Abstract: An imaging unit of an embodiment of the present technology includes: a detector that detects temperature or remaining battery capacity; an imaging device that obtains a captured image; and a first correction section that changes, on a basis of a detection result of the detector, electronic hand shake correction accuracy with respect to the captured image obtained by the imaging device when an electronic hand shake correction function is enabled.

Abstract: The present technology relates to a solid-state image sensor, an imaging control method, a signal processing method, and an electronic apparatus that suppress the deterioration of image quality, which is caused by the difference of sensitivity between pixels. A solid-state image sensor includes: a pixel array unit including a plurality of pixels arranged, the plurality of pixels including a plurality of kinds of pixels, the plurality of kinds of pixels including a first pixel and a second pixel, the first pixel having the highest sensitivity, the second pixel having a sensitivity lower than the sensitivity of the first pixel; and a control unit that controls at least one of an analog gain and exposure time of/for the respective pixels depending on a ratio between the sensitivities of the first pixel and the second pixel. The present technology is applicable to a solid-state image sensor such as a CMOS image sensor.

Abstract: An imaging unit of an embodiment of the present technology includes: a detector that detects temperature or remaining battery capacity; an imaging device that obtains a captured image; and a first correction section that changes, on a basis of a detection result of the detector, electronic hand shake correction accuracy with respect to the captured image obtained by the imaging device when an electronic hand shake correction function is enabled.

Abstract: The present technology relates to a solid-state image sensor, an imaging control method, a signal processing method, and an electronic apparatus that suppress the deterioration of image quality, which is caused by the difference of sensitivity between pixels. A solid-state image sensor includes: a pixel array unit including a plurality of pixels arranged, the plurality of pixels including a plurality of kinds of pixels, the plurality of kinds of pixels including a first pixel and a second pixel, the first pixel having the highest sensitivity, the second pixel having a sensitivity lower than the sensitivity of the first pixel; and a control unit that controls at least one of an analog gain and exposure time of/for the respective pixels depending on a ratio between the sensitivities of the first pixel and the second pixel. The present technology is applicable to a solid-state image sensor such as a CMOS image sensor.