Patents by Inventor Yu-Chiang Chao
Yu-Chiang Chao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11522151Abstract: An organic light-emitting device includes a first electrode layer, an emission layer, an electron transporting layer, an electron injection layer, and a second electrode layer sequentially formed from bottom to top. The emission layer includes a guest light-emitting material, a first phenyl phosphine oxide derivative and a hole transporting material. The electron transporting layer includes a second phenyl phosphine oxide derivative and a third phenyl phosphine oxide derivative different from the second phenyl phosphine oxide derivative. One of the second phenyl phosphine oxide derivative and the third phenyl phosphine oxide derivative is identical to the first phenyl phosphine oxide derivative. The electron injection layer includes an alkaline metal compound.Type: GrantFiled: January 29, 2019Date of Patent: December 6, 2022Assignee: NATIONAL CHIAO TUNG UNIVERSITYInventors: Hsin-Fei Meng, Sheng-Fu Horng, Yu-Chiang Chao, Chih-Yu Chang, Yu-Fan Chang, Mei-Peng Liou, Qian-Wei Lin, Hsiao-Tso Su, Chiung-Wen Chang
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Publication number: 20190355921Abstract: An organic light-emitting device includes a first electrode layer, an emission layer, an electron transporting layer, an electron injection layer, and a second electrode layer sequentially formed from bottom to top. The emission layer includes a guest light-emitting material, a first phenyl phosphine oxide derivative and a hole transporting material. The electron transporting layer includes a second phenyl phosphine oxide derivative and a third phenyl phosphine oxide derivative different from the second phenyl phosphine oxide derivative. One of the second phenyl phosphine oxide derivative and the third phenyl phosphine oxide derivative is identical to the first phenyl phosphine oxide derivative. The electron injection layer includes an alkaline metal compound.Type: ApplicationFiled: January 29, 2019Publication date: November 21, 2019Inventors: Hsin-Fei MENG, Sheng-Fu HORNG, Yu-Chiang CHAO, Chih-Yu CHANG, Yu-Fan CHANG, Mei-Peng LIOU, Qian-Wei LIN, Hsiao-Tso SU, Chiung -Wen CHANG
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Patent number: 9362453Abstract: The present invention relates generally to a near-infrared light-emitting diode (LED) and the method for manufacturing the same. When preparing the light-emitting layer of the near-infrared LED according to the present invention, the CsSnXX?2 solution is coated on the substrate having the hole transport layer. Then, by a drying process, the solvent is moved away and the CsSnXX?2 solution is solidified, crystallized to CsSnXX?2 in the perovskite structure, which is used as the light-emitting layer of the near-infrared LED and emits near infrared. X and X? are identical or different halogen elements. In addition, according to the present invention, lead can be used to replace a part of tin. By adjusting the ratio of lead and tin or adopting different combination of halogen elements, the wavelength of the generated near infrared varies.Type: GrantFiled: October 22, 2014Date of Patent: June 7, 2016Assignee: Chung Yuan Christian UniversityInventors: Yu-Chiang Chao, Yu-Chi Huang
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Patent number: 9331294Abstract: A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.Type: GrantFiled: March 31, 2014Date of Patent: May 3, 2016Assignee: National Chiao Tung UniversityInventors: Hsiao-Wen Zan, Hsin-Fei Meng, Wu-Wei Tsai, Yu-Chiang Chao
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Publication number: 20160056337Abstract: The present invention relates generally to a near-infrared light-emitting diode (LED) and the method for manufacturing the same. When preparing the light-emitting layer of the near-infrared LED according to the present invention, the CsSnXX?2 solution is coated on the substrate having the hole transport layer. Then, by a drying process, the solvent is moved away and the CsSnXX?2 solution is solidified, crystallized to CsSnXX?2 in the perovskite structure, which is used as the light-emitting layer of the near-infrared LED and emits near infrared. X and X? are identical or different halogen elements. In addition, according to the present invention, lead can be used to replace a part of tin. By adjusting the ratio of lead and tin or adopting different combination of halogen elements, the wavelength of the generated near infrared varies.Type: ApplicationFiled: October 22, 2014Publication date: February 25, 2016Inventors: YU-CHIANG CHAO, YU-CHI HUANG
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Patent number: 9023679Abstract: The present invention provides a preparation method for organic solar cells having conductive nanorods. In the process of solar cells, the present invention etches the indium-tin-oxide layer, which used as the anode, using etching fluid and forms the structure of the conductive nanorods thereon. Thereby, the distance of the holes in the active layer conducted to the anode is shorted. Besides, the light scattering or the transmittivity of the indium-tin-oxide layer is increased, which improves the efficiency of photoelectric conversion in organic solar cells.Type: GrantFiled: June 27, 2013Date of Patent: May 5, 2015Assignee: Chung Yuan Christian UniversityInventors: Yu-Chiang Chao, Fu-Min Chan
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Publication number: 20140357013Abstract: The present invention provides a preparation method for organic solar cells having conductive nanorods. In the process of solar cells, the present invention etches the indium-tin-oxide layer, which used as the anode, using etching fluid and forms the structure of the conductive nanorods thereon. Thereby, the distance of the holes in the active layer conducted to the anode is shorted. Besides, the light scattering or the transmittivity of the indium-tin-oxide layer is increased, which improves the efficiency of photoelectric conversion in organic solar cells.Type: ApplicationFiled: June 27, 2013Publication date: December 4, 2014Inventors: YU-CHIANG CHAO, FU-MIN CHAN
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Patent number: 8877535Abstract: The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.Type: GrantFiled: April 1, 2014Date of Patent: November 4, 2014Assignee: National Chiao Tung UniversityInventors: Hsiao-Wen Zan, Hsin-Fei Meng, Ming-Zhi Dai, Yu-Chiang Chao
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Publication number: 20140213006Abstract: The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.Type: ApplicationFiled: April 1, 2014Publication date: July 31, 2014Applicant: NATIONAL CHIAO TUNG UNIVERSITYInventors: Hsiao-Wen Zan, Hsin-Fei Meng, Ming-Zhi Dai, Yu-Chiang Chao
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Publication number: 20140209883Abstract: A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.Type: ApplicationFiled: March 31, 2014Publication date: July 31, 2014Applicant: National Chiao Tung UniversityInventors: Hsiao-Wen Zan, Hsin-Fei Meng, Wu-Wei Tsai, Yu-Chiang Chao
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Patent number: 8723503Abstract: The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.Type: GrantFiled: January 19, 2011Date of Patent: May 13, 2014Assignee: National Chiao Tung UniversityInventors: Hsiao-Wen Zan, Hsin-Fei Meng, Ming-Zhi Dai, Yu-Chiang Chao
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Patent number: 8723165Abstract: A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.Type: GrantFiled: May 19, 2011Date of Patent: May 13, 2014Assignee: National Chiao Tung UniversityInventors: Hsiao-Wen Zan, Hsin-Fei Meng, Wu-Wei Tsai, Yu-Chiang Chao
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Publication number: 20130005077Abstract: A chemical mechanical polishing method is provided. The chemical mechanical polishing method includes steps of providing a plurality of semiconductor elements to be polished, obtaining a respective dimension of the each semiconductor element to be polished, and polishing the each semiconductor element according to the respective dimension thereof.Type: ApplicationFiled: October 26, 2011Publication date: January 3, 2013Applicant: NATION CHIAO TUNG UNIVERSITYInventors: Hsin-Fei Meng, Hsiao-Wen Zan, Sheng-Fu Horng, Hsiu-Yuan Yang, Kuo-Jui Huang, Hao-Wen Chang, Chun-Yu Chen, Yu-Chiang Chao, Yu-Fan Chang, Bo-Jie Chang
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Publication number: 20120325318Abstract: A solar cell is provided that an extremely thin light absorber is formed between a n-type semiconductor layer and a p-type semiconductor layer such that the light absorber is used to absorb solar energy, while the p-type semiconductor layer may not absorb light. After separation of electrons and holes, the carriers will not recombine during the conduction, in order to avoid energy loss.Type: ApplicationFiled: June 23, 2011Publication date: December 27, 2012Applicant: NATIONAL CHIAO TUNG UNIVERSITYInventors: Hsin-Fei Meng, Hsiao-Wen Zan, Sheng-Fu Horng, Yu-Chiang Chao, Yuan-Pai Lin
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Publication number: 20120235120Abstract: A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.Type: ApplicationFiled: May 19, 2011Publication date: September 20, 2012Applicant: NATIONAL CHIAO TUNG UNIVERSITYInventors: Hsiao-Wen Zan, Hsin-Fei Meng, Wu-Wei Tsai, Yu-Chiang Chao
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Patent number: 8258554Abstract: A pressure detector is disclosed having an organic transistor, a pressure-detecting layer and a first electrode. The organic transistor includes an emitter, an organic layer, a grid formed with holes, and a collector, the organic layer being sandwiched between the emitter and the collector. The pressure-detecting layer is formed on the organic transistor such that the collector is sandwiched between the organic layer and the pressure-detecting layer. The first electrode is formed on the pressure-detecting layer such that the pressure-detecting layer is sandwiched between the collector and the first electrode. The area of the active region of the pressure detector is determined by the overlapped area of the electrodes, thereby reducing the pitch of the electrodes and thus the size of the pressure detector.Type: GrantFiled: May 24, 2010Date of Patent: September 4, 2012Assignee: National Chiao Tung UniversityInventors: Hsin- Fei Meng, Sheng-Fu Horng, Yu-Chiang Chao, Chun-Yu Chen, Wei-Jen Lai
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Patent number: 8217670Abstract: The invention provides a label-free sensor that includes a substrate, a first electrode formed on the substrate, a second electrode formed on the substrate and spaced away from the first electrode, and a semiconductor layer formed on the substrate and being in contact with the first electrode and the second electrode. The semiconductor layer has a plurality of probe groups bonded to the semiconductor layer by functionalization, for sensing a coupling-specific substance having bonding specificity with the probe groups. The semiconductor layer is bonded with the probe groups, and the detection of detected object is performed in an instant, quick, rapid, and sensitive manner by measuring variation in electric current, avoiding the use of fluorescent reading equipment for reading fluorescent signals.Type: GrantFiled: July 10, 2009Date of Patent: July 10, 2012Assignee: National Chiao Tung UniversityInventors: Hsin-Fei Meng, Sheng-Fu Hong, Yu-Chiang Chao, Chien-Cheng Liu, Wen-Hsing Liu, Cheng-Chung Chang, Jan-Hao Li, Ming-Zhi Dai
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Publication number: 20120086431Abstract: The present invention provides a vertical type sensor, including a substrate; a first electrode formed on the substrate; a sensing layer formed on the first electrode layer and reactive to a target substance, wherein the first electrode layer is interposed between the substrate and the sensing layer; and a second electrode layer formed on the sensing layer and having a plurality of openings, wherein the sensing layer is interposed between the first electrode layer and the second electrode layer, and the target substance contacts the sensing layer via the plurality of openings. The vertical type sensor of the present invention provides instant, sensitive and rapid detection.Type: ApplicationFiled: January 19, 2011Publication date: April 12, 2012Applicant: NATIONAL CHIAO TUNG UNIVERSITYInventors: Hsiao-Wen Zan, Hsin-Fei Meng, Ming-Zhi Dai, Yu-Chiang Chao
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Publication number: 20120018719Abstract: A phototransistor includes a substrate, a gate layer, a dielectric layer, an active layer, a source and a drain, and a light absorption layer. The gate layer is disposed on a top of the substrate, and the dielectric layer is disposed on a top of the gate layer. The active layer has a first bandgap and is disposed on a top of the dielectric layer, and the source and the drain are disposed on a top of the active layer. The light absorption layer has a second bandgap and is capped on the active layer, and the second bandgap is smaller than the first bandgap.Type: ApplicationFiled: February 15, 2011Publication date: January 26, 2012Applicant: NATIONAL CHIAO TUNG UNIVERSITYInventors: HSIAO-WEN ZAN, HSIN-FEI MENG, CHUANG-CHUANG TSAI, WEI-TSUNG CHEN, YU-CHIANG CHAO
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Publication number: 20110284949Abstract: A vertical transistor and a method of fabricating the vertical transistor are provided. The vertical transistor has a substrate, a first electrode formed on the substrate, a first insulation layer formed on the first electrode, with a portion of the first electrode exposed from the first insulation layer and having a thickness greater than 50 nm and no more than 300 nm, a grid electrode formed on the first insulation layer, a semiconductor layer formed on the first electrode, and a second electrode formed on the semiconductor layer.Type: ApplicationFiled: May 24, 2010Publication date: November 24, 2011Applicant: National Chiao Tung UniversityInventors: Hsin-Fei Meng, Hsiao-Wen Zan, Yu-Chiang Chao