Abstract: The present invention relates to a light emitting diode (LED) chip, in which a hybrid sensor is formed in a nitride-based LED structure. A chip structure embedded with such a hybrid sensor functions as an LED light emitting sensor which can monitor environmental pollution while functioning as a lighting element at the same time and has an effect of being used as a variety of environment pollution sensors according to the type of an electrode material.

Abstract: The present invention relates to a light emitting diode (LED) chip, in which a hybrid sensor is formed in a nitride-based LED structure. A chip structure embedded with such a hybrid sensor functions as an LED light emitting sensor which can monitor environmental pollution while functioning as a lighting element at the same time and has an effect of being used as a variety of environment pollution sensors according to the type of an electrode material.

Abstract: The present invention relates to a light emitting diode (LED) chip, in which a hybrid sensor is formed in a nitride-based LED structure. A chip structure embedded with such a hybrid sensor functions as an LED light emitting sensor which can monitor environmental pollution while functioning as a lighting element at the same time and has an effect of being used as a variety of environment pollution sensors according to the type of an electrode material.

Abstract: The present invention relates to a light emitting diode (LED) chip, in which a hybrid sensor is formed in a nitride-based LED structure. A chip structure embedded with such a hybrid sensor functions as an LED light emitting sensor which can monitor environmental pollution while functioning as a lighting element at the same time and has an effect of being used as a variety of environment pollution sensors according to the type of an electrode material.

Abstract: The present invention relates to a light emitting diode with metal piles and one or more passivation layers and a method for making the diode including a first steps of performing mesa etching respectively on a first semiconductor layer and a second semiconductor layer belonging to stacked layers formed on a substrate in sequence! a second step of forming a reflector layer on the mesa-etched upper and side face! a third step of contacting one or more first electrodes with the first semiconductor layer and one or more second electrodes through the reflector layer with the second semiconductor layer; a fourth step of forming a first passivation layer on the reflector layer and the contacted electrodes; and a fifth step of connecting the first electrodes to a first bonding pad through one or more first electrode lines, bring one ends of vertical extensions having the shape of a metal pile into contact with one or more second electrodes, and connecting the other ends of the vertical extensions to a second bonding

Abstract: The present invention relates to a light emitting diode with high electrostatic discharge and a fabrication method thereof, and more specifically to a light emitting diode comprising a first electrode layer provided over a upper surface of a first semiconductor layer and a upper surface of a second semiconductor layer; a transparent electrode layer formed on the upper surface of the second semiconductor layer, spaced from the first electrode layer; and a second electrode layer provided on a upper surface of the transparent electrode layer. With the present invention, there is provided a light emitting diode element with resistance against electrostatic discharge and with high reliability being strong against electrical impact, by selecting a structure arranging a form of an electrode differently from a conventional electrode.

Abstract: The present invention relates to light diffusion type light emitting diodes, more particularly, to a light emitting device having a large divergence angle by widely spreading an emitted light from a single color to a white color and a method thereof. The light emitting diode including the encapsulating layer according to the present invention is characterized by including at least two materials with different characteristics. According to the present invention, an encapsulating material for light emitting diode is mixed with at least two materials with a different polarity or a refractive index to easily form a light emitting diode. In addition, the light emitting diode die is bonded on the bottom surface of a cup, and an encapsulating material and microspheres are dispersed in the vicinity and upper portion of the light emitting diode and the entire light emitting diode, therefore the light emitting diode has a large and uniform divergence angle due to a light uniformly scattered and refracted.

Abstract: The present invention relates to a light emitting diode with metal piles and one or more passivation layers and a method for making the diode including a first steps of performing mesa etching respectively on a first semiconductor layer and a second semiconductor layer belonging to stacked layers formed on a substrate in sequence! a second step of forming a reflector layer on the mesa-etched upper and side face! a third step of contacting one or more first electrodes with the first semiconductor layer and one or more second electrodes through the reflector layer with the second semiconductor layer; a fourth step of forming a first passivation layer on the reflector layer and the contacted electrodes; and a fifth step of connecting the first electrodes to a first bonding pad through one or more first electrode lines, bring one ends of vertical extensions having the shape of a metal pile into contact with one or more second electrodes, and connecting the other ends of the vertical extensions to a second bonding

Abstract: The present invention relates to a light emitting diode with high electrostatic discharge and a fabrication method thereof, and more specifically to a light emitting diode comprising a first electrode layer provided over a upper surface of a first semiconductor layer and a upper surface of a second semiconductor layer; a transparent electrode layer formed on the upper surface of the second semiconductor layer, spaced from the first electrode layer; and a second electrode layer provided on a upper surface of the transparent electrode layer. With the present invention, there is provided a light emitting diode element with resistance against electrostatic discharge and with high reliability being strong against electrical impact, by selecting a structure arranging a form of an electrode differently from a conventional electrode.

Abstract: Disclosed herein is a package structure including at least one high power light-emitting diode to exhibit excellent heat release properties. In the package structure, a light-emitting diode chip which generates heat is directly attached to a beacon processed to protrude from part of a heat spreader having high heat conductivity, whereby an electrical wiring portion is separated from a heat release portion, thus maximizing heat release properties and realizing high luminance and reliability.

Abstract: The present invention relates to light diffusion type light emitting diodes, more particularly, to a light emitting device having a large divergence angle by widely spreading an emitted light from a single color to a white color and a method thereof. The light emitting diode including the encapsulating layer according to the present invention is characterized by including at least two materials with different characteristics. According to the present invention, an encapsulating material for light emitting diode is mixed with at least two materials with a different polarity or a refractive index to easily form a light emitting diode. In addition, the light emitting diode die is bonded on the bottom surface of a cup, and an encapsulating material and microspheres are dispersed in the vicinity and upper portion of the light emitting diode and the entire light emitting diode, therefore the light emitting diode has a large and uniform divergence angle due to a light uniformly scattered and refracted.

Abstract: Disclosed herein is a package structure including at least one high power light-emitting diode to exhibit excellent heat release properties. In the package structure, a light-emitting diode chip which generates heat is directly attached to a beacon processed to protrude from part of a heat spreader having high heat conductivity, whereby an electrical wiring portion is separated from a heat release portion, thus maximizing heat release properties and realizing high luminance and reliability.