Patents by Inventor Yousuke Itagaki
Yousuke Itagaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8051799Abstract: An apparatus includes a housing defining a chamber in which an electric field is generated, and an internal member provided in the chamber. At least one part of the internal member is formed of a dielectric material. A process is executed in the chamber so that a dielectric deposit is formed on the at least one part of the internal member. An m1(d?1/dm1) value of the dielectric material and an m2(d?2/dm2) value of the dielectric deposit are set so that production of particles from the deposit is properly controlled. The term m1 is a mass density of the dielectric material, ?1 is a permittivity of the dielectric material, m2 is a mass density of the dielectric deposit, and ?2 is a permittivity of the dielectric deposit.Type: GrantFiled: June 28, 2007Date of Patent: November 8, 2011Assignee: Renesas Electronics CorporationInventors: Yousuke Itagaki, Natsuko Ito, Fumihiko Uesugi
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Patent number: 7974067Abstract: In a plasma processing apparatus having an electrostatic chuck for holding a semiconductor wafer by an electrostatic adsorption force and a DC power supply for applying an electrostatic adsorption voltage to the electrostatic chuck, abnormal discharge in plasma is suppressed by providing the apparatus with a signal detector that detects a foresee signal that foresees occurrence of abnormal discharge in plasma, and a controller that controls ESC leakage current based upon the foresee signal. If the foresee signal is outside a prescribed range, control is exercised so as to reduce the absolute value of the electrostatic adsorption voltage, thereby suppressing the occurrence of an abnormal discharge.Type: GrantFiled: September 1, 2006Date of Patent: July 5, 2011Assignee: Renesas Electronics CorporationInventors: Natsuko Ito, Mitsuo Yasaka, Fumihiko Uesugi, Yousuke Itagaki
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Patent number: 7385195Abstract: A system and method is disclosed for obtaining information regarding one or more contact and/or via holes on a semiconductor wafer. In one embodiment, the method obtains information regarding one or more holes (for example, via or contact) that are disposed in a semiconductor wafer or disposed in a layer which is disposed on or above the semiconductor wafer. The method of this embodiment comprises irradiating the one or more holes with an electron beam; and determining information relating to a bottom diameter or a bottom circumference of the one or more holes using data which is representative of an amount of substrate current which is generated in response to irradiating the one or more holes with an electron beam.Type: GrantFiled: August 5, 2005Date of Patent: June 10, 2008Assignee: Topcon CorporationInventors: Keizo Yamada, Yousuke Itagaki, Takeo Ushiki, Tohru Tsujide
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Publication number: 20080041306Abstract: An apparatus includes a housing defining a chamber in which an electric field is generated, and an internal member provided in the chamber. At least one part of the internal member is formed of a dielectric material. A process is executed in the chamber so that a dielectric deposit is formed on the at least one part of the internal member. An m1(d?1/dm1) value of the dielectric material and ?n m2(d?2/dm2) value of the dielectric deposit are set so that production of particles from the deposit is properly controlled. The term m1 is a mass density of the dielectric material, ?1 is a permittivity of the dielectric material, m2 is a mass density of the dielectric deposit, and ?2 is a permittivity of the dielectric deposit.Type: ApplicationFiled: June 28, 2007Publication date: February 21, 2008Applicant: NEC ELECTRONICS CORPORATIONInventors: Yousuke ITAGAKI, Natsuko Ito, Fumihiko Uesugi
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Patent number: 7321805Abstract: A production managing system for semiconductor devices includes, in a semiconductor producing center C, production devices 11a-11c for producing semiconductor devices, in-line measuring devices 12a-12c for measuring data of a lot, a database 2 storing data of production methods, the measured data, the specifications of the process steps corresponding to the measured data, the estimated yield, the data of lot input date and hour, the data of the scheduled date on which the process step is performed, the data of actual date of completion in every step and the data of the scheduled date of completion of the semiconductor devices of every lot, correspondingly to a lot number data of the semiconductor devices (chips) and a server 1 including an estimated yield operating unit 1a for calculating the estimated yield, which is a final yield, on the basis of the specifications and the measured data, and a production managing unit 1b for performing a production management of semiconductor devices ordered by a user on thType: GrantFiled: December 6, 2004Date of Patent: January 22, 2008Assignee: Fab Solutions, Inc.Inventors: Keizo Yamada, Yousuke Itagaki, Takeo Ushiki, Tohru Tsujide
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Publication number: 20070058322Abstract: In a plasma processing apparatus having an electrostatic chuck for holding a semiconductor wafer by an electrostatic adsorption force and a DC power supply for applying an electrostatic adsorption voltage to the electrostatic chuck, abnormal discharge in plasma is suppressed by providing the apparatus with a signal detector that detects a foresee signal that foresees occurrence of abnormal discharge in plasma, and a controller that controls ESC leakage current based upon the foresee signal. If the foresee signal is outside a prescribed range, control is exercised so as to reduce the absolute value of the electrostatic adsorption voltage, thereby suppressing the occurrence of an abnormal discharge.Type: ApplicationFiled: September 1, 2006Publication date: March 15, 2007Inventors: Natsuko Ito, Mitsuo Yasaka, Fumihiko Uesugi, Yousuke Itagaki
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Publication number: 20060202119Abstract: A system and method is disclosed for obtaining information regarding one or more contact and/or via holes on a semiconductor wafer. In one embodiment, the method obtains information regarding one or more holes (for example, via or contact) that are disposed in a semiconductor wafer or disposed in a layer which is disposed on or above the semiconductor wafer. The method of this embodiment comprises irradiating the one or more holes with an electron beam; and determining information relating to a bottom diameter or a bottom circumference of the one or more holes using data which is representative of an amount of substrate current which is generated in response to irradiating the one or more holes with an electron beam.Type: ApplicationFiled: August 5, 2005Publication date: September 14, 2006Inventors: Keizo Yamada, Yousuke Itagaki, Takeo Ushiki, Tohru Tsujide
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Patent number: 7002361Abstract: An apparatus for measuring the thickness of thin-film cause electron beams of first and second energies to strike thin-film to be measured that is formed on a silicon substrate, and measures the first substrate current value of current flowing in the substrate when it is struck by an electron beam of a first energy and the second substrate current value of current flowing in the substrate when it is struck by an electron beam of a second energy. The thin-film measuring apparatus obtains reference data indicating a relationship between the film thickness and a reference function having as variables the substrate current for the case of an electron beam of the first energy striking a standard sample and the substrate current for the case of an electron beam of the second energy striking the standard sample, and calculates the thickness of the thin-film under measurement based on the first and second substrate current values, giving consideration to the reference data.Type: GrantFiled: December 6, 2004Date of Patent: February 21, 2006Assignee: Fab Solutions, Inc.Inventors: Keizo Yamada, Yousuke Itagaki, Takeo Ushiki
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Patent number: 6975125Abstract: In one aspect, the present invention is a system and method for obtaining information regarding one or more contact holes and/or vias on a semiconductor wafer. In this regard, in one embodiment, the system comprises an electron gun to irradiate an electron beam, having a variable acceleration voltage, on the one or more contact holes and/or vias. The system further includes a current measuring device, coupled to the semiconductor wafer, may measure a compensation current, wherein the compensation current is generated in response to the electron beam irradiated at a plurality of acceleration voltages on the one or more contact holes. The system also includes a data processor, coupled to the current measuring device, to determine information relating to the one or more contact holes and/or vias using the compensation current measured for the plurality of acceleration voltages of the electron beam.Type: GrantFiled: May 10, 2004Date of Patent: December 13, 2005Assignee: Fab Solutions, Inc.Inventors: Keizo Yamada, Yousuke Itagaki, Takeo Ushiki, Tohru Tsujide
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Patent number: 6946857Abstract: In one aspect, the present invention is a system and method for obtaining information regarding one or more contact holes and/or vias on a semiconductor wafer. In this regard, in one embodiment, the system comprises an electron gun to irradiate an electron beam on the one or more contact holes and/or vias wherein the electron beam includes a cross-section which is greater than the one or more contact holes. The system further includes a current measuring device, coupled to the semiconductor wafer, may measure a compensation current, wherein the compensation current is generated in response to the electron beam irradiated on the one or more contact holes. The system also includes a data processor, coupled to the current measuring device, to determine information relating to the one or more contact holes and/or vias using the compensation current.Type: GrantFiled: June 15, 2004Date of Patent: September 20, 2005Assignee: Fab Solutions, Inc.Inventors: Keizo Yamada, Yousuke Itagaki, Takeo Ushiki, Tohru Tsujide
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Publication number: 20050116726Abstract: An apparatus for measuring the thickness of thin-film cause electron beams of first and second energies to strike thin-film to be measured that is formed on a silicon substrate, and measures the first substrate current value of current flowing in the substrate when it is struck by an electron beam of a first energy and the second substrate current value of current flowing in the substrate when it is struck by an electron beam of a second energy. The thin-film measuring apparatus obtains reference data indicating a relationship between the film thickness and a reference function having as variables the substrate current for the case of an electron beam of the first energy striking a standard sample and the substrate current for the case of an electron beam of the second energy striking the standard sample, and calculates the thickness of the thin-film under measurement based on the first and second substrate current values, giving consideration to the reference data.Type: ApplicationFiled: December 6, 2004Publication date: June 2, 2005Inventors: Keizo Yamada, Yousuke Itagaki, Takeo Ushiki
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Publication number: 20050106803Abstract: A production managing system for semiconductor devices includes, in a semiconductor producing center C, production devices 11a-11c for producing semiconductor devices, in-line measuring devices 12a-12c for measuring data of a lot, a database 2 storing data of production methods, the measured data, the specifications of the process steps corresponding to the measured data, the estimated yield, the data of lot input date and hour, the data of the scheduled date on which the process step is performed, the data of actual date of completion in every step and the data of the scheduled date of completion of the semiconductor devices of every lot, correspondingly to a lot number data of the semiconductor devices (chips) and a server 1 including an estimated yield operating unit 1a for calculating the estimated yield, which is a final yield, on the basis of the specifications and the measured data, and a production managing unit 1b for performing a production management of semiconductor devices ordered by a user on thType: ApplicationFiled: December 6, 2004Publication date: May 19, 2005Inventors: Keizo Yamada, Yousuke Itagaki, Takeo Ushiki, Tohru Tsujide
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Patent number: 6850079Abstract: An apparatus for measuring the thickness of thin-film cause electron beams of first and second energies to strike thin-film to be measured that is formed on a silicon substrate, and measures the first substrate current value of current flowing in the substrate when it is struck by an electron beam of a first energy and the second substrate current value of current flowing in the substrate when it is struck by an electron beam of a second energy. The thin-film measuring apparatus obtains reference data indicating a relationship between the film thickness and a reference function having as variables the substrate current for the case of an electron beam of the first energy striking a standard sample and the substrate current for the case of an electron beam of the second energy striking the standard sample, and calculates the thickness of the thin-film under measurement based on the first and second substrate current values, giving consideration to the reference data.Type: GrantFiled: January 15, 2003Date of Patent: February 1, 2005Assignee: Fab Solutions, Inc.Inventors: Keizo Yamada, Yousuke Itagaki, Takeo Ushiki
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Patent number: 6842663Abstract: A production managing system for semiconductor devices includes, in a semiconductor producing center C, production devices 11a-11c for producing semiconductor devices, in-line measuring devices 12a-12c for measuring data of a lot, a database 2 storing data of production methods, the measured data, the specifications of the process steps corresponding to the measured data, the estimated yield, the data of lot input date and hour, the data of the scheduled date on which the process step is performed, the data of actual date of completion in every step and the data of the scheduled date of completion of the semiconductor devices of every lot, correspondingly to a lot number data of the semiconductor devices (chips) and a server 1 including an estimated yield operating unit 1a for calculating the estimated yield, which is a final yield, on the basis of the specifications and the measured data, and a production managing unit 1b for performing a production management of semiconductor devices ordered by a user on thType: GrantFiled: March 1, 2004Date of Patent: January 11, 2005Assignee: Fab Solutions, Inc.Inventors: Keizo Yamada, Yousuke Itagaki, Takeo Ushiki, Tohru Tsujide
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Patent number: 6837936Abstract: The semiconductor manufacturing device according to the present invention having a mechanical drive part which is moved in a vacuum device while holding a substrate includes at least one discharge port for introducing an inert gas into the vacuum device, and a flow rate control part for controlling the inert gas which is discharged into the vacuum device from the discharge port at a constant flow rate.Type: GrantFiled: February 21, 2002Date of Patent: January 4, 2005Assignee: Fab Solutions, Inc.Inventors: Takeo Ushiki, Keizo Yamada, Yousuke Itagaki
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Publication number: 20040239347Abstract: In one aspect, the present invention is a system and method for obtaining information regarding one or more contact holes and/or vias on a semiconductor wafer. In this regard, in one embodiment, the system comprises an electron gun to irradiate an electron beam on the one or more contact holes and/or vias wherein the electron beam includes a cross-section which is greater than the one or more contact holes. The system further includes a current measuring device, coupled to the semiconductor wafer, may measure a compensation current, wherein the compensation current is generated in response to the electron beam irradiated on the one or more contact holes. The system also includes a data processor, coupled to the current measuring device, to determine information relating to the one or more contact holes and/or vias using the compensation current.Type: ApplicationFiled: June 15, 2004Publication date: December 2, 2004Inventors: Keizo Yamada, Yousuke Itagaki, Takeo Ushiki, Tohru Tsujide
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Publication number: 20040207415Abstract: In one aspect, the present invention is a system and method for obtaining information regarding one or more contact holes and/or vias on a semiconductor wafer. In this regard, in one embodiment, the system comprises an electron gun to irradiate an electron beam, having a variable acceleration voltage, on the one or more contact holes and/or vias. The system further includes a current measuring device, coupled to the semiconductor wafer, may measure a compensation current, wherein the compensation current is generated in response to the electron beam irradiated at a plurality of acceleration voltages on the one or more contact holes. The system also includes a data processor, coupled to the current measuring device, to determine information relating to the one or more contact holes and/or vias using the compensation current measured for the plurality of acceleration voltages of the electron beam.Type: ApplicationFiled: May 10, 2004Publication date: October 21, 2004Inventors: Keizo Yamada, Yousuke Itagaki, Takeo Ushiki, Tohru Tsujide
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Publication number: 20040167656Abstract: A production managing system for semiconductor devices includes, in a semiconductor producing center C, production devices 11a-11c for producing semiconductor devices, in-line measuring devices 12a-12c for measuring data of a lot, a database 2 storing data of production methods, the measured data, the specifications of the process steps corresponding to the measured data, the estimated yield, the data of lot input date and hour, the data of the scheduled date on which the process step is performed, the data of actual date of completion in every step and the data of the scheduled date of completion of the semiconductor devices of every lot, correspondingly to a lot number data of the semiconductor devices (chips) and a server 1 including an estimated yield operating unit la for calculating the estimated yield, which is a final yield, on the basis of the specifications and the measured data, and a production managing unit 1b for performing a production management of semiconductor devices ordered by a user on thType: ApplicationFiled: March 1, 2004Publication date: August 26, 2004Inventors: Keizo Yamada, Yousuke Itagaki, Takeo Ushiki, Tohru Tsujide
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Patent number: 6768324Abstract: Current produced in a sample 5 by irradiating the sample with parallel electron beam 2 is measured by an ammeter 9. The measurement is repeated while changing acceleration voltage of electron beam 2. An information related to a structure of the sample 5 in a depth direction thereof is obtained by a data processor 10, on the basis or a difference in transmittivity of electron beam 2 into the sample 5 due to the difference of acceleration voltage.Type: GrantFiled: November 1, 2000Date of Patent: July 27, 2004Assignee: Fab Solutions, Inc.Inventors: Keizo Yamada, Tohru Tsujide, Yousuke Itagaki, Takeo Ushiki
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Patent number: 6711453Abstract: A production managing system for semiconductor devices includes, in a semiconductor producing center C, production devices 11a-11c for producing semiconductor devices, in-line measuring devices 12a-12c for measuring data of a lot, a database 2 storing data of production methods, the measured data, the specifications of the process steps corresponding to the measured data, the estimated yield, the data of lot input date and hour, the data of the scheduled date on which the process step is performed, the data of actual date of completion in every step and the data of the scheduled date of completion of the semiconductor devices of every lot, correspondingly to a lot number data of the semiconductor devices (chips) and a server 1 including an estimated yield operating unit 1a for calculating the estimated yield, which is a final yield, on the basis of the specifications and the measured data, and a production managing unit 1b for performing a production management of semiconductor devices ordered by a user on thType: GrantFiled: February 26, 2002Date of Patent: March 23, 2004Assignee: FAB Solutions, Inc.Inventors: Keizo Yamada, Yousuke Itagaki, Takeo Ushiki, Tohru Tsujide