Abstract: Provided are an anion exchange resin being capable of producing an electrolyte membrane, a binder for forming an electrode catalyst layer and a battery electrode catalyst layer, which have improved electrical properties and chemical properties. For example, used is an anion exchange resin which has a hydrophobic unit being composed of bisphenol AF residues repeated via carbon-carbon bond and a hydrophilic unit being composed of hydrophilic groups repeated via carbon-carbon bond, in which the hydrophilic group is formed by connecting an anion exchange group to a fluorene backbone via a divalent saturated hydrocarbon group, and in which the hydrophobic unit and the hydrophilic unit are connected via carbon-carbon bond.

Abstract: Provided are an anion exchange resin being capable of producing an electrolyte membrane, a binder for forming an electrode catalyst layer and a battery electrode catalyst layer, which have improved electrical properties and chemical properties. For example, used is an anion exchange resin which has a hydrophobic unit being composed of bisphenol AF residues repeated via carbon-carbon bond and a hydrophilic unit being composed of hydrophilic groups repeated via carbon-carbon bond, in which the hydrophilic group is formed by connecting an anion exchange group to a fluorene backbone via a divalent saturated hydrocarbon group, and in which the hydrophobic unit and the hydrophilic unit are connected via carbon-carbon bond.

Abstract: A method for forming a resist under layer film includes providing a composition for forming a resist under layer film on a substrate which is to be processed. The composition includes a solvent and a calixarene compound or a derivative of the calixarene compound. The composition is set under an oxidizing atmosphere with an oxygen content of 1% or more by volume to form a resist under layer film.

Abstract: A resist under layer film-forming composition comprises (A) an aminated fullerene having at least one amino group bonded to a fullerene skeleton, and (B) a solvent. The composition exhibits excellent etching resistance, causes an under layer film pattern to bend only with difficulty in a dry etching process, and can transfer a resist pattern faithfully onto a substrate to be processed with high reproducibility.

Abstract: The invention described herein relates to a polyarylene copolymer comprising a structural unit represented by formula (1?): where the structural variables are defined herein. The invention also relates to a solid polymer electrolyte, a proton conductive membrane and A proton conductive membrane for direct methanol fuel cell which contains the polyarylene copolymer.

Abstract: A method for forming a resist under layer film includes providing a composition for forming a resist under layer film on a substrate which is to be processed. The composition includes a solvent and a calixarene compound or a derivative of the calixarene compound. The composition is set under an oxidizing atmosphere with an oxygen content of 1% or more by volume to form a resist under layer film.

Abstract: A composition for forming a resist lower layer film, which contains (A) a resin, (B) a butyl ether group-containing crosslinking agent and (C) a solvent.

Abstract: This invention provides a method for resist under layer film formation, which can form a resist under layer film which can function as an anti-reflection film, is excellent in pattern transfer properties and etching resistance, and does not cause bending of a pattern even in the transfer of a fined pattern, and a composition for the resist under layer film for use in the method, and a method for pattern formation. The method for resist under layer film formation comprises the steps of coating a composition for resist under layer film formation (for example, a composition comprising a compound having a phenolic hydroxyl group, a solvent, and an accelerator) onto a substrate to be processed, and treating the formed coating film under an oxidizing atmosphere having an oxygen concentration of not less than 1% by volume and a temperature of 300° C. or higher to form a resist under layer film.

Abstract: A composition for forming a resist lower layer film, which contains (A) a resin, (B) a butyl ether group-containing crosslinking agent and (C) a solvent.

Abstract: Sulfonated polymers have excellent processability and methanol resistance.

Abstract: A composition for forming a lower layer film comprises a polymer (A) having a naphthalene derivative structural unit shown by the following formula (1), wherein R1 represents a hydroxyl group and the like, X represents a substitutable alkylene group having 1 to 20 carbon atoms and the like, n represents 0 to 6, m represents 1 to 8, and n+m represents an integer from 1 to 8, provided that two or more R1s may be the same or different and two or more Xs may be the same or different.

Abstract: A resist under layer film-forming composition comprises (A) an aminated fullerene having at least one amino group bonded to a fullerene skeleton, and (B) a solvent. The composition exhibits excellent etching resistance, causes an under layer film pattern to bend only with difficulty in a dry etching process, and can transfer a resist pattern faithfully onto a substrate to be processed with high reproducibility.

Abstract: This invention provides a method for resist under layer film formation, which can form a resist under layer film which can function as an anti-reflection film, is excellent in pattern transfer properties and etching resistance, and does not cause bending of a pattern even in the transfer of a fined pattern, and a composition for the resist under layer film for use in the method, and a method for pattern formation. The method for resist under layer film formation comprises the steps of coating a composition for resist under layer film formation (for example, a composition comprising a compound having a phenolic hydroxyl group, a solvent, and an accelerator) onto a substrate to be processed, and treating the formed coating film under an oxidizing atmosphere having an oxygen concentration of not less than 1% by volume and a temperature of 300° C. or higher to form a resist under layer film.

Abstract: Sulfonated polyarylenes have excellent processability and methanol resistance. The polyarylene includes a structural unit (S) represented by Formula (2-2) below and a structural unit (T) represented by Formula (2-3) below, the structural unit (S) accounting for a proportion “s” of 95 to 50 mol %, the structural unit (T) accounting for a proportion “t” of 5 to 50 mol % (“s”+“t”=100 mol %): wherein each A independently represents a divalent linking group represented by —CO— or —SO2—; and R1 to R4 each independently represent a hydrogen atom, a fluorine atom, an alkyl group or an aryl group.

Abstract: A composition for forming a lower layer film comprises a polymer (A) having a naphthalene derivative structural unit shown by the following formula (1), wherein R1 represents a hydroxyl group and the like, X represents a substitutable alkylene group having 1 to 20 carbon atoms and the like, n represents 0 to 6, m represents 1 to 8, and n+m represents an integer from 1 to 8, provided that two or more R1s may be the same or different and two or more Xs may be the same or different.

Abstract: The present invention provides a sulfonic group-containing polyarylene block copolymer superior to the perfluoroalkylsulfonic acid polymers in cost, conductive properties and proccessability, a process for producing the copolymer, a solid polymer electrolyte and a proton conductive membrane. The sulfonic group-containing polyarylene block copolymer includes a polymer segment with an ion conductive component represented by the formula (A) and at least one polymer segment without an ion conductive component represented by the formulae (B-1), (B-3) and the like and containing an aromatic ring bonded at the meta-positions or ortho-positions: wherein X is a single bond, —CO—, —SO2— or the like; W is a single bond, —CO—, —SO2— or the like; Q is a single bond, —O—, —S— or the like; J is a single bond, —CO—, —SO2— or the like; and R1 to R24 are each a hydrogen atom, a fluorine atom, an alkyl group or the like.

Abstract: Disclosed is an aromatic sulfonic acid ester derivative represented by the formula (1); in the formula, X is an atom or a group selected from a halogen atom excluding fluorine, —OSO3CH3 and —OSO3CF3, A is a divalent electron attractive group, B is a divalent electron donating group or a direct bonding, Ra is a hydrocarbon group of 1 to 20 carbon atoms, Ar is an aromatic group having a substituent of —SO3Rb (wherein Rb is a hydrocarbon group of 1 to 20 carbon atoms), m is an integer of 0 to 10, n is an integer of 0 to 10 and k is an integer of 1 to 4. Also disclosed is a process for producing a polyarylene having a sulfonic acid group, which process comprises the steps of coupling polymerization of an aromatic compound containing the derivative of the formula (1), to prepare a polyarylene and hydrolysis of the polyarylene, and which process has high safety and is easily capable of controlling the amount of sulfonoc acid group introduced into a polymer and the introducing position thereof.

Abstract: The present invention provides a sulfonic group-containing polyarylene block copolymer superior to the perfluoroalkylsulfonic acid polymers in cost, conductive properties and processability, a process for producing the copolymer, a solid polymer electrolyte and a proton conductive membrane. The sulfonic group-containing polyarylene block copolymer includes a polymer segment with an ion conductive component represented by the formula (A) and at least one polymer segment without an ion conductive component represented by the formulae (B-1), (B-3) and the like and containing an aromatic ring bonded at the meta-positions or ortho-positions: wherein X is a single bond, —CO—, —SO2— or the like; W is a single bond, —CO—, —SO2— or the like; Q is a single bond, —O—, —S— or the like; J is a single bond, —CO—, —SO2— or the like; and R1 to R24 are each a hydrogen atom, a fluorine atom, an alkyl group or the like.

Abstract: Disclosed is an aromatic sulfonic acid ester derivative represented by the formula (1); 1