Abstract: Provided are a saturable absorber including at least one material selected from a group of MXenes, and a Q-switching and mode-locked pulsed laser system using the same.

Abstract: The present invention relates to a terahertz (THz) wave detecting sensor including a MXene material represented by the following Formula 1 as a sensing material: M(n+1)Xn,??[Formula 1] wherein, in Formula 1, M is at least one transition metal selected from early transition metal elements, X is at least one selected from C and N, and n is an integer selected from 1 to 3.

Abstract: The present invention relates to a terahertz (THz) wave detecting sensor including a MXene material represented by the following Formula 1 as a sensing material: M(n+1)Xn,??[Formula 1] wherein, in Formula 1, M is at least one transition metal selected from early transition metal elements, X is at least one selected from C and N, and n is an integer selected from 1 to 3.

Abstract: Provided are a method of fabricating a 3-dimensional transistor sensor and the sensor and a sensor array thereof. The method of fabricating the 3-dimensional transistor sensor includes forming an insulating layer on a silicon substrate, forming a silicon layer on the insulating layer and forming a 3-dimensional silicon fin by etching the silicon layer, forming a source area and a source electrode at one end of the silicon fin, forming a drain area and a drain electrode at the other end the silicon fin, and forming a gate area at a center of the silicon fin, surrounding three surfaces of a gate with a gate insulating layer, forming a sensing gate layer configured to surround a portion of the gate insulating layer, and sealing an upper portion of the gate insulating layer excluding the sensing gate layer.

Abstract: One aspect of the disclosed is to provide a method of manufacturing a nanoporous multilayer graphene membrane, including a first step of oxidizing a surface of a multilayer graphene membrane, a second step of reducing the oxidized surface of the multilayer graphene to carry out reductive etching such that oxidized carbon atoms on the surface are naturally and randomly dispersed, and a third step of repeatedly performing a series of the first and the second steps until nanopores penetrating the multilayer graphene are formed.

Abstract: Provided are a method of fabricating a 3-dimensional transistor sensor and the sensor and a sensor array thereof. The method of fabricating the 3-dimensional transistor sensor includes forming an insulating layer on a silicon substrate, forming a silicon layer on the insulating layer and forming a 3-dimensional silicon fin by etching the silicon layer, forming a source area and a source electrode at one end of the silicon fin, forming a drain area and a drain electrode at the other end the silicon fin, and forming a gate area at a center of the silicon fin, surrounding three surfaces of a gate with a gate insulating layer, forming a sensing gate layer configured to surround a portion of the gate insulating layer, and sealing an upper portion of the gate insulating layer excluding the sensing gate layer.

Abstract: One aspect of the disclosed is to provide a method of manufacturing a nanoporous multilayer graphene membrane, including a first step of oxidizing a surface of a multilayer graphene membrane, a second step of reducing the oxidized surface of the multilayer graphene to carry out reductive etching such that oxidized carbon atoms on the surface are naturally and randomly dispersed, and a third step of repeatedly performing a series of the first and the second steps until nanopores penetrating the multilayer graphene are formed.

Abstract: Provided are a saturable absorber including at least one material selected from a group of MXenes, and a Q-switching and mode-locked pulsed laser system using the same.

Abstract: The present invention relates to an apparatus and a method for realizing all-optical NOR logic device using the gain saturation characteristics of a semiconductor optical amplifier (SOA). More particularly, the invention relates to a 10 Gbit/s all-optical NOR logic device among all-optical logic devices, in which a signal transmitted from a given point of an optical circuit such as an optical computing circuit is used as a pump signal and a probe signal.