Abstract: A support unit provided in an apparatus for treating a substrate using plasma includes a dielectric plate on which the substrate is placed, an electrode plate disposed under the dielectric plate, a power supply rod that applies power to the electrode plate, and a flange that has a shape surrounding the power supply rod and that is spaced apart from the power supply rod.

Abstract: Provided is a shower head unit for control temperature for each area using a planar heating element and a substrate treating system having the same. The substrate treating system includes a housing, a shower head unit installed on an inner upper side of the housing and for entering a process gas for etching a substrate into the housing, and an electrostatic chuck installed on an inner lower side of the housing and for seating the substrate, wherein the shower head unit is installed as a planar heating element in a plurality of areas to control temperature for each area.

Abstract: A support unit provided in an apparatus for treating a substrate using plasma includes a dielectric plate on which the substrate is placed, an electrode plate disposed under the dielectric plate, a power supply rod that applies power to the electrode plate, and a flange that has a shape surrounding the power supply rod and that is spaced apart from the power supply rod.

Abstract: A substrate treating apparatus and a component thereof are provided. The substrate treating apparatus includes a chamber having a treatment space therein, a chamber having a treatment space therein, a supporting unit to support a substrate inside the treatment space, a gas supplying unit to supply process gas into the treatment space, and a plasma source to excite the process gas inside the treatment space. The supporting unit includes a supporting plate on which the substrate is placed, and an edge ring having a ring shape, provided around the supporting plate, and formed on an upper portion thereof with a coating layer having a silicon carbide crystal developed in preferred orientation to <111> crystal direction of a beta-silicon carbide (?-SiC) crystal.