Patents by Inventor Young Woo JI

Young Woo JI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11193962
    Abstract: An electronic circuit includes first to third transistors. The first transistor has a first channel width and a first channel length and generates a first potential difference by passing an operating current based on a first operating voltage. The second transistor has a second channel width and a second channel length and generates a second potential difference based on the operating current. The third transistor generates a third potential difference based on a second operating voltage and the operating current. A sum of a level of the first operating voltage and a level of the first potential difference corresponds to a sum of a level of the second operating voltage, a level of the second potential difference, and a level of the third potential difference. The first channel width is greater than the second channel width, or the first channel length is longer than the second channel length.
    Type: Grant
    Filed: April 14, 2020
    Date of Patent: December 7, 2021
    Assignee: POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION
    Inventors: Jae Yoon Sim, Young Woo Ji
  • Publication number: 20200393500
    Abstract: An electronic circuit includes first to third transistors. The first transistor has a first channel width and a first channel length and generates a first potential difference by passing an operating current based on a first operating voltage. The second transistor has a second channel width and a second channel length and generates a second potential difference based on the operating current. The third transistor generates a third potential difference based on a second operating voltage and the operating current. A sum of a level of the first operating voltage and a level of the first potential difference corresponds to a sum of a level of the second operating voltage, a level of the second potential difference, and a level of the third potential difference. The first channel width is greater than the second channel width, or the first channel length is longer than the second channel length.
    Type: Application
    Filed: April 14, 2020
    Publication date: December 17, 2020
    Applicant: POSTECH Research and Business Development Foundation
    Inventors: Jae Yoon SIM, Young Woo JI
  • Patent number: 9671811
    Abstract: A low-power bandgap reference voltage generator using a leakage current may include: a medium voltage generation unit configured to generate a medium voltage based on the absolute temperature, using a leakage current; a low power amplifier configured to amplify the medium voltage and outputting an operational amplification voltage; and a reference voltage output unit configured to output a reference voltage based on the operational amplification voltage at a target level.
    Type: Grant
    Filed: May 10, 2016
    Date of Patent: June 6, 2017
    Assignee: POSTECH ACADEMY-INDUSTRY FOUNDATION
    Inventors: Jae Yoon Sim, Jong Mi Lee, Young Woo Ji
  • Publication number: 20160334826
    Abstract: A low-power bandgap reference voltage generator using a leakage current may include: a medium voltage generation unit configured to generate a medium voltage based on the absolute temperature, using a leakage current; a low power amplifier configured to amplify the medium voltage and outputting an operational amplification voltage; and a reference voltage output unit configured to output a reference voltage based on the operational amplification voltage at a target level.
    Type: Application
    Filed: May 10, 2016
    Publication date: November 17, 2016
    Applicant: POSTECH ACADEMY-INDUSTRY FOUNDATION
    Inventors: Jae Yoon SIM, Jong Mi LEE, Young Woo JI