Abstract: A method of decommissioning a nuclear facility, including: exposing the plurality of upper penetration holes by removing the plurality of sandboxes; enlarging an upper space of the cavity by cutting an upper portion of the biological shield concrete that is disposed between the plurality of upper penetration holes and between the plurality of upper penetration holes and the cavity; and separating the nuclear reactor pressure vessel from the biological shield concrete.

Abstract: A method of decommissioning a nuclear facility including a plurality of sandboxes that cover a plurality of upper penetration holes, includes: exposing the plurality of pipes through the plurality of upper penetration holes by removing the plurality of sandboxes; and cutting the plurality of pipes through the plurality of upper penetration holes.

Abstract: The present invention relates to a plasma furnace which can efficiently treat various types of waste in large amounts. The plasma furnace comprises a melting chamber 101 for accommodating a melt, an upper surface forming the upper portion of the melting chamber 101 with a horizontal upper surface 111 and an inclined upper surface 112 having a slope with respect to the horizontal upper surface 111, a melt discharge portion 130 formed through a bottom surface of the melting chamber for discharging molten material therethrough, and an input apparatus 120 having a slope for inputting waste into the melting chamber 101, and the mixed type plasma torch 191, 192 provided on the inclined upper surface 112 with a slope for generating melting heat in the melting chamber 101.

Abstract: A metal oxide barrier and a connecting method for solving the problems in which sectors of an existing cold crucible are connected by means of a mica plate and the mica plate is damaged due to arcing and the like and in which the sectors are strongly connected by means of the mica plate and thus are difficult to replace and maintain. A cold crucible, comprising a metal oxide barrier, according to the present invention can prevent arcing, enables reduction of damage on the edge part of a water cooling sector due to a molten material and thus enhances durability. Moreover, the metal oxide barrier can easily be replaced compared to an existing mica plate and thus enables easy maintenance and repair.

Abstract: A device for forming a molten solidified body by receiving a molten material discharged from a vitrification device or the like on a lower mold, and a method for forming a molten solidified body and, particularly, to a mold supporting device for forming a uniform molten solidified body such that a height deviation on a mold of a dropping molten material is reduced by providing movement to the mold, and a method for forming an uniform molten solidified body. The mold supporting device and the method for forming a uniform molten solidified body to prevent the formation of a high columnar shape at a specific position by the molten effluent not being uniformly contained in the mold due to the high viscosity thereof, thereby forming a uniform solidified body.

Abstract: The present invention relates to a plasma furnace which can efficiently treat various types of waste in large amounts. The plasma furnace comprises a melting chamber 101 for accommodating a melt, an upper surface forming the upper portion of the melting chamber 101 with a horizontal upper surface 111 and an inclined upper surface 112 having a slope with respect to the horizontal upper surface 111, a melt discharge portion 130 formed through a bottom surface of the melting chamber for discharging molten material therethrough, and an input apparatus 120 having a slope for inputting waste into the melting chamber 101, and the mixed type plasma torch 191, 192 provided on the inclined upper surface 112 with a slope for generating melting heat in the melting chamber 101.

Abstract: Disclosed is a plasma torch with a structure capable of performing reversed polarity/straight polarity operation, wherein the plasma torch is coupled to a melter and melts a waste material such as radioactive waste or industrial waste by generating and sustaining a plasma arc between electrodes, the plasma torch including: a rear electrode provided inside a torch pipe and electrically connected to become one of an anode and a cathode; and a front electrode provided at a front end of the torch pipe at a position adjacent to a front end of the rear electrode and electrically connected to become a remaining one of the anode and the cathode, wherein electrical connections of the rear and front electrodes are switchable with each other so that the plasma torch operates as a reversed polarity plasma torch or a straight polarity plasma torch.

Abstract: A method of manufacturing a thin-film transistor substrate includes: applying a composition on a substrate to form a thin-film on the substrate, heating the thin-film, and patterning the thin-film to form an oxide semiconductor pattern. The composition includes a metal nitrate and water. The potential of hydrogen (pH) of the composition is about 1 to about 4.

Abstract: Provided is a solution composition for manufacturing a metal oxide semiconductor including aluminum salts, metal acetylacetonate and a solvent. In addition, provided is a method for manufacturing a metal oxide semiconductor, including: manufacturing of a metal oxide semiconductor by performing heat treatment after coating a solution composition for manufacturing the metal oxide semiconductor above a substrate. In addition, provided is a thin film transistor, including: a gate substrate; a metal oxide semiconductor manufactured to be overlapped with the gate substrate; a source electrode electrically connected to the metal oxide semiconductor; and a drain electrode that is electrically connected to the metal oxide semiconductor and faces the source electrode.

Abstract: Provided is a solution composition for manufacturing a metal oxide semiconductor including aluminum salts, metal acetylacetonate and a solvent. In addition, provided is a method for manufacturing a metal oxide semiconductor, including: manufacturing of a metal oxide semiconductor by performing heat treatment after coating a solution composition for manufacturing the metal oxide semiconductor above a substrate. In addition, provided is a thin film transistor, including: a gate substrate; a metal oxide semiconductor manufactured to be overlapped with the gate substrate; a source electrode electrically connected to the metal oxide semiconductor; and a drain electrode that is electrically connected to the metal oxide semiconductor and faces the source electrode.

Abstract: A double/multi window processing apparatus for a TV system is disclosed. The apparatus has a first luminance/chrominance separation unit for separating a luminance signal Ym and chrominance signal Cm from the combined image signals of the main image outputted from the intermediate frequency processing unit. A second luminance/chrominance separation unit separates the luminance and chrominance components from the combined image signals CVBS1 and CVBS2 of the main image and a sub-image outputted from the intermediate frequency processing unit and coincides the same. The second luminance/chrominance separation unit combines the synchronous-coincided luminance and chrominance signals and generates double window luminance Yp and chrominance Cp signals. A luminance/chrominance switching unit switches the luminance Yp and chrominance Cp signals of the first and second luminance/chrominance separation units and outputs one luminance Y and chrominance signal.

Abstract: A double window processing device for a television system capable of providing a high picture quality of double window pictures displayed on a screen by matching the synchronization of main-channel and sub-channel pictures.