Abstract: A light-emitting diode including a support substrate, a semiconductor stack disposed on the support substrate and including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and including a groove exposing a portion of the semiconductor stack, an insulation layer disposed between the support substrate and the semiconductor stack and disposed in the groove, and a first electrode including a first electrode pad and a first electrode extension and contacting the n-type compound semiconductor layer of the semiconductor stack, in which the first electrode extension is connected to the first electrode pad, and the first electrode extension is formed along an outer boundary of the light-emitting diode.

Abstract: A light-emitting diode driving device enabling an excellent heat-dissipation function and high-efficient driving is disclosed. The disclosed LED driving device comprises: a power source unit providing an alternate current voltage; a rectification unit communicatively coupled to the power source and rectifying the alternate current voltage; a driving signal generation unit configured to receive the rectified voltage from the rectification unit and generate a primary driving signal by using the rectified voltage; and an LED driving signal modulation unit communicatively coupled to the driving signal generator, the LED driving signal modulation unit configured to receive the primary driving signal and generating a secondary pulse driving signal by modulating the primary driving signal, and LED groups including LEDs and configured to receive the primary driving signal or the second pulse driving signal such that the LED groups operate responsive to the primary driving signal or the secondary pulse driving signal.

Abstract: A light-emitting diode including a support substrate, a semiconductor stack disposed on the support substrate and including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and including a groove exposing a portion of the semiconductor stack, an insulation layer disposed between the support substrate and the semiconductor stack and disposed in the groove, and a first electrode including a first electrode pad and a first electrode extension and contacting the n-type compound semiconductor layer of the semiconductor stack, in which the first electrode extension is connected to the first electrode pad, and the first electrode extension is formed along an outer boundary of the light-emitting diode.

Abstract: A light-emitting diode includes a support substrate, a semiconductor stack disposed on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer and a n-type semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and having a groove exposing a portion of the semiconductor stack, a first electrode pad contacting the n-type compound semiconductor layer of the semiconductor stack, an electrode extension connected to the first electrode pad, the electrode extension disposed directly over the groove along a line perpendicular to the support substrate, an upper insulation layer disposed between the first electrode pad and the semiconductor stack. The electrode extension includes an Ni layer contacting the n-type compound semiconductor layer, and two Au layers disposed on the Ni layer.

Abstract: Disclosed are a method for separating a growth substrate, a method for manufacturing a light-emitting diode, and the light-emitting diode. The method for separating a growth substrate, according to one embodiment, comprises: preparing a growth substrate; forming a sacrificial layer and a mask pattern on the growth substrate; etching the sacrificial layer by using electrochemical etching (ECE); covering the mask pattern, and forming a plurality of nitride semiconductor stacking structures which are separated from each other by an element separation area; attaching a support substrate to the plurality of semiconductor stacking structures, wherein the support substrate has a plurality of through-holes connected to the element separation area; and separating the growth substrate from the nitride semiconductor stacking structures.

Abstract: Exemplary embodiments of the present invention provide a substrate recycling method and a recycled substrate. The method includes separating a substrate having a first surface from an epitaxial layer, performing a first etching of the first surface using electrochemical etching, and performing, after the first etching, a second etching of the first surface using chemical etching, dry etching, or performing, after the first etching, chemical mechanical polishing of the first surface.

Abstract: Disclosed herein are a high efficiency light emitting diode and a method of fabricating the same. The light emitting diode includes a semiconductor stacked structure disposed on the support substrate and including a gallium nitride-based p-type semiconductor layer, a gallium nitride-based active layer, and a gallium nitride-based n-type semiconductor layer; and a reflecting layer disposed between the support substrate and the semiconductor stacked structure, wherein the semiconductor stacked structure includes a plurality of protrusions having a truncated cone shape and fine cones formed on top surfaces of the protrusions. By this configuration, light extraction efficiency of the semiconductor stacked structure having low dislocation density can be improved.

Abstract: A light-emitting diode includes a support substrate, a semiconductor stack disposed on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer and a n-type semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and having a groove exposing a portion of the semiconductor stack, a first electrode pad contacting the n-type compound semiconductor layer of the semiconductor stack, an electrode extension connected to the first electrode pad, the electrode extension disposed directly over the groove along a line perpendicular to the support substrate, an upper insulation layer disposed between the first electrode pad and the semiconductor stack. The electrode extension includes an Ni layer contacting the n-type compound semiconductor layer, and two Au layers disposed on the Ni layer.

Abstract: A wafer and a method for forming the same are disclosed. The wafer forming method can separate respective chips from others by performing a Deep Reactive Ion Etching (DRIE) process on a wafer including a plurality of chips. The wafer includes a plurality of chips configured to be arranged in row and column directions on the wafer, a scribe line configured to be formed among the plurality of chips so as to separate each chip, and an align key line configured to be formed in one side of the wafer so as to form an align key pattern.

Abstract: Disclosed are a light-emitting diode and a method for manufacturing the same. A light-emitting diode according to one aspect of the present invention includes: a first conductive clad layer; a light-scattering pattern configured, in the first conductive clad layer, having a refractive index different from that of the first conductive clad layer; an active layer located under the first conductive clad layer; a second conductive clad layer located under the active layer; a first electrode configured to be electrically connected to the first conductive clad layer; and a second electrode configured to be electrically connected to the second conductive clad layer. The light-scattering pattern can improve light extraction efficiency.

Abstract: A light-emitting diode driving device enabling an excellent heat-dissipation function and high-efficient driving is disclosed. The disclosed LED driving device comprises: a power source unit providing an alternate current voltage; a rectification unit communicatively coupled to the power source and rectifying the alternate current voltage; a driving signal generation unit configured to receive the rectified voltage from the rectification unit and generate a primary driving signal by using the rectified voltage; and an LED driving signal modulation unit communicatively coupled to the driving signal generator, the LED driving signal modulation unit configured to receive the primary driving signal and generating a secondary pulse driving signal by modulating the primary driving signal, and LED groups including LEDs and configured to receive the primary driving signal or the second pulse driving signal such that the LED groups operate responsive to the primary driving signal or the secondary pulse driving signal.

Abstract: Disclosed are a method for separating a growth substrate, a method for manufacturing a light-emitting diode, and the light-emitting diode. The method for separating a growth substrate, according to one embodiment, comprises: preparing a growth substrate; forming a sacrificial layer and a mask pattern on the growth substrate; etching the sacrificial layer by using electrochemical etching (ECE); covering the mask pattern, and forming a plurality of nitride semiconductor stacking structures which are separated from each other by an element separation area; attaching a support substrate to the plurality of semiconductor stacking structures, wherein the support substrate has a plurality of through-holes connected to the element separation area; and separating the growth substrate from the nitride semiconductor stacking structures.

Abstract: Exemplary embodiments of the present invention disclose a method of fabricating a gallium nitride (GaN) based semiconductor device. The method includes growing GaN based semiconductor layers on a first surface of a GaN substrate to form a semiconductor stack, and separating at least a first portion of the GaN substrate from the semiconductor stack using a wire cutting technique.

Abstract: A method of fabricating a gallium nitride (GaN)-based semiconductor device. The method includes preparing a GaN substrate having lower and upper surfaces; growing GaN-based semiconductor layers on the upper surface of the GaN substrate to form a semiconductor stack; forming a support substrate on the semiconductor stack; and separating the GaN substrate from the semiconductor stack. The separating of the GaN substrate includes irradiating a laser from the lower surface of the GaN substrate. The laser is transmitted through the lower surface of the GaN substrate and forms a laser absorption region inside a structure consisting of the GaN substrate and the semiconductor stack.

Abstract: Disclosed are a light-emitting diode and a method for manufacturing the same. A light-emitting diode according to one aspect of the present invention includes: a first conductive clad layer; a light-scattering pattern configured, in the first conductive clad layer, having a refractive index different from that of the first conductive clad layer; an active layer located under the first conductive clad layer; a second conductive clad layer located under the active layer; a first electrode configured to be electrically connected to the first conductive clad layer; and a second electrode configured to be electrically connected to the second conductive clad layer. The light-scattering pattern can improve light extraction efficiency.

Abstract: Disclosed herein are a high efficiency light emitting diode and a method of fabricating the same. The light emitting diode includes a semiconductor stacked structure disposed on the support substrate and including a gallium nitride-based p-type semiconductor layer, a gallium nitride-based active layer, and a gallium nitride-based n-type semiconductor layer; and a reflecting layer disposed between the support substrate and the semiconductor stacked structure, wherein the semiconductor stacked structure includes a plurality of protrusions having a truncated cone shape and fine cones formed on top surfaces of the protrusions. By this configuration, light extraction efficiency of the semiconductor stacked structure having low dislocation density can be improved.

Abstract: A wafer and a method for forming the same are disclosed. The wafer forming method can separate respective chips from others by performing a Deep Reactive Ion Etching (DRIE) process on a wafer including a plurality of chips. The wafer includes a plurality of chips configured to be arranged in row and column directions on the wafer, a scribe line configured to be formed among the plurality of chips so as to separate each chip, and an align key line configured to be formed in one side of the wafer so as to form an align key pattern.

Abstract: Exemplary embodiments of the present invention provide a substrate recycling method and a recycled substrate. The method includes separating a substrate having a first surface from an epitaxial layer, performing a first etching of the first surface using electrochemical etching, and performing, after the first etching, a second etching of the first surface using chemical etching, dry etching, or performing, after the first etching, chemical mechanical polishing of the first surface.

Abstract: Exemplary embodiments of the present invention disclose a method of fabricating a gallium nitride (GaN) based semiconductor device. The method includes growing GaN based semiconductor layers on a first surface of a GaN substrate to form a semiconductor stack, and separating at least a first portion of the GaN substrate from the semiconductor stack using a wire cutting technique.

Abstract: A method of fabricating a gallium nitride (GaN)-based semiconductor device. The method includes preparing a GaN substrate having lower and upper surfaces; growing GaN-based semiconductor layers on the upper surface of the GaN substrate to form a semiconductor stack; forming a support substrate on the semiconductor stack; and separating the GaN substrate from the semiconductor stack. The separating of the GaN substrate includes irradiating a laser from the lower surface of the GaN substrate. The laser is transmitted through the lower surface of the GaN substrate and forms a laser absorption region inside a structure consisting of the GaN substrate and the semiconductor stack.