Abstract: The present invention relates to novel mesylate salt of N-(5-(4-(4-((dimethylamino)methyl)-3-phenyl-1H-pyrazol-1-yl)pyrimidine-2-ylamino)-4-methoxy-2-morpholinophenyl)acrylamide, a novel crystalline form thereof, and a process for preparing the same. More specifically, the present invention relates to mesylate salt of N-(5-(4-(4-((dimethylamino)methyl)-3-phenyl-1H-pyrazol-1-yl)pyrimidine-2-ylamino)-4-methoxy-2-morpholinophenyl)acrylamide, which is excellent in stability, solubility, and bioavailability when it is administered not only alone but also in combination with other drugs and which has a high purity, a crystalline form thereof, and a process for preparing the same.

Abstract: Provided are a liner assembly and a substrate processing apparatus including the liner assembly. The liner assembly includes a side liner, an intermediate liner, and a lower liner. The side liner has a cylindrical shape with upper and lower portions opened. The intermediate liner is disposed under the side liner and has a plurality of first holes passing therethrough in a vertical direction. The lower liner is disposed under the intermediate liner. Here, the plurality of first holes are formed in different sizes and numbers in a plurality of regions.

Abstract: Provided are a liner assembly and a substrate processing apparatus including the liner assembly. The liner assembly includes a side liner, an intermediate liner, and a lower liner. The side liner has a cylindrical shape with upper and lower portions opened. The intermediate liner is disposed under the side liner and has a plurality of first holes passing therethrough in a vertical direction. The lower liner is disposed under the intermediate liner. Here, the plurality of first holes are formed in different sizes and numbers in a plurality of regions.

Abstract: Provided is a gas distribution apparatus including first and second regions vertically separated therein. In the first region, a first process gas supplied to the first region from the outside is injected after being excited into a plasma state, and in the second region, a second process gas supplied after being excited into a plasma state from the outside is injected after being accommodated.

Abstract: There is provided a substrate supporter capable of securely supporting a substrate such as a wafer on which a device having a predetermined thin film pattern is formed to remove various impurities formed on the rear surface of the substrate, and a plasma processing apparatus having the same. The plasma processing apparatus includes: at least one arm; and a supporting portion extending from the arm toward a substrate seating position of the substrate, so that the plasma processing apparatus can reduce the likelihood of arc discharges compared with conventional dry etching to increase process yield and product reliability, and ensure stable mounting of a substrate.

Abstract: Provided are a substrate holder, a substrate supporting apparatus, a substrate processing apparatus, and a substrate processing method. Particularly, there are provided a substrate holder, a substrate supporting apparatus, a substrate processing apparatus, and a substrate processing method that are adapted to improve process efficiency and etch uniformity at the back surface of a substrate.

Abstract: There are provided an apparatus and method for processing a substrate. By using the apparatus and method, plasma processing can be individually performed on each of edge and rear regions of a substrate in a single chamber. The apparatus includes a chamber providing a reaction space; a stage installed in the chamber; a plasma shielding unit installed opposite to the stage in the chamber; a support unit for supporting a substrate between the stage and the plasma shielding unit; a first supply pipe provided at the stage to supply a reaction or non-reaction gas to one surface of the substrate; and second and third supply pipes provided at the plasma shielding unit, the second supply pipe supplying a reaction gas to the other surface of the substrate, the third supply pipe supplying a non-reaction gas to the other surface.

Abstract: Provided are a liner assembly and a substrate processing apparatus including the liner assembly. The liner assembly includes a side liner, an intermediate liner, and a lower liner. The side liner has a cylindrical shape with upper and lower portions opened. The intermediate liner is disposed under the side liner and has a plurality of first holes passing therethrough in a vertical direction. The lower liner is disposed under the intermediate liner. Here, the plurality of first holes are formed in different sizes and numbers in a plurality of regions.

Abstract: Provided is a substrate processing apparatus including a chamber provided with a reaction space and formed with an exhaustion opening in a center of a bottom, a substrate supporter provided in the chamber and supporting a substrate, a gas injection assembly provided to be opposite to the substrate supporter, injecting a processing gas, and generating plasma thereof, and an exhauster connected to the exhaustion opening and provided below the chamber to exhaust an inside of the chamber, in which the substrate supporter includes a substrate support supporting the substrate and a plurality of supporting posts supporting an outside of the substrate support disposing the exhausting opening therebetween.

Abstract: Provided are a plasma processing apparatus and method. The plasma processing apparatus includes a chamber, an upper electrode, a lower electrode, a substrate support, and a movement member. The upper electrode is disposed at an inner upper portion of the chamber. The lower electrode faces the upper electrode at an inner lower portion of the chamber to support a substrate such that a bevel of the substrate is exposed in a substrate level etching process. The substrate support is disposed between the upper electrode and the lower electrode to support the substrate such that a central region of a bottom surface of the substrate is exposed in a substrate backside etching process. The movement member is configured to move the substrate support to separate the substrate from the substrate support in the substrate backside etching process.

Abstract: The present invention relates to an oxide film forming method and an oxide deposition apparatus, which make it possible to form an oxide film at a low temperature of 350° C. or less by respectively supplying a silicon-containing gas including at least one of SiH4, Si2H6, Si3H8, TEOS, DCS, HCD and TSA, a purge gas, and a reaction gas including at least one of O2, N2O, O3, H2O and H2O2 into a reaction space continuously and simultaneously while rotating gas injector, and to form an oxide film with a uniform thickness along a step of a lower structure with a micro-pattern since step coverage is improved due to an atomic layer deposition process.

Abstract: Provided are a substrate holder, a substrate supporting apparatus, a substrate processing apparatus, and a substrate processing method. Particularly, there are provided a substrate holder, a substrate supporting apparatus, a substrate processing apparatus, and a substrate processing method that are adapted to improve process efficiency and etch uniformity at the back surface of a substrate.

Abstract: Provided are a plasma processing apparatus and method. The plasma processing apparatus includes a chamber, an upper electrode, a lower electrode, a substrate support, and a movement member. The upper electrode is disposed at an inner upper portion of the chamber. The lower electrode faces the upper electrode at an inner lower portion of the chamber to support a substrate such that a bevel of the substrate is exposed in a substrate level etching process. The substrate support is disposed between the upper electrode and the lower electrode to support the substrate such that a central region of a bottom surface of the substrate is exposed in a substrate backside etching process. The movement member is configured to move the substrate support to separate the substrate from the substrate support in the substrate backside etching process.

Abstract: There are provided an apparatus and method for processing a substrate. By using the apparatus and method, plasma processing can be individually performed on each of edge and rear regions of a substrate in a single chamber. The apparatus includes a chamber providing a reaction space; a stage installed in the chamber; a plasma shielding unit installed opposite to the stage in the chamber; a support unit for supporting a substrate between the stage and the plasma shielding unit; a first supply pipe provided at the stage to supply a reaction or non-reaction gas to one surface of the substrate; and second and third supply pipes provided at the plasma shielding unit, the second supply pipe supplying a reaction gas to the other surface of the substrate, the third supply pipe supplying a non-reaction gas to the other surface.

Abstract: There is provided a substrate supporter capable of securely supporting a substrate such as a wafer on which a device having a predetermined thin film pattern is formed to remove various impurities formed on the rear surface of the substrate, and a plasma processing apparatus having the same. The plasma processing apparatus includes: at least one arm; and a supporting portion extending from the arm toward a substrate seating position of the substrate, so that the plasma processing apparatus can reduce the likelihood of arc discharges compared with conventional dry etching to increase process yield and product reliability, and ensure stable mounting of a substrate.

Abstract: The present invention relates to an oxide film forming method and an oxide deposition apparatus, which make it possible to form an oxide film at a low temperature of 350° C. or less by respectively supplying a silicon-containing gas including at least one of SiH4, Si2H6, Si3H8, TEOS, DCS, HCD and TSA, a purge gas, and a reaction gas including at least one of O2, N2O, O3, H20 and H2O2 into a reaction space continuously and simultaneously while rotating gas injector, and to form an oxide film with a uniform thickness along a step of a lower structure with a micro-pattern since step coverage is improved due to an atomic layer deposition process.

Abstract: A conventional method of forming a ruthenium thin film has a problem that conditions for improving a surface morphology are contrary to those for improving a step coverage, with respect to an oxygen fraction, a pressure, a temperature, etc. Accordingly, it is difficult to obtain a thin film having the improved properties in both the surface morphology and the step coverage. This invention provides three methods for improving both the surface morphology and the step coverage. As one method of forming the ruthenium thin film, a ruthenium seed layer is first formed using a PECVD process and then a ruthenium thin film is deposited using a thermal CVD process. As another method, a first ruthenium thin film is deposited using a thermal CVD process and then a second ruthenium thin film is formed on the first ruthenium thin film using a PECVD process.

Abstract: A method for forming ruthenium film of a semiconductor device comprises (a) forming a barrier layer on a semiconductor substrate; (b) loading the semiconductor substrate on which the barrier layer is formed into a reaction chamber; (c) supplying Ru(OD)3 into the reaction chamber to be absorbed onto the barrier layer; (d) purging the reaction chamber by supplying argon gas into the reaction chamber; (e) supplying reaction gas containing oxygen into the reaction chamber and forming a ruthenium atomic layer by removing a ligand of RU(OD)3 on the barrier layer using the oxygen gas; (f) purging the reaction chamber by supplying argon gas into the reaction chamber again; and (g) forming a ruthenium film having a certain thickness on the barrier layer by repeating steps from the step (c) and to the step (f) while the semiconductor substrate is kept at a temperature of 200˜350° C.

Abstract: A conventional method of forming a ruthenium thin film has a problem that conditions for improving a surface morphology are contrary to those for improving a step coverage, with respect to an oxygen fraction, a pressure, a temperature, etc. Accordingly, it is difficult to obtain a thin film having the improved properties in both the surface morphology and the step coverage. This invention provides three methods for improving both the surface morphology and the step coverage. As one method of forming the ruthenium thin film, a ruthenium seed layer is first formed using a PECVD process and then a ruthenium thin film is deposited using a thermal CVD process. As another method, a first ruthenium thin film is deposited using a thermal CVD process and then a second ruthenium thin film is formed on the first ruthenium thin film using a PECVD process.