical solution, the chemical solution including a phosphoric acid aqueous solution and a silicon compound; and a chemical solution supplier that supplies the chemical solution to the substrate treating unit, wherein the chemical solution supplier includes a concentration measurer that measures concentrations of the chemical solutions, the concentration measurer including a first concentration measurer that measures a water concentration of the chemical solution; and a second concentration measurer that measures a silicon concentration of the chemical solution.

Abstract: A substrate treating apparatus and a method of treating a substrate, the apparatus including a substrate treater that treats a substrate using a chemical solution, the chemical solution including a phosphoric acid aqueous solution and a silicon compound; and a chemical solution supplier that supplies the chemical solution to the substrate treating unit, wherein the chemical solution supplier includes a concentration measurer that measures concentrations of the chemical solutions, the concentration measurer including a first concentration measurer that measures a water concentration of the chemical solution; and a second concentration measurer that measures a silicon concentration of the chemical solution.

Abstract: A chemical liquid supply apparatus includes a nozzle unit including a nozzle arm and an injection nozzle mounted in an end of the nozzle arm, a chemical liquid supply unit including a first chemical liquid tank accommodating a first chemical liquid and a second chemical liquid tank accommodating a second chemical liquid, and supplying the first chemical liquid and the second chemical liquid to the nozzle unit, and a mixer unit provided in the nozzle unit and discharging a process fluid by mixing the first chemical liquid and the second chemical liquid, wherein the mixer unit includes an in-line mixer mixing the first chemical liquid and the second chemical liquid that are continually injected from the chemical liquid supply unit, and a mixer pipe extending from the in-line mixer to the injection nozzle.

Abstract: A spot heater and a device for cleaning a wafer using the same are provided. The wafer cleaning device includes a heater chuck on which a wafer is mounted, the heater chuck configured to heat a bottom surface of the wafer; a chemical liquid nozzle configured to spray a chemical liquid on a top surface of the wafer for etching; and a spot heater configured to heat a spot of the top surface of the wafer.

Abstract: The inventive concept provides methods of manufacturing three-dimensional semiconductor devices. In some embodiments, the methods include forming a stack structure including sacrificial layers and insulation layers, forming a trench penetrating the stack structure, forming a hydrophobic passivation element on the surfaces of the insulation layers that were exposed by the trench and selectively removing the sacrificial layers.

Abstract: A substrate treating apparatus including a support member configured to support a substrate container configured to surround an upper portion of the support member, a nozzle member including at least one nozzle, which is configured to spray a treating solution onto the substrate disposed on the support member, and a treating solution supply unit connected to the nozzle and configured to supply the treating solution to the nozzle through a main tube may be provided.

Abstract: In a supercritical fluid method a supercritical fluid is supplied into a process chamber. The supercritical fluid is discharged from the process chamber as a supercritical fluid process proceeds. A concentration of a target material included in the supercritical fluid discharged from the process chamber is detected during the supercritical fluid process. An end point of the supercritical fluid process may be determined based on a detected concentration of the target material.

Abstract: In a supercritical fluid method a supercritical fluid is supplied into a process chamber. The supercritical fluid is discharged from the process chamber as a supercritical fluid process proceeds. A concentration of a target material included in the supercritical fluid discharged from the process chamber is detected during the supercritical fluid process. An end point of the supercritical fluid process may be determined based on a detected concentration of the target material.