Abstract: A substrate transporting arm and a substrate transporting apparatus including the same prevent a substrate from sliding and increase a process speed of the substrate, thereby improving productivity. The substrate transporting arm includes a body and a plurality of substrate supporters coupled to the body.

Abstract: Provided is a memory device, including a memory element on a substrate; a protection insulating pattern covering a side surface of the memory element and exposing a top surface of the memory element; an upper mold layer on the protection insulating pattern; and a bit line on and connected to the memory element, the bit line extending in a first direction, the protection insulating pattern including a first protection insulating pattern covering a lower side surface of the memory element; and a second protection insulating pattern covering an upper side surface of the memory element and including a different material from the first protection insulating pattern.

Abstract: Capacitor of a semiconductor device, and a method of fabricating the same, include sequentially forming a mold structure and a polysilicon pattern over a semiconductor substrate, patterning the mold structure using the polysilicon pattern as an etch mask to form lower electrode holes penetrating the mold structure, forming a protection layer covering a surface of the polysilicon pattern, forming lower electrodes in the lower electrode holes provided with the protection layer, removing the polysilicon pattern and the protection layer to expose upper sidewalls of the lower electrodes, removing the mold structure to expose lower sidewalls of the lower electrodes, and sequentially forming a dielectric and an upper electrode covering the lower electrodes.

Abstract: In a method of manufacturing an MRAM device, a lower electrode and a preliminary first free layer pattern sequentially stacked are formed on a substrate. An upper portion of the preliminary first free layer pattern is removed to form a first free layer pattern. A second free layer and a tunnel barrier layer are sequentially formed on the first free layer pattern. The second free layer is partially oxidized to form a second free layer pattern. A fixed layer structure is formed on the tunnel barrier layer.

Abstract: A lateral flow atomic layer deposition device according to an exemplary embodiment of the present invention eliminates a gas flow control plate in a conventional lateral flow atomic layer deposition device and controls shapes of a gas input part and a gas output part in a reactor cover to make a gas flow path to a center of a substrate shorter than a gas flow path to an edge of the substrate and thereby increase the amount of gas per unit area flowing to the center of the substrate. Therefore, film thickness in the center of the substrate in the lateral flow reactor increases.

Abstract: A TFT array substrate is provided. The TFT array substrate includes a gate electrode connected to a gate line; a source electrode connected to a data line, the data line crossing the gate line to define a pixel region; a drain electrode facing the source electrode with a channel interposed therebetween; a semiconductor layer forming the channel between the source electrode and the drain electrode; a channel passivation layer formed on the channel to protect the semiconductor layer; a pixel electrode disposed in the pixel region to contact with the drain electrode; a storage capacitor including the pixel electrode extending over the gate line to form a storage area on a gate insulating layer on which a semiconductor layer pattern and a metal layer pattern are stacked; a gate pad extending from the gate line; and a data pad connected to the data line.

Abstract: An exemplary embodiment of the present invention provides a deposition apparatus including: a substrate support for supporting a substrate; a reaction chamber wall defining a reaction chamber and contacting the substrate support; a plurality of gas inlets connected to the reaction chamber wall; a remote plasma unit connected to at least one of the plurality of gas inlets; and a gas-supplying path connected to the plurality of gas inlets and defining a reaction region along with the substrate support. A plurality of gases passing through the plurality of gas inlets move along the gas-supplying path to be directly supplied onto the substrate without contacting other parts of the reactor.

Abstract: A TFT array substrate is provided. The TFT array substrate includes: a gate electrode connected to a gate line; a source electrode connected to a data line that crosses the gate line and defines a pixel region; a drain electrode facing the source electrode with a channel between; a semiconductor layer forming the channel in between the source electrode and the drain electrode; a pixel electrode in the pixel region and contacting the drain electrode; a channel passivation layer formed on the semiconductor layer; a gate pad with a gate pad lower electrode that extends from the gate line; and a data pad having a data pad lower electrode separated from the data line.

Abstract: A method of manufacturing a substrate of a display device is disclosed. The method comprises forming a pixel electrode having a side edge that is under a patterned thermosetting insulating material layer. The method also comprises forming, from the patterned thermosetting insulating material, an insulating layer that covers the side edge of the pixel electrode by heat-treatment of the patterned thermosetting insulating material. As a result of the heat treatment of the patterned thermosetting insulating material, the patterned thermosetting insulating layer melts over the side edge of the pixel electrode.

Abstract: Disclosed are a double data rate synchronous dynamic random access memory module and a configuring method thereof. The DDR SDRAM module in accordance with an embodiment of the present invention includes: a plurality of memory chips; and a serial transceiver portion configured to serially receive first serial data including a control signal and data transferred from outside for the plurality of memory chips and to provide the control signal and the data included in the serially received first serial data to the plurality of memory chips.

Abstract: A deposition apparatus according to an exemplary embodiment of the present invention includes: a reactor; a plasma chamber connected to the reactor; a plasma electrode mounted inside of the plasma chamber; and a gas supply plate coupled with the plasma chamber to supply gas into the plasma chamber, wherein a plurality of gas holes is formed at an inner wall of the gas supply plate, and the plurality of gas supply holes is spaced apart from each other by a predetermined interval.

Abstract: A mother substrate for a liquid crystal display device includes: a substrate; a plurality of unit array patterns on the substrate, each of the plurality of unit array patterns including a gate line, a data line crossing the gate line, a thin film transistor connected to the gate line and the data line and a pixel electrode connected to the thin film transistor; a first electrostatic discharge pattern surrounding the plurality of unit array patterns; a second electrostatic discharge pattern connected to the gate line and crossing the first electrostatic discharge pattern; and a third electrostatic discharge pattern connected to the data line and crossing the first electrostatic discharge pattern, the third electrostatic discharge pattern contacting the second electrostatic discharge pattern.

Abstract: A method of fabricating a fringe field switching (FFS)-liquid crystal display (LCD) device may have the following advantage. An inferior connection between the drain electrode and the pixel electrode may be prevented by preventing formation of a copper compound on the drain electrode, by performing a back channel etching after patterning a pixel electrode, and by performing a wet strip rather than a dry strip. This may result in a direct contact between copper and ITO, thereby reducing the number of mask processes.

Abstract: A method of manufacturing a substrate of a display device is disclosed. The method comprises forming a pixel electrode having a side edge that is under a patterned thermosetting insulating material layer. The method also comprises forming, from the patterned thermosetting insulating material, an insulating layer that covers the side edge of the pixel electrode by heat-treatment of the patterned thermosetting insulating material. As a result of the heat treatment of the patterned thermosetting insulating material, the patterned thermosetting insulating layer melts over the side edge of the pixel electrode.

Abstract: A method of fabricating a fringe field switching (FFS)-liquid crystal display (LCD) device may have the following advantage. An inferior connection between the drain electrode and the pixel electrode may be prevented by preventing formation of a copper compound on the drain electrode, by performing a back channel etching after patterning a pixel electrode, and by performing a wet strip rather than a dry strip. This may result in a direct contact between copper and ITO, thereby reducing the number of mask processes.

Abstract: Capacitor of a semiconductor device, and a method of fabricating the same, include sequentially forming a mold structure and a polysilicon pattern over a semiconductor substrate, patterning the mold structure using the polysilicon pattern as an etch mask to form lower electrode holes penetrating the mold structure, forming a protection layer covering a surface of the polysilicon pattern, forming lower electrodes in the lower electrode holes provided with the protection layer, removing the polysilicon pattern and the protection layer to expose upper sidewalls of the lower electrodes, removing the mold structure to expose lower sidewalls of the lower electrodes, and sequentially forming a dielectric and an upper electrode covering the lower electrodes.

Abstract: A liquid crystal display device and a method for manufacturing the same, are discussed. The liquid crystal display device includes first and second substrates each having an active area and a non-active area, gate lines and data lines formed on the active area of the first substrate to define a plurality of pixel areas, thin film transistors formed at intersections of the gate and data lines, pixel electrodes, a common electrode formed over the second substrate, a conductive seal pattern between the first and second substrates, a common line pattern formed on the first substrate to correspond to the conductive seal pattern, and a transparent electrode pattern overlapping the common line pattern with an insulating layer interposed therebetween, the transparent electrode pattern having a width equal to or less than that of the common line pattern.

Abstract: Disclosed is a regenerative fluid machine having guide vanes on a flow channel wall. The regenerative fluid machine includes a circular plate-shaped impeller having a plurality of vanes radially formed on an outer circumference thereof at regular intervals, casings in which the impeller is housed, and flow channels, each of which has a suction hole and a discharge hole in opposite ends thereof, and which are circumferentially disposed within the casings so as to face the vanes. The plurality of guide vanes having an inclined angle (?) with respect to a radial direction protrude from the flow channel wall in a rotational direction of the impeller so that a relative inflow angle (?) of the fluid introduced into the impeller grooves is increased and thus an absolute inflow angle (?) is decreased.

Abstract: A method of fabricating a fringe field switching (FFS)-liquid crystal display (LCD) device may have the following advantage. An inferior connection between the drain electrode and the pixel electrode may be prevented by preventing formation of a copper compound on the drain electrode, by performing a back channel etching after patterning a pixel electrode, and by performing a wet strip rather than a dry strip. This may result in a direct contact between copper and ITO, thereby reducing the number of mask processes.

Abstract: A reactor configured to subject a substrate to alternately repeated surface reactions of vapor-phase reactants is disclosed. The reactor may include a reaction chamber that defines a reaction space and a gas flow control guide structure; and a substrate holder. The gas flow control guide includes one or more channels. Each of the channels widens as the channel extends from the inlet to the reaction space. At least one of the channels is configured to generate a non-uniform laminar flow at a first portion of the periphery of the reaction space such that the laminar flow includes a plurality of flow paths that provide different amounts of a fluid. The reaction chamber may include a reactor base and a reactor cover detachable from each other; and a driver configured to independently adjust at least three portions of the reactor base to provide a substantially perfect seal to the reactor space.