Patents by Inventor Young Kyun Park
Young Kyun Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240177754Abstract: A memory system includes a memory device including an interface circuit and a semiconductor memory, and a controller to generate a command for controlling the memory device. The interface circuit receives the command from the controller; determines whether the command is for the semiconductor memory or the interface circuit; and when it is determined that the command is for the interface circuit, performs a blocking operation to block transfer of the command between the interface circuit and the semiconductor memory and performs an internal operation of the interface circuit. The internal operation includes a signal controlling operation, a training operation, a read operation, an on-die termination operation, a ZQ calibration operation, or a driving force control operation.Type: ApplicationFiled: February 8, 2024Publication date: May 30, 2024Inventors: Chang Kyun PARK, Young Sik KOH, Seung Jin PARK, Dong Hyun LEE
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Patent number: 11981659Abstract: The present invention relates to novel mesylate salt of N-(5-(4-(4-((dimethylamino)methyl)-3-phenyl-1H-pyrazol-1-yl)pyrimidine-2-ylamino)-4-methoxy-2-morpholinophenyl)acrylamide, a novel crystalline form thereof, and a process for preparing the same. More specifically, the present invention relates to mesylate salt of N-(5-(4-(4-((dimethylamino)methyl)-3-phenyl-1H-pyrazol-1-yl)pyrimidine-2-ylamino)-4-methoxy-2-morpholinophenyl)acrylamide, which is excellent in stability, solubility, and bioavailability when it is administered not only alone but also in combination with other drugs and which has a high purity, a crystalline form thereof, and a process for preparing the same.Type: GrantFiled: March 17, 2022Date of Patent: May 14, 2024Assignee: Yuhan CorporationInventors: Sang Ho Oh, Jong Gyun Kim, Se-Woong Oh, Tae Dong Han, Soo Yong Chung, Seong Ran Lee, Kyeong Bae Kim, Young Sung Lee, Woo Seob Shin, Hyun Ju, Jeong Ki Kang, Su Min Park, Dong Kyun Kim
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Publication number: 20240153435Abstract: A display driving circuit is provided. The display driving circuit includes a timing controller configured to output image data and a source control signal, a first source driver circuit configured to output first source data of the image data by activating a plurality of first data lines in accordance with the source control signal, the first data lines having a first output spreading time, a second source driver circuit configured to output second source data of the image data by activating a plurality of second data lines in accordance with the source control signal, the second data lines having a second output spreading time, and a third source driver circuit configured to output third source data of the image data by activating a plurality of third data lines in accordance with the source control signal, the third data lines having a third output spreading time, wherein the first output spreading time, the second output spreading time and the third output spreading time do not overlap.Type: ApplicationFiled: September 27, 2023Publication date: May 9, 2024Applicant: Samsung Electronics Co., Ltd.Inventors: Jun-Hong PARK, Oh Jae KWON, Suk Ki MIN, Taek Kyun SHIN, Doo-Hee LIM, Young Ho CHOI
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Patent number: 11972839Abstract: A memory system includes a memory device including an interface circuit and a semiconductor memory, and a controller to generate a command for controlling the memory device. The interface circuit receives the command from the controller; determines whether the command is for the semiconductor memory or the interface circuit; and when it is determined that the command is for the interface circuit, performs a blocking operation to block transfer of the command between the interface circuit and the semiconductor memory and performs an internal operation of the interface circuit. The internal operation includes a signal controlling operation, a training operation, a read operation, an on-die termination operation, a ZQ calibration operation, or a driving force control operation.Type: GrantFiled: July 26, 2022Date of Patent: April 30, 2024Assignee: SK hynix Inc.Inventors: Chang Kyun Park, Young Sik Koh, Seung Jin Park, Dong Hyun Lee
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Patent number: 11966119Abstract: An optical film for a display device, includes: a first refractive layer having an upper surface and a lower surface including first projections and second projections extending away from the lower surface in a first direction, the second projections having different heights than the first projections, the first projections having lateral sides with different angles of inclination that decrease in the first direction; and a second refractive layer disposed directly on the upper surface of the first refractive layer, the second refractive layer having a refractive index different from that of the first refractive layer.Type: GrantFiled: August 28, 2020Date of Patent: April 23, 2024Assignee: Samsung Display Co., Ltd.Inventors: Hye Lim Jang, Young Gu Kim, Ji Yun Park, Jong Ho Son, Jong Min Ok, Sun Young Chang, Baek Kyun Jeon, Kyung Seon Tak
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Publication number: 20240090328Abstract: The present invention relates to a multi-component host material and an organic electroluminescent device comprising the same. By comprising a specific combination of the multi-component host compounds, the organic electroluminescent device according to the present invention can provide high luminous efficiency and excellent lifespan characteristics.Type: ApplicationFiled: October 26, 2023Publication date: March 14, 2024Inventors: Hee-Choon AHN, Young-Kwang KIM, Su-Hyun LEE, Ji-Song JUN, Seon-Woo LEE, Chi-Sik KIM, Kyoung-Jin PARK, Nam-Kyun KIM, Kyung-Hoon CHOI, Jae-Hoon SHIM, Young-Jun CHO, Kyung-Joo LEE
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Patent number: 11915790Abstract: A memory system includes a memory device including an interface circuit and a semiconductor memory, and a controller to generate a command for controlling the memory device. The interface circuit receives the command from the controller; determines whether the command is for the semiconductor memory or the interface circuit; and when it is determined that the command is for the interface circuit, performs a blocking operation to block transfer of the command between the interface circuit and the semiconductor memory and performs an internal operation of the interface circuit. The internal operation includes a signal controlling operation, a training operation, a read operation, an on-die termination operation, a ZQ calibration operation, or a driving force control operation.Type: GrantFiled: May 26, 2022Date of Patent: February 27, 2024Assignee: SK hynix Inc.Inventors: Chang Kyun Park, Young Sik Koh, Seung Jin Park, Dong Hyun Lee
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Patent number: 9384209Abstract: Disclosed is a virtual file system integrating and managing multiple cloud storages. A virtual file system may comprise an API database storing information on open API of the cloud storages, a storage state database storing state information of the cloud storages, a metadata database storing metadata of the cloud storages, a cloud storage allocation part receiving an user request and selecting a cloud storage appropriate for the user request among the cloud storages by referring to the storage state database and the metadata database, and an API mapping part reading out open API information of the cloud storage selected by the cloud storage allocation part from the API database, converting the user request to an open API of the selected cloud storage, and transferring the converted open API to the selected cloud storage.Type: GrantFiled: December 10, 2013Date of Patent: July 5, 2016Assignee: POSTECH ACADEMY—INDUSTRY FOUNDATIONInventors: Jong Kim, Young Kyun Park
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Publication number: 20140164449Abstract: Disclosed is a virtual file system integrating and managing multiple cloud storages. A virtual file system may comprise an API database storing information on open API of the cloud storages, a storage state database storing state information of the cloud storages, a metadata database storing metadata of the cloud storages, a cloud storage allocation part receiving an user request and selecting a cloud storage appropriate for the user request among the cloud storages by referring to the storage state database and the metadata database, and an API mapping part reading out open API information of the cloud storage selected by the cloud storage allocation part from the API database, converting the user request to an open API of the selected cloud storage, and transferring the converted open API to the selected cloud storage.Type: ApplicationFiled: December 10, 2013Publication date: June 12, 2014Applicant: POSTECH ACADEMY - INDUSTRY FOUNDATIONInventors: Jong Kim, Young Kyun Park
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Patent number: 6532166Abstract: The present invention provides a memory device by using a single transistor, comprising a circuit including a gate of a memory cell and a P type well substrate for inputting(writing) information and another circuit including a source and a drain for outputting(reading) information. In other word, the memory device includes an information input/output circuit by using a pair of respective read and write terminals. The transistor comprises a source, a drain, and a ferroelectric element gate which are formed in a P type(or N type) well substrate. And the present invention provides a fabrication method for manufacturing the memory circuit, comprising depositing the P type (or N type) well structure on a Si wafer and forming the source, the drain and then the gate in the P type(or N type) well structure.Type: GrantFiled: September 19, 2000Date of Patent: March 11, 2003Assignee: Korea Institute of Science and TechnologyInventors: Yong Tae Kim, Young Kyun Park