Abstract: A method and a system for showing a cursor for user interaction on a display device are provided. In the method, a reference position initialized at the end of a ray cast emitted from the user side is determined. A target position, which moves with a human body portion of a user, is determined. The target position is different from the reference position. A modified position is determined based on the reference position and the target position. The reference, target, and the modified positions are located on the same plane parallel with the user side. The modified position is different from the target position. The modified position is used as the current position of the cursor. The modified position represents a position of the end of the ray cast emitted from the user side currently. Accordingly, the cursor may be steady in the extended reality.

Abstract: A cultivating apparatus includes a carrier, a fresh air supply, a humidifying mechanism, an illuminating mechanism, a blower mechanism, a sterilizing pool and a controlling mechanism. The fresh air supply, the humidifying mechanism, the illuminating mechanism, the blower mechanism, the sterilizing pool and the controlling mechanism are inserted in or supported on the carrier. Thus, the cultivate apparatus is movable and operable to control temperature, humidity, air quality and irradiation for cultivating of plants or mushrooms.

Abstract: A method and a system for modifying the position of a cursor are provided. In the method, the depth information of a human body portion of a user is determined. The user uses the human body portion to move the cursor. The cursor is located at the end of a ray cast emitted from a user side, and the user's head wears a head mounted display. The first position of the cursor is determined. The second position of the cursor different from the first position is determined based on the depth information of the human body portion and the first position. The second position is used as the current position of the cursor, and the current position is located at the end of a ray cast emitted from the user currently. Accordingly, it is easy to control the cursor for different heights or arm lengths.

Abstract: Determining the maximum number of dies that fit on a semiconductor wafer is disclosed. The x- and y-coordinates of an initial starting position on a semiconductor wafer are determined. The delta-x and delta-y offsets for subsequent starting positions are also determined. Starting at a current position equal to the initial starting position, the following is repeated for each of a predetermined number of times. First, the semiconductor wafer is covered with fields. Second, the number of dies that are completely covered by the semiconductor wafer is counted. Third, the current starting position is increased by the delta-x and the delta-y offsets. Once this has been repeated, the actual starting position is set as the current starting position at which the number of dies completely covered by the semiconductor wafer is maximized.

Abstract: A method of early and effective detection of plasma damage to a gate oxide layer by a special design of the active region is achieved. A plasma-damage testing structure is fabricated by providing a gate electrode overlying an active area of a semiconductor substrate wherein a gate oxide layer underlies the gate electrode. A portion of the active area underlying the gate electrode has sharp corners. The plasma-damage testing structure is exposed to a plasma environment. Electrical tests are performed to detect plasma damage to the plasma-damage testing structure. This model provides an accurate evaluation of plasma damage to actual MOSFET's.

Abstract: Determining the maximum number of dies that fit on a semiconductor wafer is disclosed. The x- and y-coordinates of an initial starting position on a semiconductor wafer are determined. The delta-x and delta-y offsets for subsequent starting positions are also determined. Starting at a current position equal to the initial starting position, the following is repeated for each of a predetermined number of times. First, the semiconductor wafer is covered with fields. Second, the number of dies that are completely covered by the semiconductor wafer is counted. Third, the current starting position is increased by the delta-x and the delta-y offsets. Once this has been repeated, the actual starting position is set as the current starting position at which the number of dies completely covered by the semiconductor wafer is maximized.

Abstract: A method of early and effective detection of plasma damage to a gate oxide layer by a special design of the active region is achieved. A plasma-damage testing structure is fabricated by providing a gate electrode overlying an active area of a semiconductor substrate wherein a gate oxide layer underlies the gate electrode. A portion of the active area underlying the gate electrode has sharp corners. The plasma-damage testing structure is exposed to a plasma environment. Electrical tests are performed to detect plasma damage to the plasma-damage testing structure. This model provides an accurate evaluation of plasma damage to actual MOSFET's.

Abstract: A method of early and effective detection of plasma damage to a gate oxide layer by a special design of the active region is achieved. A plasma-damage testing structure is fabricated by providing a gate electrode overlying an active area of a semiconductor substrate wherein a gate oxide layer underlies the gate electrode. A portion of the active area underlying the gate electrode has sharp corners. The plasma-damage testing structure is exposed to a plasma environment. Electrical tests are performed to detect plasma damage to the plasma-damage testing structure. This model provides an accurate evaluation of plasma damage to actual MOSFET's.