Patents by Inventor Yozo Ikedo
Yozo Ikedo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11639548Abstract: There is provided a film-forming material mixed-gas forming device including: a film-forming material supply unit that supplies a film-forming material in liquid form at a predetermined flow rate; a carrier gas supply unit that supplies a carrier gas at a predetermined flow rate; a main vaporization unit that vaporizes the film-forming material by heating the film-forming material supplied from the film-forming material supply unit and the carrier gas supplied from the carrier gas supply unit; and an auxiliary vaporization unit having a porous vaporization member which captures carried over droplets of the film-forming material in gas flowing out from the main vaporization unit and vaporizes the captured droplets of the film-forming material.Type: GrantFiled: August 18, 2020Date of Patent: May 2, 2023Assignee: ASM IP Holding B.V.Inventors: Hua Feng Wang, Yozo Ikedo
-
Publication number: 20210054504Abstract: There is provided a film-forming material mixed-gas forming device including: a film-forming material supply unit that supplies a film-forming material in liquid form at a predetermined flow rate; a carrier gas supply unit that supplies a carrier gas at a predetermined flow rate; a main vaporization unit that vaporizes the film-forming material by heating the film-forming material supplied from the film-forming material supply unit and the carrier gas supplied from the carrier gas supply unit; and an auxiliary vaporization unit having a porous vaporization member which captures carried over droplets of the film-forming material in gas flowing out from the main vaporization unit and vaporizes the captured droplets of the film-forming material.Type: ApplicationFiled: August 18, 2020Publication date: February 25, 2021Inventors: Hua Feng Wang, Yozo Ikedo
-
Patent number: 10526704Abstract: A film forming apparatus includes a chamber having a processing space, a stage provided in the processing space and having a substrate placed thereon, a diffusion tube connected to the chamber so that a diffusion space communicating with the processing space is provided right above the stage, and a gas supply tube extending from the outside of the diffusion tube into the diffusion space through a portion of the diffusion tube and having a gas supply orifice in a portion thereof inside of the diffusion space. The gas supply orifice is formed so as to eject a material gas in a direction away from the stage.Type: GrantFiled: January 30, 2015Date of Patent: January 7, 2020Assignee: ASM IP HOLDING B.V.Inventors: Yuya Nonaka, Yozo Ikedo
-
Patent number: 10435789Abstract: A substrate treatment apparatus includes a lower electrode, an upper electrode, a first AC power supply that is connected to the upper electrode and supplies AC power at a first frequency, a second AC power supply that is connected to the upper electrode and supplies AC power at a second frequency which is lower than the first frequency, an internal electrode provided in the lower electrode, a filter circuit connected to the internal electrode, and a DC power supply connected to the internal electrode via the filter circuit. The filter circuit includes a first filter circuit that becomes low impedance with respect to AC power at the first frequency compared to AC power at the second frequency, and a second filter circuit that becomes low impedance with respect to AC power at the second frequency compared to AC power at the first frequency.Type: GrantFiled: December 6, 2016Date of Patent: October 8, 2019Assignee: ASM IP Holding B.V.Inventors: Naoto Tsuji, Takuya Suguri, Yozo Ikedo
-
Publication number: 20180158709Abstract: A substrate treatment apparatus includes a lower electrode, an upper electrode, a first AC power supply that is connected to the upper electrode and supplies AC power at a first frequency, a second AC power supply that is connected to the upper electrode and supplies AC power at a second frequency which is lower than the first frequency, an internal electrode provided in the lower electrode, a filter circuit connected to the internal electrode, and a DC power supply connected to the internal electrode via the filter circuit. The filter circuit includes a first filter circuit that becomes low impedance with respect to AC power at the first frequency compared to AC power at the second frequency, and a second filter circuit that becomes low impedance with respect to AC power at the second frequency compared to AC power at the first frequency.Type: ApplicationFiled: December 6, 2016Publication date: June 7, 2018Applicant: ASM IP Holding B.V.Inventors: Naoto TSUJI, Takuya SUGURI, Yozo IKEDO
-
Publication number: 20160222513Abstract: A film forming apparatus includes a chamber having a processing space, a stage provided in the processing space and having a substrate placed thereon, a diffusion tube connected to the chamber so that a diffusion space communicating with the processing space is provided right above the stage, and a gas supply tube extending from the outside of the diffusion tube into the diffusion space through a portion of the diffusion tube and having a gas supply orifice in a portion thereof inside of the diffusion space. The gas supply orifice is formed so as to eject a material gas in a direction away from the stage.Type: ApplicationFiled: January 30, 2015Publication date: August 4, 2016Applicant: ASM IP Holding B.V.Inventors: Yuya NONAKA, Yozo IKEDO
-
Patent number: 7691205Abstract: A substrate-supporting device for CVD having a substrate-supporting region includes: a substrate-supporting surface which is a continuous surface defining a reference plane on which a substrate is placed; and multiple dimples having bottom surfaces lower than the reference plane. The respective dimples are isolated from each other by a portion of the substrate-supporting surface.Type: GrantFiled: October 18, 2005Date of Patent: April 6, 2010Assignee: ASM Japan K.K.Inventor: Yozo Ikedo
-
Publication number: 20070089670Abstract: A substrate-supporting device for CVD having a substrate-supporting region includes: a substrate-supporting surface which is a continuous surface defining a reference plane on which a substrate is placed; and multiple dimples having bottom surfaces lower than the reference plane. The respective dimples are isolated from each other by a portion of the substrate-supporting surface.Type: ApplicationFiled: October 18, 2005Publication date: April 26, 2007Applicant: ASM JAPAN K.K.Inventor: Yozo Ikedo
-
Patent number: 7037855Abstract: A method of forming low-dielectric-constant silicon oxide films by capacitive-coupled plasma CVD comprises: introducing a processing gas comprising SiH4 as a silicon source gas, SiF4 as a fluorine source gas, and CO2 as an oxidizing gas to a reaction chamber at a ratio of (SiH4+SiF4)/CO2 in the range of 0.02 to 0.2 and at a total pressure of 250 Pa to 350 Pa; applying first RF power at a frequency of 10 MHz to 30 MHz and second RF power at a frequency of 400 kHz to 500 kHz by overlaying the two RF powers to generate a plasma reaction field within the reaction chamber; and controlling a flow of the respective gases and the respective RF power outputs.Type: GrantFiled: August 31, 2004Date of Patent: May 2, 2006Assignee: ASM Japan K.K.Inventors: Naoto Tsuji, Yozo Ikedo, Ryu Nakano, Shuzo Hebiguchi
-
Publication number: 20060046519Abstract: A method of forming low-dielectric-constant silicon oxide films by capacitive-coupled plasma CVD comprises: introducing a processing gas comprising SiH4 as a silicon source gas, SiF4 as a fluorine source gas, and CO2 as an oxidizing gas to a reaction chamber at a ratio of (SiH4+SiF4)/CO2 in the range of 0.02 to 0.2 and at a total pressure of 250 Pa to 350 Pa; applying first RF power at a frequency of 10 MHz to 30 MHz and second RF power at a frequency of 400 kHz to 500 kHz by overlaying the two RF powers to generate a plasma reaction field within the reaction chamber; and controlling a flow of the respective gases and the respective RF power outputs.Type: ApplicationFiled: August 31, 2004Publication date: March 2, 2006Applicant: ASM JAPAN K.K.Inventors: Naoto Tsuji, Yozo Ikedo, Ryu Nakano, Shuzo Hebiguchi
-
Patent number: D829306Type: GrantFiled: July 6, 2016Date of Patent: September 25, 2018Assignee: ASM IP Holding B.V.Inventors: Yozo Ikedo, Takafumi Hisamitsu
-
Patent number: D864134Type: GrantFiled: October 24, 2018Date of Patent: October 22, 2019Assignee: ASM IP Holding B.V.Inventors: Toshiharu Watarai, Yozo Ikedo, Takuya Suguri