Abstract: A method for forming a thin film having durability at a low cost is provided. A film formation apparatus 1 is used in the film formation method. The apparatus 1 comprises a vacuum container 11 in which a substrate 100 is placed at a lower part, a vacuum pump 15 for exhaust inside the container 11, a storage container 23 for storing a coating agent 21 provided outside the container 11, and a nozzle having an ejection part 19 capable of ejecting the coating agent 21 at its one end. A solution including two or more kinds of materials is used as the coating agent 21. The solution is ejected to the substrate in an atmosphere at a pressure set based on vapor pressures of respective materials composing the solution.

Abstract: Provided are a thin film formation apparatus, a sputtering cathode, and a method of forming thin film, capable of forming a multilayer optical film at a high film deposition rate on a large-sized substrate. The thin film formation apparatus forms a thin film of a metal compound on a substrate in a vacuum chamber by sputtering. The vacuum chamber is provided in its inside with targets composed of metal or a conductive metal compound, and an active species source for generating an active species of a reactive gas. The active species source is provided with gas sources for supplying the reactive gas, and an energy source for supplying energy into the vacuum chamber to excite the reactive gas to a plasma state. The energy source is provided between itself and the vacuum chamber with a dielectric window for supplying the energy into the vacuum chamber.

Abstract: A thin film formation method is provided, by which needless film formation due to trial film formation is omitted and film formation efficiency can be improved. This invention is a method for sputtering targets to form a film A having an intended film thickness of T1 as the first thin film on a substrate and monitor substrate held and rotated by a rotation drum and, subsequently, furthermore sputtering the targets used in forming the film A to form a film C having an intended film thickness of T3 as the second thin film, which is another thin film having the same composition as the film A; comprising film thickness monitoring steps S4 and S5, a stopping step S7, an actual time acquisition step S8, an actual rate calculating step S9 and a necessary time calculating step S24.

Abstract: The method for depositing a film of the present invention includes the first film deposition step of depositing a first film 103 having hardness higher than hardness of a substrate 101 on a surface of the substrate 101, the first irradiation step of irradiating particles having energy on the first film 103, and the second film deposition step of depositing an oil-repellent film 105 on a surface of the first film 103 subjected to the first irradiation step. A method for depositing a film enabling production of an oil-repellent substrate includes an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.

Abstract: A magnetic field generator arranged behind a target and for generating a magnetic field on a front surface of the target based on magnetic force lines can include a ring-shaped outer magnetic body having a pole axis in a parallel direction (X-direction) with respect to the target surface, a center magnetic body arranged on an inner side of the outer magnetic body and having a pole axis in a parallel direction (X-direction) with the direction of the pole axis of the outer magnetic body, a yoke plate for supporting the outer magnetic body and the center magnetic body from behind, and a magnetic permeable plate for changing a magnetic field distribution of the front surface of the target. The magnetic permeable plate is arranged so as to be supported by the yoke plate from behind.

Abstract: A method for forming a thin film having durability at a low cost is provided. A film formation apparatus 1 is used in the film formation method. The apparatus 1 comprises a vacuum container 11 in which a substrate 100 is placed at a lower part, a vacuum pump 15 for exhaust inside the container 11, a storage container 23 for storing a coating agent 21 provided outside the container 11, and a nozzle having an ejection part 19 capable of ejecting the coating agent 21 at its one end. A solution including two or more kinds of materials including a first material (S1) and a second material (S2) having a higher vapor pressure (P2) than a vapor pressure (P1) of the Si is used as the coating agent 21. The coating agent 21 is ejected to the substrate in an atmosphere with a pressure higher than P1 and lower than P2.

Abstract: A method for forming a thin film having durability at a low cost is provided. A film formation apparatus 1 is used in the film formation method. The apparatus 1 comprises a vacuum container 11 in which a substrate 100 is placed at a lower part, a vacuum pump 15 for exhaust inside the container 11, a storage container 23 for storing a coating agent 21 provided outside the container 11, and a nozzle having an ejection part 19 capable of ejecting the coating agent 21 at its one end. A solution including two or more kinds of materials is used as the coating agent 21. The solution is ejected to the substrate in an atmosphere at a pressure set based on vapor pressures of respective materials composing the solution.

Abstract: A method for forming a thin film having durability at a low cost is provided. A film formation apparatus 1 is used in the film formation method. The apparatus 1 comprises a vacuum container 11, in which a substrate 100 is placed at a lower part, a vacuum pump 15 for exhaust inside the container 11, a storage container 23 for storing a coating agent 21 provided outside the container 11, a nozzle having an ejection part 19 capable of ejecting the coating agent 21 at its one end and a pressurizing means (a gas supply source 29, etc.) for pressurizing a liquid surface of a coating agent 21 stored in the storage container 23. A solution, which includes two or more kinds of materials including a first material (S1) and a second material (S2) having a higher vapor pressure (P2) than a vapor pressure (P1) of the S1 and has a concentration of the first material being 0.01 wt % or more, is used as the coating agent 21.

Abstract: Provided is a thin film forming apparatus for reducing operation time and cost by forming a film only on a specific portion on substrates. A substrate holding mechanism provided in the apparatus includes: substrate holding members holding substrates in a manner that a part of a non-film forming portion of a substrate overlaps the other substrate and a film forming portion is exposed, a support member supporting the substrate holding members, and a rotation member which rotates the support member. The substrate holding members include: holding surfaces holding the substrates and disposed between a film forming source and the substrates, step portions formed between the holding surfaces in a manner that ends of the substrates respectively contact with the step portions, and opening portions formed on the holding surfaces of the portion corresponding to the film forming portion when the ends of the substrates contact with the step portions.

Abstract: A translucent hard thin film having high transmissivity and film strength is provided. The translucent hard thin film can be composed of a laminated film formed on a substrate surface, wherein the laminated film has a superlattice structure obtained by stacking a plurality of SiO2 layer and SiC layers alternately and the entire film thickness is 3000 nm or more. A film thickness per layer is 5 to 30 nm in a SiC layer and 30% to 60% of that of the SiO2 layer in a SiC layer.

Abstract: The method for depositing a film of the present invention comprises the first film deposition step of depositing a first film 103 having hardness higher than hardness of a substrate 101 on a surface of the substrate 101, the first irradiation step of irradiating particles having energy on the first film 103, and the second film deposition step of depositing an oil-repellent film 105 on a surface of the first film 103 subjected to the first irradiation step. According to the present invention, a method for depositing a film enabling production of an oil-repellent substrate comprising an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.

Abstract: The method for depositing a film of the present invention comprises the first irradiation step of irradiating particles having energy on a surface of a substrate 101, the first film deposition step of depositing a first film 103 on the surface of the substrate 101 subjected to the first irradiation step by using a dry process, and the second film deposition step of depositing a second film 105 having oil repellency on a surface of the first film 103. According to the present invention, a method for depositing a film enabling production of an oil-repellent substrate comprising an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.

Abstract: The method for depositing a film of the present invention comprises the first film deposition step of depositing a first film 103 having hardness higher than hardness of a substrate 101 on a surface of the substrate 101, the first irradiation step of irradiating particles having energy on the first film 103, and the second film deposition step of depositing an oil-repellent film 105 on a surface of the first film 103 subjected to the first irradiation step. According to the present invention, a method for depositing a film enabling production of an oil-repellent substrate comprising an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.

Abstract: A film deposition method of a silicon carbide thin film having a high transmissivity and high film strength applicable for optical use purposes is provided. The film can be formed safely and efficiently in a short time and on a low heat resistance substrate. The method can include depositing a silicon carbide thin film on a moving substrate by using a film formation apparatus configured such that a reaction process region and film formation process regions are arranged spatially separated from one another in a vacuum container. Silicon targets can be sputtered in one region and carbon targets can be sputtered in another region. Thereby, an interlayer thin film containing silicon and carbon is formed on the substrate. Next, in another region, the interlayer thin film can be exposed to plasma generated in an atmosphere of a mixed gas including inert gas and hydrogen.

Abstract: Provided are a thin film formation apparatus, a sputtering cathode, and a method of forming thin film, capable of forming a multilayer optical film at a high film deposition rate on a large-sized substrate. The thin film formation apparatus forms a thin film of a metal compound on a substrate in a vacuum chamber by sputtering. The vacuum chamber is provided in its inside with targets composed of metal or a conductive metal compound, and an active species source for generating an active species of a reactive gas. The active species source is provided with gas sources for supplying the reactive gas, and an energy source for supplying energy into the vacuum chamber to excite the reactive gas to a plasma state. The energy source is provided between itself and the vacuum chamber with a dielectric window for supplying the energy into the vacuum chamber.

Abstract: An optical film thickness measuring device, enabling direct measurement of a film thickness of a product in real time accurately without a monitor substrate, includes: a projector, a light receiver, inner beam splitters disposed in a base substrate holder to reflect a measurement beam to a base substrate, an inner optical reflector that totally reflects a measurement beam from the closest inner beam splitter, external beam splitters the measurement beam from the inner beam splitters toward the light receiver, and an outer optical reflector that reflects the measurement beam from the optical reflector toward the light receiver. The measurement beam reflected by the inner beam splitters and the inner optical reflector is passed through the base substrate and then reflected by the external beam splitters and the outer optical reflector to be guided to the light receiver, so that the measurement beam is received by the light receiver.

Abstract: A translucent hard thin film having high transmissivity and film strength is provided. The translucent hard thin film can be composed of a laminated film formed on a substrate surface, wherein the laminated film has a superlattice structure obtained by stacking a plurality of SiO2 layer and SiC layers alternately and the entire film thickness is 3000 nm or more. A film thickness per layer is 5 to 30 nm in a SiC layer and 30% to 60% of that of the SiO2 layer in a SiC layer.

Abstract: An optical thin-film vapor deposition apparatus and method are capable of producing an optical thin-film by vapor depositing a vapor deposition substance onto substrates (14) within a vacuum vessel (10). A dome shaped holder (12) is disposed within the vacuum vessel (10) and holds the substrates (14). A drive rotates the dome shaped holder (12). A vapor depositing source (34) is disposed oppositely to the substrates (14). An ion source (38) irradiates ions to the substrates (14). A neutralizer (40) irradiates electrons to the substrates (14). The ion source (38) is disposed at an angle between an axis, along which ions are irradiated from the ion source (38), and a line perpendicular to a surface of each of the substrates (14). The angle is between 8° inclusive and 40° inclusive. A ratio of a distance in a vertical direction between (i) a center of rotational axis of the dome shaped holder (12), and (ii) a center of the ion source (38), relative to a diameter of the dome shaped holder (12), is between 0.

Abstract: A film deposition method of a silicon carbide thin film having a high transmissivity and high film strength applicable for optical use purposes is provided. The film can be formed safely and efficiently in a short time and on a low heat resistance substrate. The method can include depositing a silicon carbide thin film on a moving substrate by using a film formation apparatus configured such that a reaction process region and film formation process regions are arranged spatially separated from one another in a vacuum container. Silicon targets can be sputtered in one region and carbon targets can be sputtered in another region. Thereby, an interlayer thin film containing silicon and carbon is formed on the substrate. Next, in another region, the interlayer thin film can be exposed to plasma generated in an atmosphere of a mixed gas including inert gas and hydrogen.

Abstract: A method for depositing a film includes depositing an oil repellent film having an enhanced abrasion resistance properties and which is suitable for practical use. A film deposition system, wherein a substrate holder having a substrate holding surface for holding a plurality of substrates is provided rotatably to inside a vacuum container, can include an ion source provided to inside the vacuum container to have a configuration and in an arrangement and/or a direction, by which an ion beam can be irradiated only to a partial region of the substrate holding surface. A deposition source can be provided to inside the vacuum container such that a film deposition material of an oil repellent film can be supplied to the whole region of the substrate holding surface. An operation of the ion source can be stopped before starting operation of the deposition source.