Abstract: Methods of forming integrated circuit capacitors include the steps of forming a first electrically insulating layer having a conductive plug therein, on a semiconductor substrate, and then forming second and third electrically insulating layers of different materials on the first electrically insulating layer. A contact hole is then formed to extend through the second and third electrically insulating layers and expose the conductive plug. Next, a conductive layer is formed in the contact hole and on the third electrically insulating layer. A step is then performed to planarize the conductive layer to define a U-shaped electrode in the contact hole. The third electrically insulating layer is then etched-back to expose upper portions of outer sidewalls of the U-shaped electrode, using the second electrically insulating layer as an etch stop layer. However, the second electrically insulating layer is not removed but is left to act as a supporting layer for the U-shaped electrode.

Abstract: A storage electrode has a truncated-conical “pipe-shaped” top section having a small inner diameter, mounted on a cylindrical base section having a large inner diameter. To fabricate the storage electrode, a buried contact plug is formed on a first insulating layer on a wafer, and an etching stop layer and a second insulating layer are formed on the first insulating layer. A third insulating layer is formed on the second insulating layer after implanting impurities into the second insulating layer. An opening is formed by anisotropically etching the third insulating layer and the second insulating layer using a photoresist pattern as an etching mask. A cleaning process is carried out such that the second insulating layer exposed through the opening is isotropically etched. After depositing polysilicon along a profile of the second and third insulating layers to a uniform thickness, the remaining third and second insulating layers are removed.

Abstract: A storage electrode has a truncated-conical “pipe-shaped” top section having a small inner diameter, mounted on a cylindrical base section having a large inner diameter. To fabricate the storage electrode, a buried contact plug is formed on a first insulating layer on a wafer, and an etching stop layer and a second insulating layer are formed on the first insulating layer. A third insulating layer is formed on the second insulating layer after implanting impurities into the second insulating layer. An opening is formed by anisotropically etching the third insulating layer and the second insulating layer using a photoresist pattern as an etching mask. A cleaning process is carried out such that the second insulating layer exposed through the opening is isotropically etched. After depositing polysilicon along a profile of the second and third insulating layers to a uniform thickness, the remaining third and second insulating layers are removed.

Abstract: A storage electrode has a truncated-conical “pipe-shaped” top section having a small inner diameter, mounted on a cylindrical base section having a large inner diameter. To fabricate the storage electrode, a buried contact plug is formed on a first insulating layer on a wafer, and an etching stop layer and a second insulating layer are formed on the first insulating layer. A third insulating layer is formed on the second insulating layer after implanting impurities into the second insulating layer. An opening is formed by anisotropically etching the third insulating layer and the second insulating layer using a photoresist pattern as an etching mask. A cleaning process is carried out such that the second insulating layer exposed through the opening is isotropically etched. After depositing polysilicon along a profile of the second and third insulating layers to a uniform thickness, the remaining third and second insulating layers are removed.

Abstract: A storage electrode has a truncated-conical “pipe-shaped” top section having a small inner diameter, mounted on a cylindrical base section having a large inner diameter. To fabricate the storage electrode, a buried contact plug is formed on a first insulating layer on a wafer, and an etching stop layer and a second insulating layer are formed on the first insulating layer. A third insulating layer is formed on the second insulating layer after implanting impurities into the second insulating layer. An opening is formed by anisotropically etching the third insulating layer and the second insulating layer using a photoresist pattern as an etching mask. A cleaning process is carried out such that the second insulating layer exposed through the opening is isotropically etched. After depositing polysilicon along a profile of the second and third insulating layers to a uniform thickness, the remaining third and second insulating layers are removed.

Abstract: Methods of forming integrated circuit capacitors include the steps of forming a first electrically insulating layer having a conductive plug therein, on a semiconductor substrate, and then forming second and third electrically insulating layers of different materials on the first electrically insulating layer. A contact hole is then formed to extend through the second and third electrically insulating layers and expose the conductive plug. Next, a conductive layer is formed in the contact hole and on the third electrically insulating layer. A step is then performed to planarize the conductive layer to define a U-shaped electrode in the contact hole. The third electrically insulating layer is then etched-back to expose upper portions of outer sidewalls of the U-shaped electrode, using the second electrically insulating layer as an etch stop layer. However, the second electrically insulating layer is not removed but is left to act as a supporting layer for the U-shaped electrode.

Abstract: Integrated circuit capacitors include a U-shaped capacitor electrode on a substrate and an HSG silicon layer extending on an inner surface of the U-shaped capacitor electrode. A HSG protection layer comprising silicon nitride is also provided. The HSG protection layer extends on the HSG silicon layer but not on an outer surface of the U-shaped capacitor electrode. A first capacitor dielectric layer comprising silicon nitride extends on the silicon nitride HSG protection layer and on the outer surface of the U-shaped capacitor electrode. A second capacitor dielectric layer comprising an oxide extends on the first capacitor dielectric layer and an upper capacitor electrode extends on the second capacitor dielectric layer.