Patents by Inventor Young-Seok Kwon
Young-Seok Kwon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240168098Abstract: A bus bar assembly and current measuring device configured to reduce measurement errors through linearity compensation and temperature compensation for the difference in values of two or more measured currents, thereby achieving high-accuracy current measurement, is presented. The present invention discloses a bus bar assembly including: a first conductive plate and a second conductive plate each composed of a plurality of parts; and an insulator formed between the first conductive plate and the second conductive plate, wherein a common first terminal hole is formed at one end of the first conductive plate, one end of the second conductive plate, and one end of the insulator, a common second terminal hole is formed at respective opposite ends of the first conductive plate, the second conductive plate, and the insulator. According to the present invention, stable and highly reliable current measurement is possible through multiple shunt resistors based on a redundancy design.Type: ApplicationFiled: November 20, 2023Publication date: May 23, 2024Applicant: SMART ELECTRONICS INC.Inventors: Hong Il CHAE, Hyun Chang KIM, Kwang Hoon LEE, Won Seok KIM, Hyuk Jae KWON, Young Min SON, Hyeon Chang JEONG
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Publication number: 20240159837Abstract: The present invention provides a battery monitoring method, which is performed by a battery monitoring device, including: measuring a first voltage drop across both ends of a first shunt resistor of a bus bar electrically connected to a battery and a second voltage drop across both ends of a second shunt resistor, which is in parallel or serial connection with the first shunt resistor; calculating a first current and a second current flowing, respectively, through the first shunt resistor and the second shunt resistor using a first voltage drop value and a second voltage drop value; and determining a state of the battery using a difference between a first current value and a second current value. According to the present invention, it is possible to increase the reliability of monitoring information related to the battery's state by utilizing current values that have undergone linearity compensation and temperature compensation.Type: ApplicationFiled: November 9, 2023Publication date: May 16, 2024Applicant: SMART ELECTRONICS INC.Inventors: Hong Il CHAE, Hyun Chang KIM, Kwang Hoon LEE, Won Seok KIM, Hyuk Jae KWON, Young Min SON, Hyeon Chang JEONG
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Publication number: 20240125848Abstract: A leakage current detection circuit includes: a mirror circuit configured to copy a leakage current flowing through a node and generate a copy current in a copy node; an oscillation circuit including a charge storage unit, the oscillation circuit being connected to the copy node, charged with the copy current, and configured to generate an oscillation signal by charging and discharging the charge storage unit; and a calculation circuit configured to calculate an amount of the leakage current based on the oscillation signal.Type: ApplicationFiled: March 1, 2023Publication date: April 18, 2024Applicant: SK hynix Inc.Inventors: Jong Seok JUNG, Chan Keun KWON, Kyeong Hwan PARK, Young Kwan LEE, Suk Hwan CHOI
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Publication number: 20240114221Abstract: A camera module includes a housing, a reflective member positioned in the housing and changing a direction of light to a direction of an optical axis, a carrier carrying the reflective member and rotatable about a first axis with respect to the housing, and a first ball group disposed between the housing and the carrier, wherein the first ball group includes a main ball member providing the first axis of the carrier, and an auxiliary ball member disposed away from the first axis, and one or both of the housing and the carrier partially accommodates the auxiliary ball member, and includes an auxiliary guide groove extended in a circumferential direction of the first axis.Type: ApplicationFiled: December 15, 2023Publication date: April 4, 2024Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Young Hwan KWON, Nam Ki PARK, Young Bok YOON, Soon Seok KANG, Jae Won JUNG
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Publication number: 20240085720Abstract: A folded module includes a housing, a carrier provided in the housing, and a rotation holder provided on the carrier and including a reflective member. The carrier is rotatable, with respect to the housing, around a first axis formed by one rotating shaft ball, the rotation holder is rotatable with respect to the carrier around a second axis formed by two ball members, and the first axis and the second axis intersect each other, and the one rotating shaft ball and the two ball members are provided together on a plane on which both the first axis and the second axis are provided.Type: ApplicationFiled: November 17, 2023Publication date: March 14, 2024Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Young Hwan KWON, Nam Ki PARK, Young Bok YOON, Kyung Hun LEE, Soon Seok KANG
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Patent number: 9373788Abstract: A method for fabricating a semiconductor device includes supplying a first source gas including a germanium (Ge) precursor onto a semiconductor substrate for a first time period, and periodically interrupting the supplying of the first source gas for the first time period to form Ge elements on the semiconductor substrate.Type: GrantFiled: February 20, 2014Date of Patent: June 21, 2016Assignee: SK Hynix Inc.Inventors: Young Seok Kwon, Kwon Hong
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Publication number: 20160072059Abstract: A phase-change memory device including a phase-change region divided into multi layers and an operation method thereof are provided. The device includes a first phase-change layer to which a current is provided from a heating electrode, and a second phase-change layer formed with continuity to the first phase-change layer and having a different width from the first phase-change layer, and to which a current is provided from the heating electrode. The first and second phase-change layers include materials selected from a first group consisting of GeTe, GST415, GST315, GST225, GST124, GST147, and GST172 or a second group consisting of InSbSe, SnGeSe, GST, SnSbSe, and SiSbSe. The second phase-change layer includes a material different from the first phase-change layer, which is selected from the same group as the first phase-change layer and has smaller resistivity than the first phase-change layer.Type: ApplicationFiled: November 13, 2015Publication date: March 10, 2016Inventors: Jin Hyock KIM, Su Jin CHAE, Young Seok KWON, Hae Chan PARK
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Publication number: 20150318329Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate in which a word line region is formed, and a barrier metal layer arranged on the word line region and causing a Schottky junction. The barrier metal layer includes a first nitride material, in which a first material is nitrified, and a second nitride material, in which a second material is nitrified. The barrier metal layer is formed of a mixture of the first nitride material and the second nitride material. At least one of the first material or the second material is rich in a metal used to form the first nitride material or the second nitride material.Type: ApplicationFiled: July 14, 2015Publication date: November 5, 2015Inventors: Jin Hyock KIM, Keun LEE, Young Seok KWON
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Publication number: 20150318330Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate in which a word line region is formed, and a barrier metal layer arranged on the word line region and causing a Schottky junction. The barrier metal layer includes a first nitride material, in which a first material is nitrified, and a second nitride material, in which a second material is nitrified. The barrier metal layer is formed of a mixture of the first nitride material and the second nitride material. At least one of the first material or the second material is rich in a metal used to form the first nitride material or the second nitride material.Type: ApplicationFiled: July 14, 2015Publication date: November 5, 2015Inventors: Jin Hyock KIM, Keun LEE, Young Seok KWON
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Patent number: 9112137Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate in which a word line region is formed, and a barrier metal layer arranged on the word line region and causing a Schottky junction. The barrier metal layer includes a first nitride material, in which a first material is nitrified, and a second nitride material, in which a second material is nitrified. The barrier metal layer is formed of a mixture of the first nitride material and the second nitride material. At least one of the first material or the second material is rich in a metal used to form the first nitride material or the second nitride material.Type: GrantFiled: August 30, 2012Date of Patent: August 18, 2015Assignee: SK Hynix Inc.Inventors: Jin Hyock Kim, Keun Lee, Young Seok Kwon
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Publication number: 20150147844Abstract: A method for fabricating a semiconductor device includes supplying a first source gas including a germanium (Ge) precursor onto a semiconductor substrate for a first time period, and periodically interrupting the supplying of the first source gas for the first time period to form Ge elements on the semiconductor substrate.Type: ApplicationFiled: February 20, 2014Publication date: May 28, 2015Applicant: SK HYNIX INC.Inventors: Young Seok KWON, Kwon HONG
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Patent number: 9006073Abstract: A semiconductor memory device and a fabrication method thereof capable of improving electric contact characteristic between an access device and a lower electrode are provided. The semiconductor memory device includes an access device formed in a pillar shape on a semiconductor substrate, a first conductive layer formed over the access device, a protection layer formed on an edge of the first conductive layer to a predetermined thickness, and a lower electrode connected to the first conductive layer.Type: GrantFiled: May 2, 2014Date of Patent: April 14, 2015Assignee: SK Hynix Inc.Inventors: Su Jin Chae, Jin Hyock Kim, Young Seok Kwon
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Publication number: 20140301137Abstract: A phase-change memory device including a multi-level cell and an operation method thereof are provided. The device includes a first phase-change material layer to which a current is provided from a heating electrode, and a second phase-change material layer formed with continuity to the first phase-change material layer and having a different width from the first phase-change material layer, and to which a current is provided from the heating electrode. The second phase-change material layer includes a material having smaller resistivity and a lower crystallization rate than the first phase-change material layer.Type: ApplicationFiled: June 19, 2014Publication date: October 9, 2014Inventors: Jin Hyock KIM, Su Jin CHAE, Young Seok KWON, Hae Chan PARK
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Publication number: 20140242773Abstract: A semiconductor memory device and a fabrication method thereof capable of improving electric contact characteristic between an access device and a lower electrode are provided. The semiconductor memory device includes an access device formed in a pillar shape on a semiconductor substrate, a first conductive layer formed over the access device, a protection layer formed on an edge of the first conductive layer to a predetermined thickness, and a lower electrode connected to the first conductive layer.Type: ApplicationFiled: May 2, 2014Publication date: August 28, 2014Applicant: SK hynix Inc.Inventors: Su Jin CHAE, Jin Hyock KIM, Young Seok KWON
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Patent number: 8802536Abstract: A phase-change memory device with improved deposition characteristic and a method of fabricating the same are provided. The phase-change memory device includes a semiconductor substrate having a phase-change area, a first material-rich first phase-change layer forming an inner surface of the phase-change area and comprised of a hetero compound of the first material and a second material, and a second phase-change layer formed on a surface of the first phase-change layer to fill the phase-change area.Type: GrantFiled: June 18, 2013Date of Patent: August 12, 2014Assignee: SK Hynix Inc.Inventors: Keun Lee, Jin Hyock Kim, Young Seok Kwon
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Patent number: 8748860Abstract: A semiconductor memory device and a fabrication method thereof capable of improving electric contact characteristic between an access device and a lower electrode are provided. The semiconductor memory device includes an access device formed in a pillar shape on a semiconductor substrate, a first conductive layer formed over the access device, a protection layer formed on an edge of the first conductive layer to a predetermined thickness, and a lower electrode connected to the first conductive layer.Type: GrantFiled: December 12, 2012Date of Patent: June 10, 2014Assignee: SK Hynix Inc.Inventors: Su Jin Chae, Jin Hyock Kim, Young Seok Kwon
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Publication number: 20140054752Abstract: A semiconductor memory device and a fabrication method thereof capable of improving electric contact characteristic between an access device and a lower electrode are provided. The semiconductor memory device includes an access device formed in a pillar shape on a semiconductor substrate, a first conductive layer formed over the access device, a protection layer formed on an edge of the first conductive layer to a predetermined thickness, and a lower electrode connected to the first conductive layer.Type: ApplicationFiled: December 12, 2012Publication date: February 27, 2014Applicant: SK HYNIX INC.Inventors: Su Jin CHAE, Jin Hyock KIM, Young Seok KWON
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Publication number: 20130280880Abstract: A phase-change memory device with improved deposition characteristic and a method of fabricating the same are provided. The phase-change memory device includes a semiconductor substrate having a phase-change area, a first material-rich first phase-change layer forming an inner surface of the phase-change area and comprised of a hetero compound of the first material and a second material, and a second phase-change layer formed on a surface of the first phase-change layer to fill the phase-change area.Type: ApplicationFiled: June 18, 2013Publication date: October 24, 2013Inventors: Keun LEE, Jin Hyock KIM, Young Seok KWON
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Patent number: 8508021Abstract: A phase-change memory device with improved deposition characteristic and a method of fabricating the same are provided. The phase-change memory device includes a semiconductor substrate having a phase-change area, a first material-rich first phase-change layer forming an inner surface of the phase-change area and comprised of a hetero compound of the first material and a second material, and a second phase-change layer formed on a surface of the first phase-change layer to fill the phase-change area.Type: GrantFiled: December 7, 2010Date of Patent: August 13, 2013Assignee: Hynix Semiconductor Inc.Inventors: Keun Lee, Jin Hyock Kim, Young Seok Kwon
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Publication number: 20130126815Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate in which a word line region is formed, and a barrier metal layer arranged on the word line region and causing a Schottky junction. The barrier metal layer includes a first nitride material, in which a first material is nitrified, and a second nitride material, in which a second material is nitrified. The barrier metal layer is formed of a mixture of the first nitride material and the second nitride material. At least one of the first material or the second material is rich in a metal used to form the first nitride material or the second nitride material.Type: ApplicationFiled: August 30, 2012Publication date: May 23, 2013Inventors: Jin Hyock KIM, Keun Lee, Young Seok Kwon