Abstract: A process for converting solid plastic waste to hydrocarbon oil includes melting a feed comprising solid plastic waste to produce a liquefied plastic stream and visbreaking the liquefied plastic stream in a visbreaker unit having a visbreaker furnace and a soaker vessel. Visbreaking includes heating the liquefied plastic stream in the visbreaker furnace to produce a heated liquefied plastic stream, maintaining the heated liquefied plastic stream at the reaction temperature in the soaker vessel for a residence time to produce a visbreaker effluent, and injecting a stripping gas into the soaker vessel. The stripping gas includes at least one of steam, nitrogen, helium, argon, or combinations of these. The process includes introducing the stripping gas to the liquefied plastic stream upstream of the visbreaker furnace, the heated liquefied plastic stream downstream of the visbreaker furnace, or both. The visbreaker effluent is separated to produce a liquid hydrocarbon oil.

Abstract: An internal voltage generation circuit includes a bulk voltage generator and an internal voltage driver. The A bulk voltage generator is configured to output any one of a power supply voltage signal and a core voltage signal as a first bulk voltage signal and any one of a ground voltage signal and a low voltage signal as a second bulk voltage signal. An internal voltage driver receives the first and second bulk voltage signals to pull down an internal voltage signal when a level of the internal voltage signal is higher than a level of an upper limit reference voltage signal and to pull up the internal voltage signal when a level of the internal voltage signal is lower than a level of a lower limit reference voltage signal.

Abstract: An internal voltage generation circuit includes a bulk voltage generator and an internal voltage driver. The A bulk voltage generator is configured to output any one of a power supply voltage signal and a core voltage signal as a first bulk voltage signal and any one of a ground voltage signal and a low voltage signal as a second bulk voltage signal. An internal voltage driver receives the first and second bulk voltage signals to pull down an internal voltage signal when a level of the internal voltage signal is higher than a level of an upper limit reference voltage signal and to pull up the internal voltage signal when a level of the internal voltage signal is lower than a level of a lower limit reference voltage signal.

Abstract: A semiconductor memory apparatus includes a initialization signal generating unit configured to vary a voltage level of an external voltage in response to a detection signal, the external voltage enables a power-up signal, an internal voltage generating unit configured to produce an internal voltage, the internal voltage generating unit is initialized by the power-up signal, and a detection signal generating unit configured to produce the detection signal in response to a voltage level of the internal voltage.

Abstract: An apparatus for generating pumping voltage of a multiple Chip Select (CS) mode semiconductor memory apparatus includes a high speed pumping control unit configured to produce a pumping enable signal regardless of the level of a pumping voltage to actuate the pumping unit when a plurality of banks of the semiconductor apparatus operated by different CS signals are continuously actuated.

Abstract: A semiconductor memory apparatus includes a initialization signal generating unit configured to vary a voltage level of an external voltage in response to a detection signal, the external voltage enables a power-up signal, an internal voltage generating unit configured to produce an internal voltage, the internal voltage generating unit is initialized by the power-up signal, and a detection signal generating unit configured to produce the detection signal in response to a voltage level of the internal voltage.

Abstract: An apparatus for generating pumping voltage of a multiple Chip Select (CS) mode semiconductor memory apparatus includes a high speed pumping control unit configured to produce a pumping enable signal regardless of the level of a pumping voltage to actuate the pumping unit when a plurality of banks of the semiconductor apparatus operated by different CS signals are continuously actuated.

Abstract: A semiconductor device reduces a number of boost voltage pumps by controlling an operation of the boost voltage pumps in accordance with the number of activated memory banks, thereby reducing an area which the boost voltage pumps occupy in a memory. The semiconductor device includes memory banks, a boost voltage generating controller, and boost voltage pumps. The boost voltage generating controller outputs boost voltage enable signals corresponding to the number of activated memory banks of the memory banks, wherein the number of the boost voltage enable signals is smaller than that of the memory banks. The boost voltage pumps generate a boost voltage in response to the boost voltage enable signal, and provide the boost voltage to the activated memory bank. Here, the number of the boost voltage pumps is less than that of the memory banks.

Abstract: A semiconductor device reduces a number of boost voltage pumps by controlling an operation of the boost voltage pumps in accordance with the number of activated memory banks, thereby reducing an area which the boost voltage pumps occupy in a memory. The semiconductor device includes memory banks, a boost voltage generating controller, and boost voltage pumps. The boost voltage generating controller outputs boost voltage enable signals corresponding to the number of activated memory banks of the memory banks, wherein the number of the boost voltage enable signals is smaller than that of the memory banks. The boost voltage pumps generate a boost voltage in response to the boost voltage enable signal, and provide the boost voltage to the activated memory bank. Here, the number of the boost voltage pumps is less than that of the memory banks.