Patents by Inventor Young Jin Woo
Young Jin Woo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240147592Abstract: The present disclosure relates to a light emitting diode (LED) driving device that may expand a usable range of LED current and battery voltage by reducing heat generation of an integrated circuit, and an LED lighting device including the same, which may include a current controller that constantly controls an LED current flowing through an LED string and an IC heat dissipation part connected to a node between the LED string and the current controller to dissipate IC heat of the current controller, wherein when a battery voltage supplied to the LED string increases, the IC heat dissipation part reduces a first LED current flowing from the LED string to the current controller and simultaneously increases a second LED current flowing from the LED string to the current controller via the IC heat dissipation part, thereby reducing the IC heat generation of the current controller.Type: ApplicationFiled: November 1, 2023Publication date: May 2, 2024Applicant: LX SEMICON CO., LTD.Inventors: Byung Jun SEO, Ji Hwan KIM, Young Jin WOO, Jong Min LEE, Ju Pyo HONG
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Patent number: 10923179Abstract: A memory device includes a page with plurality of memory cells and a peripheral circuit that performs at least one program loop. The at least one program loop includes a program voltage applying phase for applying, during a program operation, a program voltage to a word line to which the plurality of memory cells are coupled and a program verify phase for determining whether a selected memory cell among the plurality of memory cells has been completely programmed. The memory device includes control logic that controls the peripheral circuit to: perform an auxiliary verify operation of applying an auxiliary verify voltage to the word line; perform a main verify operation of applying a main verify voltage larger than the auxiliary verify voltage to the word line; and determine a fail of the program operation, based on verify data obtained by performing the auxiliary verify operation and the main verify operation.Type: GrantFiled: October 3, 2019Date of Patent: February 16, 2021Assignee: SK hynix Inc.Inventors: Young Jin Woo, Won Yeol Choi
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Patent number: 10890626Abstract: An embodiment provides a power management integrated circuit including, inside thereof, a capacitor configured to simulate an inductor and multiple current sources configured to simulate an inductor voltage, wherein the power management integrated circuit is capable of testing whether an internal element normally operates without a separate test device including an inductor.Type: GrantFiled: June 17, 2019Date of Patent: January 12, 2021Assignee: SILICON WORKS CO., LTD.Inventor: Young Jin Woo
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Publication number: 20200286542Abstract: A memory device includes a page with plurality of memory cells and a peripheral circuit that performs at least one program loop. The at least one program loop includes a program voltage applying phase for applying, during a program operation, a program voltage to a word line to which the plurality of memory cells are coupled and a program verify phase for determining whether a selected memory cell among the plurality of memory cells has been completely programmed. The memory device includes control logic that controls the peripheral circuit to: perform an auxiliary verify operation of applying an auxiliary verify voltage to the word line; perform a main verify operation of applying a main verify voltage larger than the auxiliary verify voltage to the word line; and determine a fail of the program operation, based on verify data obtained by performing the auxiliary verify operation and the main verify operation.Type: ApplicationFiled: October 3, 2019Publication date: September 10, 2020Applicant: SK hynix Inc.Inventors: Young Jin WOO, Won Yeol CHOI
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Patent number: 10615686Abstract: An embodiment provides a technology of sharing electric charges of two or more flying capacitors in a time interval in which a plurality of flying capacitors are floated, so as to control the charging/discharging balance of the flying capacitors, in a step-up converter.Type: GrantFiled: April 22, 2019Date of Patent: April 7, 2020Assignee: SILICON WORKS CO., LTD.Inventor: Young Jin Woo
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Publication number: 20190383884Abstract: An embodiment provides a power management integrated circuit including, inside thereof, a capacitor configured to simulate an inductor and multiple current sources configured to simulate an inductor voltage, wherein the power management integrated circuit is capable of testing whether an internal element normally operates without a separate test device including an inductor.Type: ApplicationFiled: June 17, 2019Publication date: December 19, 2019Inventor: Young Jin WOO
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Publication number: 20190341845Abstract: An embodiment provides a technology of controlling, in a step-up converter using a flying capacitor, a charging/discharging balance of the flying capacitor by connecting an auxiliary capacitor in parallel to the flying capacitor in one time interval and connecting the auxiliary capacitor to the flying capacitor in series in another time interval, in each control period.Type: ApplicationFiled: April 24, 2019Publication date: November 7, 2019Inventor: Young Jin WOO
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Publication number: 20190334433Abstract: An embodiment provides a technology of sharing electric charges of two or more flying capacitors in a time interval in which a plurality of flying capacitors are floated, so as to control the charging/discharging balance of the flying capacitors, in a step-up converter.Type: ApplicationFiled: April 22, 2019Publication date: October 31, 2019Inventor: Young Jin WOO
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Patent number: 10319329Abstract: The present invention attenuates noise appearing at neighboring electrodes by causing a rising edge of one clock signal to be synchronized with a falling edge of another one clock signal when a clock signal for gate driving is generated.Type: GrantFiled: September 21, 2017Date of Patent: June 11, 2019Assignee: Silicon Works Co., Ltd.Inventors: Hyun Jin Jeon, Jin Soo Byeon, Ji Hun Kim, Young Jin Woo
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Patent number: 10298219Abstract: A pass switch circuit for transferring the voltage of an input node to an output node and a method of controlling the pass switch circuit are disclosed herein. The pass switch circuit includes a pass switch, a first capacitor, and a first switch. The pass switch transfers a voltage level from an input node to an output node. The first capacitor is configured such that the node of one side thereof has a first level of voltage when the voltage of the control node of the pass switch is in a first state. The first switch connects the node of the one side of the first capacitor with the control node of the pass switch.Type: GrantFiled: January 9, 2015Date of Patent: May 21, 2019Assignee: Silicon Works Co., Ltd.Inventors: Seung Jong Lee, Hoo Hyun Cho, Young Jin Woo
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Patent number: 10008922Abstract: A switching power supply may include: an inductor connected to an input voltage terminal; a first switch configured to form a first electrical path between the inductor and an output voltage terminal; a second switch configured to form a second electrical path between the inductor and a ground voltage terminal; a negative current sensor configured to sense an inductor current flowing through the first electrical path, and generate an over-current protection signal when the inductor current is sensed as a negative current equal to or more than a preset value; and a controller configured to enable a discontinuous conduction mode (DCM) when the over-current protection signal is generated, and turn off the first switch and turn on the second switch, in response to the enabled DCM.Type: GrantFiled: July 13, 2017Date of Patent: June 26, 2018Assignee: SILICON WORKS CO., LTD.Inventors: Won Suk Jang, Young Jin Woo, Tae Kyu Nam, Hong Kyu Choi
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Publication number: 20180090095Abstract: The present invention attenuates noise appearing at neighboring electrodes by causing a rising edge of one clock signal to be synchronized with a falling edge of another one clock signal when a clock signal for gate driving is generated.Type: ApplicationFiled: September 21, 2017Publication date: March 29, 2018Inventors: Hyun Jin JEON, Jin Soo BYEON, Ji Hun KIM, Young Jin WOO
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Publication number: 20180019660Abstract: A switching power supply may include: an inductor connected to an input voltage terminal; a first switch configured to form a first electrical path between the inductor and an output voltage terminal; a second switch configured to form a second electrical path between the inductor and a ground voltage terminal; a negative current sensor configured to sense an inductor current flowing through the first electrical path, and generate an over-current protection signal when the inductor current is sensed as a negative current equal to or more than a preset value; and a controller configured to enable a discontinuous conduction mode (DCM) when the over-current protection signal is generated, and turn off the first switch and turn on the second switch, in response to the enabled DCM.Type: ApplicationFiled: July 13, 2017Publication date: January 18, 2018Applicant: SILICON WORKS CO., LTD.Inventors: Won Suk JANG, Young Jin WOO, Tae Kyu NAM, Hong Kyu CHOI
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Patent number: 9742404Abstract: A level shifter circuit with improved time response and a control method thereof are disclosed herein. The level shifter circuit includes the output stage circuit of a level shifter and a booster circuit. The output stage circuit of the level shifter includes a first pass switch configured to transfer a voltage level of the first power supply of the level shifter to an output node, and a second pass switch connected between a second power supply and the first pass switch. The booster circuit accelerates the switching operation of the level shifter by accelerating a time response during the turning on or off operation of the first pass switch using charge sharing between a first capacitor and the parasitic capacitance of the control node of the first pass switch, which occurs via a first switch.Type: GrantFiled: August 10, 2015Date of Patent: August 22, 2017Assignee: Silicon Works Co., Ltd.Inventors: Seung Jong Lee, Young Jin Woo, Hoo Hyun Cho
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Patent number: 9625932Abstract: Disclosed herein are a switching mode converter and a method for controlling thereof. The switching mode converter includes a switching element, a bootstrap capacitor, and a control unit. The switching element is connected between one side of a first semiconductor device, another side of the first semiconductor device is connected to a ground, and an input power. The bootstrap capacitor is configured such that one side of the bootstrap capacitor is connected to the one side of the first semiconductor device. The control unit controls the output current or output voltage of a common charge pump provided to the switching element and the bootstrap capacitor in order to control the charging state of the bootstrap capacitor and the gate voltage of the switching element.Type: GrantFiled: July 30, 2013Date of Patent: April 18, 2017Assignee: Silicon Works Co., Ltd.Inventors: Wanyuan Qu, Young Jin Woo, Jin Yong Jeon, Dae Keun Han, Young Suk Son
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Patent number: 9536488Abstract: The present invention provides a gamma voltage supply circuit capable of stably supplying a gamma voltage in response to the change of external voltage and a power management IC including the same. The gamma voltage supply circuit generates a regulating voltage using an internal voltage which is not influenced by the variation in load of a source driver IC, and generates a gamma voltage using the regulating voltage.Type: GrantFiled: November 20, 2013Date of Patent: January 3, 2017Assignee: SILICON WORKS CO., LTD.Inventors: Young Jin Woo, Young Sik Kim, Ji Hun Kim, Byeong Jae Park
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Publication number: 20160204770Abstract: A level shifter circuit with improved time response and a control method thereof are disclosed herein. The level shifter circuit includes the output stage circuit of a level shifter and a booster circuit. The output stage circuit of the level shifter includes a first pass switch configured to transfer a voltage level of the first power supply of the level shifter to an output node, and a second pass switch connected between a second power supply and the first pass switch. The booster circuit accelerates the switching operation of the level shifter by accelerating a time response during the turning on or off operation of the first pass switch using charge sharing between a first capacitor and the parasitic capacitance of the control node of the first pass switch, which occurs via a first switch.Type: ApplicationFiled: August 10, 2015Publication date: July 14, 2016Inventors: Seung Jong Lee, Young Jin Woo, Hoo Hyun Cho
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Publication number: 20160149568Abstract: A pass switch circuit for transferring the voltage of an input node to an output node and a method of controlling the pass switch circuit are disclosed herein. The pass switch circuit includes a pass switch, a first capacitor, and a first switch. The pass switch transfers a voltage level from an input node to an output node. The first capacitor is configured such that the node of one side thereof has a first level of voltage when the voltage of the control node of the pass switch is in a first state. The first switch connects the node of the one side of the first capacitor with the control node of the pass switch.Type: ApplicationFiled: January 9, 2015Publication date: May 26, 2016Inventors: Seung Jong Lee, Hoo Hyun Cho, Young Jin Woo
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Publication number: 20150357274Abstract: A semiconductor device has a TSV wafer and semiconductor die mounted over the TSV wafer. A channel is formed through the TSV wafer. An encapsulant is deposited over the semiconductor die and TSV wafer. Conductive TMV are formed through the encapsulant over the conductive TSV and contact pads of the semiconductor die. The conductive TMV can be formed through the channel. A conductive layer is formed over the encapsulant and electrically connected to the conductive TMV. The conductive TMV are formed during the same manufacturing process. An insulating layer is formed over the encapsulant and conductive layer. A plurality of semiconductor die of the same size or different sizes can be stacked over the TSV wafer. The plurality of semiconductor die can be stacked over opposite sides of the TSV wafer. An internal stacking module can be stacked over the semiconductor die and electrically connected through the conductive TMV.Type: ApplicationFiled: August 21, 2015Publication date: December 10, 2015Applicant: STATS ChipPAC, Ltd.Inventors: DaeSik Choi, Young Jin Woo, TaeWoo Lee
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Patent number: 9166047Abstract: The present invention relates to a switch circuit, and more particularly, to a switch circuit that uses an LDMOS (lateral diffusion metal oxide semiconductor) device inside an IC (Integrated Circuit). In the switch circuit that uses the LDMOS device according to an embodiment of the present invention, a gate-source voltage (VGS) of the LDMOS device may be stably controlled through a current source and resistances, the characteristics of a switch may be maintained regardless of the voltages of both terminals (A and B) by using an N-type LDMOS and a P-type LDMOS in a complementary manner, and the current generated by the current source is offset inside the switch without flowing to the outside of the switch.Type: GrantFiled: June 3, 2014Date of Patent: October 20, 2015Assignee: SILICON WORKS CO., LTDInventors: Young Jin Woo, Kong Soon Park, Young Sik Kim