Patents by Inventor Yu-Feng Tsai
Yu-Feng Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12009456Abstract: A light-emitting diode structure including a semiconductor stack layer is provided. The semiconductor stack layer includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The active layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the active layer. A side wall at any side of the semiconductor stack layer includes a rough surface. A manufacturing method of a light-emitting diode structure is also provided.Type: GrantFiled: November 6, 2021Date of Patent: June 11, 2024Assignee: PlayNitride Display Co., Ltd.Inventors: Bo-Wei Wu, Yu-Yun Lo, Shiang-Ning Yang, Chang-Feng Tsai
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Patent number: 12008182Abstract: The disclosure provides a flexible device. The flexible display device includes a flexible substrate and a planarized layer. A thickness of the planarized layer is in a range from 0.5 ?m to 200 ?m. A thickness ratio of the thickness of the planarized layer to a thickness of the flexible substrate is in a range from 0.025 to 20.Type: GrantFiled: September 28, 2022Date of Patent: June 11, 2024Assignee: Innolux CorporationInventors: Yu-Chia Huang, Yuan-Lin Wu, Kuan-Feng Lee, Tsung-Han Tsai
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Patent number: 12008183Abstract: The disclosure provides a display panel including a substrate, an active layer, a first electrode layer, a common electrode layer, a cathode layer, and a spacer. The active layer is located on the substrate. The first electrode layer is located on the active layer, and the first electrode layer includes a first gate and a second gate. The common electrode layer is located on the first electrode layer. The common electrode layer has a first region, a second region, and a first necking region. The first necking region connects the first region and the second region. The first region and the first gate are correspondingly disposed, and the second region and the second gate are correspondingly disposed. The cathode layer is located on the common electrode layer. The spacer is located between the common electrode layer and the cathode layer. The spacer and the first necking region are correspondingly disposed.Type: GrantFiled: February 6, 2023Date of Patent: June 11, 2024Assignee: Innolux CorporationInventors: Chung-Wen Yen, Hsia-Ching Chu, Kuan-Feng Lee, Yu-Sheng Tsai
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Publication number: 20240157890Abstract: A vehicle electronic device is provided, including a vehicle window assembly, a first signal element, and a first protective element. The vehicle window assembly comprises a first protective substrate, a second protective substrate, and a display panel. The display panel is disposed between the first protective substrate and the second protective substrate. The first signal element is electrically connected to the display panel. The first protective element covers at least one portion of the first signal element.Type: ApplicationFiled: September 28, 2023Publication date: May 16, 2024Inventors: Yu-Chia HUANG, Tsung-Han TSAI, Kuan-Feng LEE, Li-Wei SUNG
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Patent number: 11985906Abstract: A magnetic tunnel junction (MTJ) memory cell and a metallic etch mask portion are formed over a substrate. At least one dielectric etch stop layer is deposited over the metallic etch mask portion, and a via-level dielectric layer is deposited over the at least one dielectric etch stop layer. A via cavity may be etched through the via-level dielectric layer, and a top surface of the at least one dielectric etch stop layer is physically exposed. The via cavity may be vertically extended by removing portions of the at least one dielectric etch stop layer and the metallic etch mask portion. A contact via structure is formed directly on a top surface of the top electrode in the via cavity to provide a low-resistance contact to the top electrode.Type: GrantFiled: March 12, 2021Date of Patent: May 14, 2024Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Yu-Feng Yin, Tai-Yen Peng, An-Shen Chang, Han-Ting Tsai, Qiang Fu, Chung-Te Lin
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Publication number: 20240147711Abstract: The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.Type: ApplicationFiled: January 4, 2024Publication date: May 2, 2024Inventors: PERNG-FEI YUH, YIH WANG, MENG-SHENG CHANG, JUI-CHE TSAI, KU-FENG LIN, YU-WEI LIN, KEH-JENG CHANG, CHANSYUN DAVID YANG, SHAO-TING WU, SHAO-YU CHOU, PHILEX MING-YAN FAN, YOSHITAKA YAMAUCHI, TZU-HSIEN YANG
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Patent number: 11974403Abstract: A method for manufacturing an electronic device includes the steps of providing a flexible substrate, forming an electric circuit layer on the flexible substrate at an elevated temperature, and enhancing a transmittance of the flexible substrate after forming the electric circuit layer.Type: GrantFiled: August 19, 2021Date of Patent: April 30, 2024Assignee: InnoLux CorporationInventors: Yu-Chia Huang, Kuan-Feng Lee, Tsung-Han Tsai
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Patent number: 11972982Abstract: In a method of manufacturing a semiconductor device, a fin structure is formed by patterning a semiconductor layer, and an annealing operation is performed on the fin structure. In the patterning of the semiconductor layer, a damaged area is formed on a sidewall of the fin structure, and the annealing operation eliminates the damaged area.Type: GrantFiled: July 14, 2022Date of Patent: April 30, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun Hsiung Tsai, Yu-Ming Lin, Kuo-Feng Yu, Ming-Hsi Yeh, Shahaji B. More, Chandrashekhar Prakash Savant, Chih-Hsin Ko, Clement Hsingjen Wann
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Patent number: 11970116Abstract: An operating method of an optical system in a vehicle is provided. The optical system includes a display device. The display device includes a display panel and a plurality of light emitting units. The light emitting units are configured to emit a light to the display panel. The operating method includes the following steps. An emphasized portion of an object is determined. An image corresponding to the emphasized portion is displayed by the display device by adjusting a light intensity of at least a portion of the light emitted from the light emitting units.Type: GrantFiled: May 11, 2022Date of Patent: April 30, 2024Assignee: Innolux CorporationInventors: Yu-Chia Huang, Tsung-Han Tsai, Kuan-Feng Lee
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Publication number: 20240136344Abstract: A display device includes a substrate, at least one light emitting unit bound on the substrate, a transparency controllable unit disposed on the substrate, and an integrated circuit unit overlapped with the substrate. The integrated circuit unit includes a semiconducting structure and a conductive structure overlapped with the semiconducting structure. The integrated circuit unit is electrically connected to the at least one light emitting unit and the transparency controllable unit.Type: ApplicationFiled: September 17, 2023Publication date: April 25, 2024Applicant: InnoLux CorporationInventors: Jia-Yuan CHEN, Yu-Chia HUANG, Tsung-Han TSAI, Kuan-Feng LEE
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Patent number: 11961444Abstract: The disclosure provides a transparent display device including a display panel. The display panel includes a display area, a non-display area, and a plurality of pixels. The non-display area is adjacent to the display area. The plurality of pixels are disposed in the display area. A difference between a transmittance of the display area and a transmittance of the non-display area is less than 30% of the transmittance of the display area.Type: GrantFiled: February 3, 2023Date of Patent: April 16, 2024Assignee: Innolux CorporationInventors: Yu-Chia Huang, Yuan-Lin Wu, Tsung-Han Tsai, Kuan-Feng Lee
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Publication number: 20240113221Abstract: A fin field effect transistor (FinFET) device structure is provided. The FinFET device structure includes a plurality of fin structures above a substrate, an isolation structure over the substrate and between the fin structures, and a gate structure formed over the fin structure. The FinFET device structure includes a source/drain (S/D) structure over the fin structure, and the S/D structure is adjacent to the gate structure. The FinFET device structure also includes a metal silicide layer over the S/D structure, and the metal silicide layer is in contact with the isolation structure.Type: ApplicationFiled: November 28, 2023Publication date: April 4, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Hsiung TSAI, Shahaji B. MORE, Cheng-Yi PENG, Yu-Ming LIN, Kuo-Feng YU, Ziwei FANG
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Patent number: 11942007Abstract: A transparent display device is provided. The transparent display device includes a display unit having a circuit area and a transparent area. The display unit includes a plurality of signal lines located in the circuit area, a plurality of pixel circuits electrically connected to the signal lines and located in the circuit area, a plurality of light-emitting elements driven by the pixel circuits and located in the circuit area, and an encapsulation layer located in the circuit area and the transparent area. A first thickness of the encapsulation layer located in the circuit area is different from a second thickness of the encapsulation layer located in the transparent area.Type: GrantFiled: November 4, 2022Date of Patent: March 26, 2024Assignee: INNOLUX CORPORATIONInventors: Yu-Chia Huang, Tsung-Han Tsai, Kuan-Feng Lee
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Publication number: 20240097067Abstract: A manufacturing method of an electronic element module is provided. The method includes: disposing a plurality of first micro-light-emitting diodes on a first temporary substrate; and replacing at least one defective micro-light-emitting diode of the first micro-light-emitting diodes with at least one second micro-light-emitting diode. The first micro-light-emitting diodes and at least one second micro-light-emitting diode are distributed on the first temporary substrate. The first micro-light-emitting diodes and at least one second micro-light-emitting diode have same properties, and at least one of the appearance difference, the height difference and the orientation difference exists between the first micro-light-emitting diodes and at least one second micro-light-emitting diode. A semiconductor structure and a display panel are also provided.Type: ApplicationFiled: December 4, 2023Publication date: March 21, 2024Applicant: PlayNitride Display Co., Ltd.Inventors: Bo-Wei Wu, Yu-Yun Lo, Chien-Chen Kuo, Chang-Feng Tsai, Tzu-Yang Lin
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Patent number: 11928261Abstract: The disclosure provides a display device. The display device includes a display panel and a vibration generating module. The vibration generating module is attached to the display panel and includes a substrate, a circuit layer, and a plurality of vibrators. The circuit layer and the plurality of vibrators are disposed on the substrate, and the plurality of vibrators are electrically connected to the circuit layer.Type: GrantFiled: October 11, 2022Date of Patent: March 12, 2024Assignee: Innolux CorporationInventors: Yu-Chia Huang, Yuan-Lin Wu, Hsiao-Lang Lin, Tsung-Han Tsai, Kuan-Feng Lee
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Publication number: 20240071953Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.Type: ApplicationFiled: November 6, 2023Publication date: February 29, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Ming Chiang, Chao-wei Li, Wei-Lun Tsai, Chia-Min Lin, Yi-Da Tsai, Sheng-Feng Weng, Yu-Hao Chen, Sheng-Hsiang Chiu, Chih-Wei Lin, Ching-Hua Hsieh
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Publication number: 20240071954Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.Type: ApplicationFiled: November 9, 2023Publication date: February 29, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Ming Chiang, Chao-wei Li, Wei-Lun Tsai, Chia-Min Lin, Yi-Da Tsai, Sheng-Feng Weng, Yu-Hao Chen, Sheng-Hsiang Chiu, Chih-Wei Lin, Ching-Hua Hsieh
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Publication number: 20090116189Abstract: A cooling system for a computer power supply unit includes: a housing; a plurality of cooling fans; a temperature controller; at least one temperature sensor coupled electrically to the temperature controller; and a plurality of fan-driving circuits coupled electrically and respectively to the cooling fans and controlled by the temperature controller for activating and deactivating the cooling fans, respectively. The temperature controller is configured with different temperature settings, each corresponding to a number of the cooling fans, and controls the fan-driving circuits to activate a number of the cooling fans according to the temperature setting corresponding to a temperature detected by the temperature sensor.Type: ApplicationFiled: November 6, 2007Publication date: May 7, 2009Inventors: Yung-Yu Chang, Cheng-Pin Lin, Yu-Feng Tsai
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Patent number: 7098616Abstract: A control device includes a control module controlling a polarity switching unit connected electrically to a motor unit of a food processor to provide a first current path for an input power signal through the motor unit when the control module is operated in a processing mode, and further controlling the polarity switching unit to provide a second current path for the input power signal through the motor unit when the control module is operated in a braking mode. A power control unit is connected electrically to the motor unit and the control module, and controls the power control unit such that the power control unit reduces an amount of the input power signal that flows through the second current path during a braking period when the control module is operated in the braking mode.Type: GrantFiled: July 5, 2005Date of Patent: August 29, 2006Assignee: Ya Horng Electronic Co., Ltd.Inventors: Yu-Feng Tsai, Fu-Wen Yu, Chia-Cheng Lin