Abstract: This invention relates to a method for producing chlorine in a high yield through a hydrogen chloride oxidation reaction and more specifically, this invention is characterized in that chlorine is produced in a high yield by subjecting hydrogen chloride to an oxidation reaction in a mixed gas containing carbon oxide.

Abstract: A signal processing apparatus may comprise: a pixel array where a plurality of pixels for storing data values are arranged; and a noise removing unit suitable for reflecting a data value of an adjacent pixel that is adjacent to a selected pixel, and a gain value depending on a data value of the selected pixel, on the data value of the selected pixel, and outputting the reflected data value of the selected pixel.

Abstract: A signal processing apparatus may comprise: a pixel array where a plurality of pixels for storing data values are arranged; and a noise removing unit suitable for reflecting a data value of an adjacent pixel that is adjacent to a selected pixel, and a gain value depending on a data value of the selected pixel, on the data value of the selected pixel, and outputting the reflected data value of the selected pixel.

Abstract: An image sensor in accordance with an embodiment of the present invention includes a pixel array configured to include a plurality of pixels corresponding to a plurality of rows and a plurality of columns that include one or more first column groups and one or more second column groups and are disposed in a direction crossing the plurality of rows and a data sampling unit configured to sample pixel data of a first column group of a first row and to sample pixel data of a second column group of a second row, wherein the first column group and the second column group are alternatively arranged.

Abstract: An image sensor in accordance with an embodiment of the present invention includes a pixel array configured to include a plurality of pixels corresponding to a plurality of rows and a plurality of columns that include one or more first column groups and one or more second column groups and are disposed in a direction crossing the plurality of rows and a data sampling unit configured to sample pixel data of a first column group of a first row and to sample pixel data of a second column group of a second row, wherein the first column group and the second column group are alternatively arranged.

Abstract: Disclosed is a port for a vertical wall, a multi-filter used therein, and a port support frame. In the port a cover is installed in a port body having an interior space. A plurality of body filter holes penetrate the port body. Soil in which plants are set is filled in the interior space. A plurality of vegetation holes through which the plants set in the soil are formed in the cover, and cover filter holes are formed between the vegetation holes at locations corresponding to the body filter holes. Multi-filters penetrate the body filter holes, the cover filter holes, and the soil. A support tubular body forms an outer appearance of the multi-filter, and a filtering case is installed in the support tubular body.

Abstract: A device and method for preventing an integrated circuit from malfunctioning due to a surge voltage are provided. The device which is interposed between a node and a ground in the integrated circuit includes: a first material which is conductive; and a second material which is insulative, wherein a surface of the second material contacts a surface of the first material.

Abstract: A gate is formed on a device formation region of a semiconductor substrate, and source and drain regions are formed in the device formation region of the semiconductor substrate adjacent respective sides of the gate. The gate is formed to include a gate dielectric layer, a gate conductive layer and sidewall spacers located at respective sidewalls of the gate conductive layer. An etch stop layer is formed over the source region, the drain region and the sidewall spacers of the gate to obtain an intermediate structure, and a planarized first interlayer insulating film is formed over a surface of the intermediate structure. The first insulating layer is dry etched until the etch stop layer over the source region, the drain region and the sidewall spacers is exposed to form self-aligned contact holes in the first interlayer insulating over the source region and the drain region, respectively.

Abstract: A device and method for preventing an integrated circuit from malfunctioning due to a surge voltage are provided. The device which is interposed between a node and a ground in the integrated circuit includes: a first material which is conductive; and a second material which is insulative, wherein a surface of the second material contacts a surface of the first material.

Abstract: A signal processing circuit outputs a digital word responsive to incident light, and includes an analog integrated circuit having a first input terminal receiving a first analog signal during a first active period of a first switching signal and a second input terminal receiving a time varying reference signal; an inverter circuit inverting and amplifying an output of the analog integrated circuit responsive to an activated enable signal; and an output circuit generating the digital word. During a second active period of the first switching signal, the first input terminal is coupled to a data line for receiving a second analog signal corresponding to image charges of an image input element. The enable signal is deactivated between end points of the first and second active periods of the first switching signal.

Abstract: A gate is formed on a device formation region of a semiconductor substrate, and source and drain regions are formed in the device formation region of the semiconductor substrate adjacent respective sides of the gate. The gate is formed to include a gate dielectric layer, a gate conductive layer and sidewall spacers located at respective sidewalls of the gate conductive layer. An etch stop layer is formed over the source region, the drain region and the sidewall spacers of the gate to obtain an intermediate structure, and a planarized first interlayer insulating film is formed over a surface of the intermediate structure. The first insulating layer is dry etched until the etch stop layer over the source region, the drain region and the sidewall spacers is exposed to form self-aligned contact holes in the first interlayer insulating over the source region and the drain region, respectively.

Abstract: A semiconductor wafer cleaning apparatus and method uses only one inner bath for chemical solution and de-ionized water cleaning, and includes a marangoni dryer for cleaning and drying semiconductor wafers. The apparatus includes a loading unit loaded with a cassette holding wafers; a moving mechanism for extracting the wafers from the cassette and moving the wafers into a loader; an inner bath for cleaning the wafers with a chemical solution or de-ionized water; a marangoni dryer including a hood, for moving the wafers from the loader into the bath, to be sealed to the bath; and a knife for supporting the wafers loaded into the bath at a lower portion thereof and moving the wafers up and down. Since the marangoni dryer is adhered to the bath during drying, the wafers are not affected by laminar flow or exhaustion and water marks do not occur thereon.

Abstract: A signal processing circuit outputs a digital word responsive to incident light, and includes an analog integrated circuit having a first input terminal receiving a first analog signal during a first active period of a first switching signal and a second input terminal receiving a time varying reference signal; an inverter circuit inverting and amplifying an output of the analog integrated circuit responsive to an activated enable signal; and an output circuit generating the digital word. During a second active period of the first switching signal, the first input terminal is coupled to a data line for receiving a second analog signal corresponding to image charges of an image input element. The enable signal is deactivated between end points of the first and second active periods of the first switching signal.

Abstract: A semiconductor wafer cleaning apparatus and method uses only one inner bath for chemical solution and de-ionized water cleaning, and includes a marangoni dryer for cleaning and drying semiconductor wafers. The apparatus includes a loading unit loaded with a cassette holding wafers; a moving mechanism for extracting the wafers from the cassette and moving the wafers into a loader; an inner bath for cleaning the wafers with a chemical solution or de-ionized water; a marangoni dryer including a hood, for moving the wafers from the loader into the bath, to be sealed to the bath; and a knife for supporting the wafers loaded into the bath at a lower portion thereof and moving the wafers up and down. Since the marangoni dryer is adhered to the bath during drying, the wafers are not affected by laminar flow or exhaustion and water marks do not occur thereon.

Abstract: There is provided a wet-etching facility for manufacturing semiconductor devices, wherein the etching process is performed for a wafer with its used surface facing downward so that the by-products from the etching process are completely removed from the etching groove of the wafer by gravity, and the impurities on the back side of the wafer are sank down, and are not touched to the used surface of the other wafer thereby producing good quality of wafers.

Abstract: A circulation system for supplying one or more chemicals, or mixtures thereof, includes a chemical tank containing the chemical. A chemical supply line is connected at one end to the chemical tank, through which the chemical from the chemical tank is supplied to one of a processing section, for performing a specific semiconductor device fabrication process, and a bypass section, for collecting the chemical while the processing section is idle. A supply nozzle, connected to another end of the chemical supply line, is movable between the processing section and the bypass section, such that the supply nozzle is selectively oriented above one of the processing section and the bypass section. A primary chemical re-circulation line connects the processing section and the chemical tank, and a chemical bypass line connects the bypass section and a portion of the primary chemical re-circulation line.

Abstract: Aqueous cleaning compositions comprise from about 0.01 to about 10 weight percent of hydrogen fluoride; from about 1 to about 10 weight percent of hydrogen peroxide; and from about 0.01 to about 30 weight percent of isopropyl alcohol. Methods of manufacturing microelectronic devices comprise providing electrodes on insulation films on microelectronic substrates; etching the insulation films using the electrodes as etching masks to form an exposed surfaces on the electrodes; cleaning the exposed surfaces with aqueous cleaning compositions comprising from about 0.01 to about 10 weight percent of hydrogen fluoride; from about 1 to about 10 weight percent of hydrogen peroxide; and from about 0.01 to about 30 weight percent of isopropyl alcohol; and forming dielectric films on the exposed surfaces of the electrodes. The cleaning step and the etching step are carried out simultaneously.

Abstract: A wet station apparatus used for cleaning and wet etching a semiconductor wafer includes a chemical container for holding a chemical solution, a temperature measuring device for measuring a temperature of the chemical solution, a temperature control unit for comparing the temperature measured by the temperature measuring device with a predetermined reference temperature value, and outputting the result as a control signal, a quartz heater for heating the chemical solution, a power supply controller for receiving the control signal and adjusting the power supplied to the quartz heater, and a power switch connected to the power supply controller, for receiving a heating initiation signal and switching power to the quartz heater, wherein a heater monitoring system is further provided for monitoring the operating states of the quartz heater and the power supply controller and notifying an operator of any problems.

Abstract: A wet station apparatus used for cleaning and wet etching a semiconductor wafer includes a chemical container for holding a chemical solution, a temperature measuring device for measuring a temperature of the chemical solution, a temperature control unit for comparing the temperature measured by the temperature measuring device with a predetermined reference temperature value, and outputting the result as a control signal, a quartz heater for heating the chemical solution, a power supply controller for receiving the control signal and adjusting the power supplied to the quartz heater, and a power switch connected to the power supply controller, for receiving a heating initiation signal and switching power to the quartz heater, wherein a heater monitoring system is further provided for monitoring the operating states of the quartz heater and the power supply controller and notifying an operator of any problems.

Abstract: A wet etching device used in manufacturing a semiconductor device includes a power source, a transmission device for transmitting power from the power source, and a roller for reversing top and bottom positions of a wafer placed in a processing bath using power from the power source transmitted by the transmission device. Here, the initial top and bottom positions of the wafer during loading are reversed before unloading. Accordingly, the entire surface of the wafer spends an equal amount of time in the processing bath containing a chemical solution and can thus be etched uniformly.