Abstract: A semiconductor device includes a substrate having a first conductivity type, a first well formed in the substrate and having a second conductivity type, a first diffusion region formed in the first well and having the first conductivity type, a first interlayer dielectric layer disposed over the first well and the first diffusion region, and a resistor wire formed of a conductive material and embedded in the first interlayer dielectric layer. The resistor wire overlaps the first diffusion region and at least partially overlaps the first well in plan view.

Abstract: A semiconductor device includes a substrate having a first conductivity type, a first well formed in the substrate and having a second conductivity type, a first diffusion region formed in the first well and having the first conductivity type, a first interlayer dielectric layer disposed over the first well and the first diffusion region, and a resistor wire formed of a conductive material and embedded in the first interlayer dielectric layer. The resistor wire overlaps the first diffusion region and at least partially overlaps the first well in plan view.

Abstract: A semiconductor device includes a dummy fin structure disposed over a substrate, a dummy gate structure disposed over a part of the dummy fin structure, a first interlayer dielectric layer in which the dummy gate structure is embedded, a second interlayer dielectric layer disposed over the first interlayer dielectric layer, and a resistor wire formed of a conductive material and embedded in the second interlayer dielectric layer. The resistor wire overlaps the dummy gate structure in plan view.

Abstract: A semiconductor device includes a dummy fin structure disposed over a substrate, a dummy gate structure disposed over a part of the dummy fin structure, a first interlayer dielectric layer in which the dummy gate structure is embedded, a second interlayer dielectric layer disposed over the first interlayer dielectric layer, and a resistor wire formed of a conductive material and embedded in the second interlayer dielectric layer. The resistor wire overlaps the dummy gate structure in plan view.

Abstract: A semiconductor device includes a substrate having a first conductivity type, a first well formed in the substrate and having a second conductivity type, a first diffusion region formed in the first well and having the first conductivity type, a first interlayer dielectric layer disposed over the first well and the first diffusion region, and a resistor wire formed of a conductive material and embedded in the first interlayer dielectric layer. The resistor wire overlaps the first diffusion region and at least partially overlaps the first well in plan view.

Abstract: A semiconductor device includes a substrate having a first conductivity type, a first well formed in the substrate and having a second conductivity type, a first diffusion region formed in the first well and having the first conductivity type, a first interlayer dielectric layer disposed over the first well and the first diffusion region, and a resistor wire formed of a conductive material and embedded in the first interlayer dielectric layer. The resistor wire overlaps the first diffusion region and at least partially overlaps the first well in plan view.

Abstract: A semiconductor device includes a substrate having a first conductivity type, a first well formed in the substrate and having a second conductivity type, a first diffusion region formed in the first well and having the first conductivity type, a first interlayer dielectric layer disposed over the first well and the first diffusion region, and a resistor wire formed of a conductive material and embedded in the first interlayer dielectric layer. The resistor wire overlaps the first diffusion region and at least partially overlaps the first well in plan view.

Abstract: A semiconductor device includes a substrate having a first conductivity type, a first well formed in the substrate and having a second conductivity type, a first diffusion region formed in the first well and having the first conductivity type, a first interlayer dielectric layer disposed over the first well and the first diffusion region, and a resistor wire formed of a conductive material and embedded in the first interlayer dielectric layer. The resistor wire overlaps the first diffusion region and at least partially overlaps the first well in plan view.

Abstract: A semiconductor device includes a substrate having a first conductivity type, a first well formed in the substrate and having a second conductivity type, a first diffusion region formed in the first well and having the first conductivity type, a first interlayer dielectric layer disposed over the first well and the first diffusion region, and a resistor wire formed of a conductive material and embedded in the first interlayer dielectric layer. The resistor wire overlaps the first diffusion region and at least partially overlaps the first well in plan view.

Abstract: A semiconductor device includes a dummy fin structure disposed over a substrate, a dummy gate structure disposed over a part of the dummy fin structure, a first interlayer dielectric layer in which the dummy gate structure is embedded, a second interlayer dielectric layer disposed over the first interlayer dielectric layer, and a resistor wire formed of a conductive material and embedded in the second interlayer dielectric layer. The resistor wire overlaps the dummy gate structure in plan view.

Abstract: A semiconductor device includes a dummy fin structure disposed over a substrate, a dummy gate structure disposed over a part of the dummy fin structure, a first interlayer dielectric layer in which the dummy gate structure is embedded, a second interlayer dielectric layer disposed over the first interlayer dielectric layer, and a resistor wire formed of a conductive material and embedded in the second interlayer dielectric layer. The resistor wire overlaps the dummy gate structure in plan view.

Abstract: A semiconductor device includes a substrate having a first conductivity type, a first well formed in the substrate and having a second conductivity type, a first diffusion region formed in the first well and having the first conductivity type, a first interlayer dielectric layer disposed over the first well and the first diffusion region, and a resistor wire formed of a conductive material and embedded in the first interlayer dielectric layer. The resistor wire overlaps the first diffusion region and at least partially overlaps the first well in plan view.

Abstract: A semiconductor device includes a dummy fin structure disposed over a substrate, a dummy gate structure disposed over a part of the dummy fin structure, a first interlayer dielectric layer in which the dummy gate structure is embedded, a second interlayer dielectric layer disposed over the first interlayer dielectric layer, and a resistor wire formed of a conductive material and embedded in the second interlayer dielectric layer. The resistor wire overlaps the dummy gate structure in plan view.

Abstract: A semiconductor device includes a dummy fin structure disposed over a substrate, a dummy gate structure disposed over a part of the dummy fin structure, a first interlayer dielectric layer in which the dummy gate structure is embedded, a second interlayer dielectric layer disposed over the first interlayer dielectric layer, and a resistor wire formed of a conductive material and embedded in the second interlayer dielectric layer. The resistor wire overlaps the dummy gate structure in plan view.

Abstract: A semiconductor device includes a dummy fin structure disposed over a substrate, a dummy gate structure disposed over a part of the dummy fin structure, a first interlayer dielectric layer in which the dummy gate structure is embedded, a second interlayer dielectric layer disposed over the first interlayer dielectric layer, and a resistor wire formed of a conductive material and embedded in the second interlayer dielectric layer. The resistor wire overlaps the dummy gate structure in plan view.

Abstract: A circuit for simultaneously analyzing performance and bugs includes a mapping unit and a USB 3.0 data flow analyzer. The mapping unit is used for mapping commands transmitted to a USB 3.0 host through a peripheral component interconnect express and internal events of the USB 3.0 host to a packet of a USB 3.0 bus. The USB 3.0 data flow analyzer is used for analyzing performance and bugs of the USB 3.0 host through the packet of the USB 3.0 bus.

Abstract: An equalizer includes an oversampling logic unit, a direct current setting unit, and an alternating current setting unit. The oversampling logic unit oversamples data from a channel to generate a plurality of direct current terms and a plurality of alternating current terms according to an oversampling clock, and outputting a plurality of direct current terms corresponding to an output clock and a plurality of alternating current terms corresponding to the output clock according to the output clock. The direct current setting unit adjusts a direct current setting of the equalizer according to a plurality of direct current terms inputted by the oversampling logic unit within a first predetermined time. And the alternating current setting unit adjusts an alternating current setting of the equalizer according to a plurality of alternating current terms inputted by the oversampling logic unit within the first predetermined time.

Abstract: A circuit for simultaneously analyzing performance and bugs includes a mapping unit and a USB 3.0 data flow analyzer. The mapping unit is used for mapping commands transmitted to a USB 3.0 host through a peripheral component interconnect express and internal events of the USB 3.0 host to a packet of a USB 3.0 bus. The USB 3.0 data flow analyzer is used for analyzing performance and bugs of the USB 3.0 host through the packet of the USB 3.0 bus.

Abstract: An equalizer includes an oversampling logic unit, a direct current setting unit, and an alternating current setting unit. The oversampling logic unit oversamples data from a channel to generate a plurality of direct current terms and a plurality of alternating current terms according to an oversampling clock, and outputting a plurality of direct current terms corresponding to an output clock and a plurality of alternating current terms corresponding to the output clock according to the output clock. The direct current setting unit adjusts a direct current setting of the equalizer according to a plurality of direct current terms inputted by the oversampling logic unit within a first predetermined time. And the alternating current setting unit adjusts an alternating current setting of the equalizer according to a plurality of alternating current terms inputted by the oversampling logic unit within the first predetermined time.

Abstract: A system for realizing multi-port storage media based on a UASP protocol of a USB specification version 3.0 includes a Universal Serial Bus, at least one storage media, and a storage device, where the storage device stores a mapping table. The Universal Serial Bus is used for transmitting at least one write data command. Each storage media is used for replying a write ready command to the Universal Serial Bus after receiving a write data command. When the Universal Serial Bus transmits a data including a command tag according to the write ready command, the storage device finds a number mapping to the command tag according to the command tag and the mapping table, and transmits the data to a storage media mapping to the number.