Patents by Inventor Yu-Chia Chen
Yu-Chia Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11985324Abstract: Exemplary video processing methods and apparatuses for encoding or decoding a current block by inter prediction are disclosed. Input data of a current block is received and partitioned into sub-partitions and motion refinement is independently performed on each sub-partition. A reference block for each sub-partition is obtained from one or more reference pictures according to an initial motion vector (MV). A refined MV for each sub-partition is derived by searching around the initial MV with N-pixel refinement. One or more boundary pixels of the reference block for a sub-partition is padded for motion compensation of the sub-partition. A final predictor for the current block is generated by performing motion compensation for each sub-partition according to its refined MV. The current block is then encoded or decoded according to the final predictor.Type: GrantFiled: March 13, 2020Date of Patent: May 14, 2024Assignee: HFI INNOVATION INC.Inventors: Yu-Cheng Lin, Chun-Chia Chen, Chih-Wei Hsu, Ching-Yeh Chen, Tzu-Der Chuang, Yu-Wen Huang
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Patent number: 11983052Abstract: A display device and a bezel thereof are provided. The display device includes a display panel and a bezel. The display panel has a first surface and a second surface. The first surface includes at least one pixel pad section, and the second surface includes at least one circuit pad section. The bezel includes a first surface connecting portion, a second surface connecting portion and at least one conductive wire. The edge of the display panel having the pixel pad section and the circuit pad section is accommodated between the first surface connecting portion and the second surface connecting portion. Each conductive wire has a first end and a second end. The first end is disposed on the first surface connecting portion and the second end is disposed on the second surface connecting portion. The part of the first connecting portion having the first end corresponds to the pixel pad section, and the part of the second connecting portion having the second end corresponds to the circuit pad section.Type: GrantFiled: May 28, 2021Date of Patent: May 14, 2024Assignee: AU OPTRONICS CORPORATIONInventors: Yi-Fan Chen, Che-Chia Chang, Shang-Jie Wu, Yu-Chieh Kuo, Yi-Jung Chen, Yu-Hsun Chiu, Mei-Yi Li, He-Yi Cheng
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Patent number: 11979593Abstract: Method and apparatus for affine CPMV or ALF refinement are mentioned. According to this method, statistical data associated with the affine CPMV or ALF refinement are collected over a picture area. Updated parameters for the affine CPMV refinement or the ALF refinement are then derived based on the statistical data, where a process to derive the updated parameters includes performing multiplication using a reduced-precision multiplier for the statistical data. The reduced-precision multiplier truncates at least one bit of the mantissa part. In another embodiment, the process to derive the updated parameters includes performing reciprocal for the statistical data using a lookup table with (m?k)-bit input by truncating k bits from the m-bit mantissa part, and contents of the lookup table includes m-bit outputs. m and k are positive integers.Type: GrantFiled: April 25, 2022Date of Patent: May 7, 2024Assignee: MEDIATEK INC.Inventors: Shih-Chun Chiu, Tzu-Der Chuang, Ching-Yeh Chen, Chun-Chia Chen, Chih-Wei Hsu, Yu-Wen Huang
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Publication number: 20240147825Abstract: Examples disclosed herein relate to device. The device includes a substrate, a plurality of adjacent pixel-defining layer (PDL structures disposed over the substrate, and a plurality of sub-pixels. The PDL structure have a top surface coupled to adjacent sidewalls of the PDL structure. The plurality of sub-pixels are defined by the PDL structures. Each sub-pixel includes an anode, an organic light emitting diode (OLED), a cathode, and an encapsulation layer. The organic light emitting diode (OLED) material disposed over the anode. The OLED material extends over the top surface of the PDL structure past the adjacent sidewalls. The cathode is disposed over the OLED material. The cathode extends over the top surface of the PDL structure past the adjacent sidewalls. The encapsulation layer is disposed over the cathode. The encapsulation layer has a first sidewall and a second sidewall.Type: ApplicationFiled: October 26, 2022Publication date: May 2, 2024Inventors: Chung-chia CHEN, Yu-Hsin LIN, Ji Young CHOUNG, Jungmin LEE, Wen-Hao WU, Dieter HAAS
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Patent number: 11973985Abstract: Various schemes pertaining to pre-encoding processing of a video stream with motion compensated temporal filtering (MCTF) are described. An apparatus determines a filtering interval for a received raw video stream having pictures in a temporal sequence. The apparatus selects from the pictures a plurality of target pictures based on the filtering interval, as well as a group of reference pictures for each target picture to perform pixel-based MCTF, which generates a corresponding filtered picture for each target picture. The apparatus subsequently transmits the filtered pictures as well as non-target pictures to an encoder for encoding the video stream. Subpictures of natural images and screen content images are separately processed by the apparatus.Type: GrantFiled: August 22, 2022Date of Patent: April 30, 2024Assignee: MediaTek Inc.Inventors: Chih-Yao Chiu, Chun-Chia Chen, Chih-Wei Hsu, Tzu-Der Chuang, Ching-Yeh Chen, Yu-Wen Huang
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Publication number: 20240136344Abstract: A display device includes a substrate, at least one light emitting unit bound on the substrate, a transparency controllable unit disposed on the substrate, and an integrated circuit unit overlapped with the substrate. The integrated circuit unit includes a semiconducting structure and a conductive structure overlapped with the semiconducting structure. The integrated circuit unit is electrically connected to the at least one light emitting unit and the transparency controllable unit.Type: ApplicationFiled: September 17, 2023Publication date: April 25, 2024Applicant: InnoLux CorporationInventors: Jia-Yuan CHEN, Yu-Chia HUANG, Tsung-Han TSAI, Kuan-Feng LEE
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Patent number: 11963985Abstract: The present invention relates to a coral composite extract, a composition including the same and a method of producing the same. The coral composite extract includes at least two briarane-type diterpenoid compounds from corals of Briareum violaceum, B. excavatum and B. stechei, thereby being applied as an effective ingredient of a skin external use composition, a cosmetic composition and a medicinal composition.Type: GrantFiled: July 12, 2023Date of Patent: April 23, 2024Assignee: National Sun Yat-Sen UniversityInventors: Zhi-Hong Wen, Ping-Jyun Sung, Han-Chun Hung, Chun-Hong Chen, Yu-Chia Chang
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Publication number: 20240121995Abstract: Embodiments described herein relate to a sub-pixel. The sub-pixel includes an anode, overhang structures, separation structures, an organic light emitting diode (OLED) material, and a cathode. The anode is defined by adjacent first pixel isolation structures (PIS) and adjacent second PIS. The overhang structures are disposed on the first PIS. The overhang structures include a second structure disposed over the first structure and an intermediate structure disposed between the second structure and the first structure. A bottom surface of the second structure extends laterally past an upper surface of the first structure. The first structure is disposed over the first PIS. Separation structures are disposed over the second PIS. The OLED material is disposed over the anode and an upper surface of the separation structures. The cathode disposed over the OLED material and an upper surface of the separation structures.Type: ApplicationFiled: December 19, 2023Publication date: April 11, 2024Inventors: Jungmin LEE, Chung-chia CHEN, Ji Young CHOUNG, Yu-hsin LIN
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Patent number: 11953400Abstract: A pressure sensing unit is provided. The pressure sensing unit includes a membrane and a pressure sensing pad group. The membrane has a first surface and a second surface. The pressure sensing pad group includes a first pressure sensing pad, a second pressure sensing pad, and a ground pad that are spaced apart from one another. The ground pad and one among the first pressure sensing pad and the second pressure sensing pad are located at the first surface of the membrane, another one among the first pressure sensing pad and the second pressure sensing pad is located at the second surface of the membrane, and an orthographic projection of the ground pad projected onto a reference plane is located between orthographic projections of the first pressure sensing pad and the second pressure sensing pad that are projected onto the reference plane. Therefore, a signal-to-noise ratio can be increased and an erroneous detection can be prevented.Type: GrantFiled: May 2, 2023Date of Patent: April 9, 2024Assignee: PIXART IMAGING INC.Inventors: Che-Chia Hsu, Yu-Han Chen, Chi-Chieh Liao
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Publication number: 20240111210Abstract: A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (A1) or formula (A2): Zr12O8(OH)14(RCO2)18 ??Formula (A1); or Hf6O4(OH)6(RCO2)10 ??Formula (A2). R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6): The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.Type: ApplicationFiled: May 9, 2023Publication date: April 4, 2024Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITYInventors: Jui-Hsiung LIU, Pin-Chia LIAO, Ting-An LIN, Ting-An SHIH, Yu-Fang TSENG, Burn Jeng LIN, Tsai-Sheng GAU, Po-Hsiung CHEN, Po-Wen CHIU
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Publication number: 20240112957Abstract: A fabrication method is disclosed that includes: forming a first metal layer over first and second semiconductor structures; forming a first patterned photolithographic layer with an opening that exposes a portion of the first metal layer over the first semiconductor structure but not to a boundary between semiconductor structures; removing the exposed portion of the first metal layer; forming a second metal layer over the first and second semiconductor structures; forming a second patterned photolithographic layer with an opening that exposes a portion of the second metal layer over the second semiconductor structure but not to the boundary; removing the exposed portion of the first and second metal layers; wherein a barrier structure is generated between the first and second semiconductor structures that includes remaining portions of the first metal layer and a portion of the second metal layer overlying the remaining portions of the first metal layer.Type: ApplicationFiled: January 12, 2023Publication date: April 4, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Xuan Wang, Cheng-Chun Tseng, Yi-Chun Chen, Yu-Hsien Lin, Ryan Chia-Jen Chen
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Publication number: 20240112912Abstract: A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (Al) or formula (A2): Zr12O8(OH)14(RCO2)18??Formula (A1); or Hf6O4(OH)6(RCO2)10??Formula (A2). R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6): The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.Type: ApplicationFiled: July 28, 2023Publication date: April 4, 2024Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TSING HUA UNIVERSITYInventors: Jui-Hsiung LIU, Yu-Fang TSENG, Pin-Chia LIAO, Burn Jeng LIN, Tsai-Sheng GAU, Po-Hsiung CHEN, Po-Wen CHIU
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Publication number: 20240114727Abstract: Embodiments described herein relate to a sub-pixel. The sub-pixel includes an anode, overhang structures, separation structures, an organic light emitting diode (OLED) material, and a cathode. The anode is defined by adjacent first pixel isolation structures (PIS) and adjacent second PIS. The overhang structures are disposed on the first PIS. The overhang structures include a second structure disposed over the first structure and an intermediate structure disposed between the second structure and the first structure. A bottom surface of the second structure extends laterally past an upper surface of the first structure. The first structure is disposed over the first PIS. Separation structures are disposed over the second PIS. The OLED material is disposed over the anode and an upper surface of the separation structures. The cathode disposed over the OLED material and an upper surface of the separation structures.Type: ApplicationFiled: December 5, 2023Publication date: April 4, 2024Inventors: Jungmin LEE, Chung-chia CHEN, Ji Young CHOUNG, Yu-hsin LIN
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Publication number: 20240107819Abstract: Embodiments described herein relate to a sub-pixel. The sub-pixel includes an anode, overhang structures, separation structures, an organic light emitting diode (OLED) material, and a cathode. The anode is defined by adjacent first pixel isolation structures (PIS) and adjacent second PIS. The overhang structures are disposed on the first PIS. The overhang structures include a second structure disposed over the first structure and an intermediate structure disposed between the second structure and the first structure. A bottom surface of the second structure extends laterally past an upper surface of the first structure. The first structure is disposed over the first PIS. Separation structures are disposed over the second PIS. The OLED material is disposed over the anode and an upper surface of the separation structures. The cathode disposed over the OLED material and an upper surface of the separation structures.Type: ApplicationFiled: December 5, 2023Publication date: March 28, 2024Inventors: Jungmin LEE, Chung-chia CHEN, Ji Young CHOUNG, Yu-hsin LIN
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Patent number: 11942532Abstract: A method includes fabricating a semiconductor device, wherein the method includes depositing a coating layer on a first region and a second region under a loading condition such that a height of the coating layer in the first region is greater than a height of the coating layer in the second region. The method also includes applying processing gas to the coating layer to remove an upper portion of the coating layer such that a height of the coating layer in the first region is a same as a height of the coating layer in the second region.Type: GrantFiled: August 30, 2021Date of Patent: March 26, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chao-Hsuan Chen, Ming-Chia Tai, Yu-Hsien Lin, Shun-Hui Yang, Ryan Chia-Jen Chen
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Patent number: 11942750Abstract: A laser inspection system is provided. A laser source emits a laser with a first spectrum and the laser is transmitted by a first optical fiber. A gain optical fiber doped with special ions is connected to the first optical fiber, and a light detector is provided around the gain optical fiber. When the laser with the first spectrum passes through the gain optical fiber, the gain optical fiber absorbs part of the energy level of the laser with the first spectrum, so that the laser with the first spectrum is converted to generate light with a second spectrum based on the frequency conversion phenomenon. The light detector detects the intensity of the light with the second spectrum, so that the power of the laser source can be obtained.Type: GrantFiled: November 23, 2020Date of Patent: March 26, 2024Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yi-Chi Lee, Hsin-Chia Su, Shih-Ting Lin, Yu-Cheng Song, Fu-Shun Ho, Chih-Chun Chen
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Publication number: 20240096806Abstract: A method for manufacturing a semiconductor structure is provided. A substrate including a fin structure is received, provided or formed. A sacrificial gate layer is formed over the fin structure and a source/drain structure is formed adjacent to the sacrificial gate layer, wherein the sacrificial gate layer is surrounded by a dielectric structure. The sacrificial gate layer is removed, wherein a recess is defined by the dielectric structure. A work function layer is formed in the recess, wherein the work function layer includes an overhang portion at an opening of the recess. A thickness of the work function layer is reduced. A glue layer is formed over the work function layer. A semiconductor structure thereof is also provided.Type: ApplicationFiled: January 6, 2023Publication date: March 21, 2024Inventors: CHAO-HSUAN CHEN, WEI CHEN HUNG, LI-WEI YIN, YU-HSIEN LIN, YIH-ANN LIN, RYAN CHIA-JEN CHEN
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Publication number: 20240079493Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a gate structure disposed on the substrate. The semiconductor device also includes a source region and a drain region disposed within the substrate. The substrate includes a drift region laterally extending between the source region and the drain region. The semiconductor device further includes a first stressor layer disposed over the drift region of the substrate. The first stressor layer is configured to apply a first stress to the drift region of the substrate. In addition, the semiconductor device includes a second stressor layer disposed on the first stressor layer. The second stressor layer is configured to apply a second stress to the drift region of the substrate, and the first stress is opposite to the second stress.Type: ApplicationFiled: September 1, 2022Publication date: March 7, 2024Inventors: GUAN-QI CHEN, CHEN CHI HSIAO, KUN-TSANG CHUANG, FANG YI LIAO, YU SHAN HUNG, CHUN-CHIA CHEN, YU-SHAN HUANG, TUNG-I LIN
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Patent number: 11915064Abstract: The disclosure relates to processing application programming interface (API) requests. Embodiments include receiving, at an API wrapper, from a first caller, a first call to an API and sending the first call to the API. Embodiments include receiving, by the API wrapper, from one or more second callers, a second one or more calls to the API prior to receiving a response from the API to the first call. Embodiments include receiving, by the API wrapper, the response from the API to the first call and responding to the first call from the first caller with the response from the API to the first call. Embodiments include responding, by the API wrapper, to the second one or more calls from the one or more second callers with the response from the API to the first call without sending the second one or more calls to the API.Type: GrantFiled: February 17, 2022Date of Patent: February 27, 2024Assignee: VMware, Inc.Inventors: Yu Wu, Jin Feng, Sifan Liu, Zhiliang Zhang, Kai-chia Chen
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Publication number: 20230345120Abstract: A dual purpose camera is provided. The dual purpose camera has a doccam mode and a webcam mode. The dual purpose camera includes a base, a supporting member, and a camera. The supporting member is detachably or rotatably coupled to the base. The camera is rotatably or detachably coupled to the supporting member. The camera rotates with respect to a reference plane of the dual purpose camera between a first position and a second position. When it is detected that the camera is attached to the base and the camera rotates from the first position to the second position, the camera automatically outputs a 180 degree rotated image.Type: ApplicationFiled: January 12, 2023Publication date: October 26, 2023Applicant: Qisda CorporationInventors: Chia-Hsin OU, Wen-Ming WU, Yu-Shuo FAN, Shu-Fen KE, Yu-Chia CHEN