Patents by Inventor Yu-Chien Ku
Yu-Chien Ku has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240136383Abstract: A semiconductor device includes a single-layered dielectric layer, a conductive line, a conductive via and a conductive pad. The conductive line and the conductive via are disposed in the single-layered dielectric layer. The conductive pad is extended into the single-layered dielectric layer to electrically connected to the conductive line.Type: ApplicationFiled: January 3, 2024Publication date: April 25, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Chien Ku, Huai-Jen Tung, Keng-Ying Liao, Yi-Hung Chen, Shih-Hsun Hsu, Yi-Fang Yang
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Patent number: 11901390Abstract: A semiconductor device includes a substrate, a dielectric layer, a plurality of dielectric patterns and a conductive pad. The substrate includes a first surface and a second surface opposite to the first surface. The dielectric layer is disposed at the first surface of the substrate, and the substrate is disposed between the dielectric layer and the second surface of the substrate. The dielectric patterns are disposed on the dielectric layer and between the first surface and the second surface of the substrate. The conductive pad is inserted between the plurality of dielectric patterns and extended into the dielectric layer.Type: GrantFiled: November 15, 2021Date of Patent: February 13, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Chien Ku, Huai-Jen Tung, Keng-Ying Liao, Yi-Hung Chen, Shih-Hsun Hsu, Yi-Fang Yang
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Publication number: 20230253433Abstract: A device is disclosed. The device includes a plurality of pixels disposed over a first surface of a semiconductor layer. The device includes a device layer disposed over the first surface. The device includes metallization layers disposed over the device layer. One of the metallization layers, closer to the first surface than any of other ones of the metallization layers, includes at least one conductive structure. The device includes an oxide layer disposed over a second surface of the semiconductor layer, the second surface being opposite to the first surface, the oxide layer also lining a recess that extends through the semiconductor layer. The device includes a spacer layer disposed between inner sidewalls of the recess and the oxide layer. The device includes a pad structure extending through the oxide layer and the device layer to be in physical contact with the at least one conductive structure.Type: ApplicationFiled: April 17, 2023Publication date: August 10, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Keng-Ying Liao, Yu-Chu Lin, Chih Wei Sung, Shih Sian Wang, Chi-Chung Jen, Yu-chien Ku, Yen-Jou Wu, Huai-jen Tung, Po-Zen Chen
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Patent number: 11652127Abstract: A device is disclosed. The device includes a plurality of pixels disposed over a first surface of a semiconductor layer. The device includes a device layer disposed over the first surface. The device includes metallization layers disposed over the device layer. One of the metallization layers, closer to the first surface than any of other ones of the metallization layers, includes at least one conductive structure. The device includes an oxide layer disposed over a second surface of the semiconductor layer, the second surface being opposite to the first surface, the oxide layer also lining a recess that extends through the semiconductor layer. The device includes a spacer layer disposed between inner sidewalls of the recess and the oxide layer. The device includes a pad structure extending through the oxide layer and the device layer to be in physical contact with the at least one conductive structure.Type: GrantFiled: April 17, 2020Date of Patent: May 16, 2023Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Keng-Ying Liao, Huai-jen Tung, Chih Wei Sung, Po-zen Chen, Yu-chien Ku, Yu-Chu Lin, Chi-Chung Jen, Yen-Jou Wu, S. S. Wang
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Publication number: 20220367559Abstract: A method includes forming a dielectric layer over a first surface of a semiconductor layer, the dielectric layer including a metallization layer. The method includes forming an opening to expose a portion of the dielectric layer. The method includes forming a buffer oxide layer lining the opening. The method includes forming, according to a patternable layer, a recess in the buffer oxide layer partially extending from a second surface of the buffer oxide layer. The method includes removing the patternable layer. The method includes extending the recess through the buffer oxide layer and a portion of the dielectric layer to expose a portion of the metallization layer. The method includes filling the recess with a conductive material to form a pad structure configured to provide electrical connection to the metallization layer.Type: ApplicationFiled: July 26, 2022Publication date: November 17, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Keng-Ying Liao, Huai-jen Tung, Chih Wei Sung, Po-Zen Chen, Yu-chien Ku, Yu-Chu Lin, Chi-Chung Jen, Yen-Jou Wu, Tsun-Kai Tsao, Yung-Lung Yang
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Patent number: 11502123Abstract: A method includes forming a dielectric layer over a first surface of a semiconductor layer, the dielectric layer including a metallization layer. The method includes forming an opening to expose a portion of the dielectric layer. The method includes forming a buffer oxide layer lining the opening. The method includes forming, according to a patternable layer, a recess in the buffer oxide layer partially extending from a second surface of the buffer oxide layer. The method includes removing the patternable layer. The method includes extending the recess through the buffer oxide layer and a portion of the dielectric layer to expose a portion of the metallization layer. The method includes filling the recess with a conductive material to form a pad structure configured to provide electrical connection to the metallization layer.Type: GrantFiled: April 17, 2020Date of Patent: November 15, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDInventors: Keng-Ying Liao, Huai-Jen Tung, Chih Wei Sung, Po-zen Chen, Yu-Chien Ku, Yu-Chu Lin, Chi-Chung Jen, Yen-Jou Wu, Tsun-kai Tsao, Yung-Lung Yang
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Publication number: 20220359606Abstract: A device is disclosed. The device includes a plurality of pixels disposed over a first surface of a semiconductor layer. The device includes a device layer disposed over the first surface. The device includes metallization layers disposed over the device layer. One of the metallization layers, closer to the first surface than any of other ones of the metallization layers, includes at least one conductive structure. The device includes an oxide layer disposed over a second surface of the semiconductor layer, the second surface being opposite to the first surface, the oxide layer also lining a recess that extends through the semiconductor layer. The device includes a spacer layer disposed between inner sidewalls of the recess and the oxide layer. The device includes a pad structure extending through the oxide layer and the device layer to be in physical contact with the at least one conductive structure.Type: ApplicationFiled: July 26, 2022Publication date: November 10, 2022Applicant: Taiwan Semiconductor Manufacturing Company LimitedInventors: Keng-Ying Liao, Huai-jen Tung, Chih Wei Sung, Po-zen Chen, Yu-chien Ku, Yu-Chu Lin, Chi-Chung Jen, Yen-Jou Wu, S.S. Wang
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Publication number: 20220077217Abstract: A semiconductor device includes a substrate, a dielectric layer, a plurality of dielectric patterns and a conductive pad. The substrate includes a first surface and a second surface opposite to the first surface. The dielectric layer is disposed at the first surface of the substrate, and the substrate is disposed between the dielectric layer and the second surface of the substrate. The dielectric patterns are disposed on the dielectric layer and between the first surface and the second surface of the substrate. The conductive pad is inserted between the plurality of dielectric patterns and extended into the dielectric layer.Type: ApplicationFiled: November 15, 2021Publication date: March 10, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Chien Ku, Huai-Jen Tung, Keng-Ying Liao, Yi-Hung Chen, Shih-Hsun Hsu, Yi-Fang Yang
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Patent number: 11177308Abstract: CMOS sensors and methods of forming the same are disclosed. The CMOS sensor includes a semiconductor substrate, a plurality of dielectric patterns, a first conductive element and a second conductive element. The semiconductor substrate has a pixel region and a circuit region. The dielectric patterns are disposed between the first portion and the second portion, wherein top surfaces of the plurality of dielectric patterns are lower than top surfaces of the first and second portions. The first conductive element is disposed below the plurality of dielectric patterns. The second conductive element inserts between the plurality of dielectric patterns to electrically connect the first conductive element.Type: GrantFiled: May 6, 2019Date of Patent: November 16, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Chien Ku, Huai-Jen Tung, Keng-Ying Liao, Yi-Hung Chen, Shih-Hsun Hsu, Yi-Fang Yang
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Publication number: 20210327951Abstract: A method includes forming a dielectric layer over a first surface of a semiconductor layer, the dielectric layer including a metallization layer. The method includes forming an opening to expose a portion of the dielectric layer. The method includes forming a buffer oxide layer lining the opening. The method includes forming, according to a patternable layer, a recess in the buffer oxide layer partially extending from a second surface of the buffer oxide layer. The method includes removing the patternable layer. The method includes extending the recess through the buffer oxide layer and a portion of the dielectric layer to expose a portion of the metallization layer. The method includes filling the recess with a conductive material to form a pad structure configured to provide electrical connection to the metallization layer.Type: ApplicationFiled: April 17, 2020Publication date: October 21, 2021Applicant: Taiwan Semiconductor Manufacturing Company LimitedInventors: Keng-Ying Liao, Huai-Jen Tung, Chih Wei Sung, Po-Zen Chen, Yu-Chien Ku, Yu-Chu Lin, Chi-Chung Jen, Yen-Jou Wu, Tsun-Kai Tsao, Y.L. Yang
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Publication number: 20210327945Abstract: A device is disclosed. The device includes a plurality of pixels disposed over a first surface of a semiconductor layer. The device includes a device layer disposed over the first surface. The device includes metallization layers disposed over the device layer. One of the metallization layers, closer to the first surface than any of other ones of the metallization layers, includes at least one conductive structure. The device includes an oxide layer disposed over a second surface of the semiconductor layer, the second surface being opposite to the first surface, the oxide layer also lining a recess that extends through the semiconductor layer. The device includes a spacer layer disposed between inner sidewalls of the recess and the oxide layer. The device includes a pad structure extending through the oxide layer and the device layer to be in physical contact with the at least one conductive structure.Type: ApplicationFiled: April 17, 2020Publication date: October 21, 2021Applicant: Taiwan Semiconductor Manufacturing Company LimitedInventors: Keng-Ying Liao, Huai-jen Tung, Chih Wei Sung, Po-zen Chen, Yu-chien Ku, Yu-Chu Lin, Chi-Chung Jen, Yen-Jou Wu, S.S. Wang
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Publication number: 20190259800Abstract: CMOS sensors and methods of forming the same are disclosed. The CMOS sensor includes a semiconductor substrate, a plurality of dielectric patterns, a first conductive element and a second conductive element. The semiconductor substrate has a pixel region and a circuit region. The dielectric patterns are disposed between the first portion and the second portion, wherein top surfaces of the plurality of dielectric patterns are lower than top surfaces of the first and second portions. The first conductive element is disposed below the plurality of dielectric patterns. The second conductive element inserts between the plurality of dielectric patterns to electrically connect the first conductive element.Type: ApplicationFiled: May 6, 2019Publication date: August 22, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Chien Ku, Huai-Jen Tung, Keng-Ying Liao, Yi-Hung Chen, Shih-Hsun Hsu, Yi-Fang Yang
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Publication number: 20190140010Abstract: CMOS sensors and methods of forming the same are disclosed. The CMOS sensor includes a semiconductor substrate, a dielectric layer, an interconnect, a bonding pad and a dummy pattern. The semiconductor substrate has a pixel region and a circuit region. The dielectric layer is surrounded by the semiconductor substrate in the circuit region. The interconnect is disposed over the dielectric layer in the circuit region. The bonding pad is disposed in the dielectric layer and electrically connects the interconnect in the circuit region. The dummy pattern is disposed in the dielectric layer and surrounds the bonding pad in the circuit region.Type: ApplicationFiled: January 31, 2018Publication date: May 9, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Chien Ku, Huai-Jen Tung, Keng-Ying Liao, Yi-Hung Chen, Shih-Hsun Hsu, Yi-Fang Yang
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Patent number: 10283548Abstract: CMOS sensors and methods of forming the same are disclosed. The CMOS sensor includes a semiconductor substrate, a dielectric layer, an interconnect, a bonding pad and a dummy pattern. The semiconductor substrate has a pixel region and a circuit region. The dielectric layer is surrounded by the semiconductor substrate in the circuit region. The interconnect is disposed over the dielectric layer in the circuit region. The bonding pad is disposed in the dielectric layer and electrically connects the interconnect in the circuit region. The dummy pattern is disposed in the dielectric layer and surrounds the bonding pad in the circuit region.Type: GrantFiled: January 31, 2018Date of Patent: May 7, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Chien Ku, Huai-Jen Tung, Keng-Ying Liao, Yi-Hung Chen, Shih-Hsun Hsu, Yi-Fang Yang