Patents by Inventor Yu-Fu Lin

Yu-Fu Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11984379
    Abstract: Provided is an electronic package, in which a heat dissipating body is formed on an electronic device and is combined with a heat sink so that the electronic device, the heat dissipating body and the heat sink form a receiving space, and a heat dissipating material is formed in the receiving space and in contact with the heat sink and the electronic device, where a fluid regulating space is formed between the heat dissipating material and the heat dissipating body and is used as a volume regulating space for the heat dissipating material during thermal expansion and contraction.
    Type: Grant
    Filed: July 8, 2021
    Date of Patent: May 14, 2024
    Assignee: SILICONWARE PRECISION INDUSTRIES CO., LTD.
    Inventors: Yu-Lung Huang, Chih-Ming Huang, Kuo-Hua Yu, Chang-Fu Lin
  • Patent number: 11985906
    Abstract: A magnetic tunnel junction (MTJ) memory cell and a metallic etch mask portion are formed over a substrate. At least one dielectric etch stop layer is deposited over the metallic etch mask portion, and a via-level dielectric layer is deposited over the at least one dielectric etch stop layer. A via cavity may be etched through the via-level dielectric layer, and a top surface of the at least one dielectric etch stop layer is physically exposed. The via cavity may be vertically extended by removing portions of the at least one dielectric etch stop layer and the metallic etch mask portion. A contact via structure is formed directly on a top surface of the top electrode in the via cavity to provide a low-resistance contact to the top electrode.
    Type: Grant
    Filed: March 12, 2021
    Date of Patent: May 14, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Yu-Feng Yin, Tai-Yen Peng, An-Shen Chang, Han-Ting Tsai, Qiang Fu, Chung-Te Lin
  • Patent number: 11978392
    Abstract: A precharge method for a data driver includes steps of: outputting a display data to a plurality of output terminals of the data driver; outputting a second precharge voltage to an output terminal among the plurality of output terminals prior to outputting the display data to the output terminal, to precharge the output terminal to a voltage level closer to an output voltage; and outputting a first precharge voltage to the output terminal prior to outputting the second precharge voltage. The first precharge voltage provides a faster voltage transition on the output terminal than the second precharge voltage.
    Type: Grant
    Filed: May 31, 2023
    Date of Patent: May 7, 2024
    Assignee: NOVATEK Microelectronics Corp.
    Inventors: Min-Yang Chiu, Yu-Sheng Ma, Jin-Yi Lin, Hsuan-Yu Chen, Jhih-Siou Cheng, Chun-Fu Lin
  • Patent number: 11973502
    Abstract: A circuit includes cross coupled invertors including a first invertor and a second inventor. The first invertor and the second invertor are cross coupled at a first data node and a second data node. An input unit is coupled between the cross-coupled invertors and a power node. The input unit controls the cross-coupled invertors in response to a first input signal received at a first input terminal of the input unit and a second input signal received at a second input terminal of the input unit. A first transistor is connected between the power node and a supply node. The first transistor connects the power node to the supply node in response to an enable signal changing to a first value. A second transistor is connected between the power node and ground. The second transistor connects the power node to the ground in response to the enable signal changing to a second value.
    Type: Grant
    Filed: May 1, 2023
    Date of Patent: April 30, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Fu Lee, Hon-Jarn Lin, Yu-Der Chih
  • Publication number: 20240133716
    Abstract: A reading device for capacitive sensing element comprises a differential capacitive sensing element, a modulator, a charge-voltage conversion circuit, a phase adjustment circuit, a demodulator and a low-pass filter. The modulator outputs a modulation signal to the common node of the capacitive sensing element and modulates the output signal of the capacitive sensing element. The two input terminals of the charge-to-voltage conversion circuit are connected to two non-common nodes of the capacitive sensing element. The charge-to-voltage converter read the output charge of the capacitive sensing element and convert it into a voltage signal. The modulator generates a demodulation signal through the phase adjustment circuit. The demodulator receives the demodulation signal from the phase adjustment circuit and demodulates the output of the charge-to-voltage conversion circuit. The low-pass filter is connected to the output of the demodulator for filtering the demodulated voltage signal to output the read signal.
    Type: Application
    Filed: January 13, 2023
    Publication date: April 25, 2024
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Lu-Pu LIAO, Yu-Sheng LIN, Liang-Ying LIU, Chin-Fu KUO
  • Patent number: 11968908
    Abstract: In an embodiment, a method includes: forming a first inter-metal dielectric (IMD) layer over a semiconductor substrate; forming a bottom electrode layer over the first IMD layer; forming a magnetic tunnel junction (MTJ) film stack over the bottom electrode layer; forming a first top electrode layer over the MTJ film stack; forming a protective mask covering a first region of the first top electrode layer, a second region of the first top electrode layer being uncovered by the protective mask; forming a second top electrode layer over the protective mask and the first top electrode layer; and patterning the second top electrode layer, the first top electrode layer, the MTJ film stack, the bottom electrode layer, and the first IMD layer with an ion beam etching (IBE) process to form a MRAM cell, where the protective mask is etched during the IBE process.
    Type: Grant
    Filed: June 30, 2022
    Date of Patent: April 23, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tai-Yen Peng, Hui-Hsien Wei, Han-Ting Lin, Sin-Yi Yang, Yu-Shu Chen, An-Shen Chang, Qiang Fu, Chen-Jung Wang
  • Patent number: 11961546
    Abstract: A reference circuit for generating a reference current includes a plurality of resistive elements including at least one magnetic tunnel junction (MTJ). A control circuit is coupled to a first terminal of the at least one MTJ and is configured to selectively flow current through the at least one MTJ in the forward and inverse direction to generate a reference current.
    Type: Grant
    Filed: August 2, 2021
    Date of Patent: April 16, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Fu Lee, Hon-Jarn Lin, Po-Hao Lee, Ku-Feng Lin, Yi-Chun Shih, Yu-Der Chih
  • Patent number: 11944017
    Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes an insulation layer. A bottom electrode via is disposed in the insulation layer. The bottom electrode via includes a conductive portion and a capping layer over the conductive portion. A barrier layer surrounds the bottom electrode via. A magnetic tunneling junction (MTJ) is disposed over the bottom electrode via.
    Type: Grant
    Filed: May 5, 2023
    Date of Patent: March 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Tai-Yen Peng, Yu-Shu Chen, Chien Chung Huang, Sin-Yi Yang, Chen-Jung Wang, Han-Ting Lin, Jyu-Horng Shieh, Qiang Fu
  • Publication number: 20240094104
    Abstract: An embodiment interfacial bonding test structure may include a first substrate having a first planar surface, a second substrate having a second planar surface that is parallel to the first planar surface, a first semiconductor die, and a second semiconductor die, each semiconductor die bonded between the first substrate and the second substrate thereby forming a sandwich structure. The first semiconductor die and the second semiconductor die may be bonded to the first surface with a first adhesive and may be bonded to the second surface with a second adhesive. The first semiconductor die and the second semiconductor die may be displaced from one another by a first separation along a direction parallel to the first planar surface and the second planar surface. The second substrate may include a notch having an area that overlaps with an area of the first separation in a plan view.
    Type: Application
    Filed: April 20, 2023
    Publication date: March 21, 2024
    Inventors: Yu-Sheng Lin, Jyun-Lin Wu, Yao-Chun Chuang, Chin-Fu Kao
  • Publication number: 20240099150
    Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.
    Type: Application
    Filed: November 28, 2023
    Publication date: March 21, 2024
    Inventors: Tai-Yen Peng, Yu-Shu Chen, Sin-Yi Yang, Chen-Jung Wang, Chien Chung Huang, Han-Ting Lin, Jyu-Horng Shieh, Qiang Fu
  • Publication number: 20230333489
    Abstract: The present disclosure provides an exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas. The exhaust system includes: a main exhaust pipe positioned above the semiconductor manufacturing equipment and having a top surface and a bottom surface extending parallel to the top surface; a first branch pipe including an upstream end coupled to a source of a gas mixture and a downstream end connected to the main exhaust pipe through the top surface; a second branch pipe including an upstream end and a downstream end connected to the main exhaust pipe through the bottom surface; and a detector configured to detect presence of the hazardous gas in the second branch pipe.
    Type: Application
    Filed: June 20, 2023
    Publication date: October 19, 2023
    Inventors: Yu-Fu Lin, Shih-Chang Shih, Chia-Chen Chen
  • Patent number: 11681232
    Abstract: The present disclosure provides an exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas. The exhaust system includes: a main exhaust pipe having a top surface and a bottom surface; a first branch pipe including an upstream end coupled to a source of a gas mixture containing the hazardous gas and a downstream end connected to the main exhaust pipe through the top surface; a second branch pipe including a downstream end connected to the main exhaust pipe through the bottom surface; and a detector configured to detect presence of the hazardous gas in the second branch pipe.
    Type: Grant
    Filed: April 16, 2021
    Date of Patent: June 20, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Fu Lin, Shih-Chang Shih, Chia-Chen Chen
  • Patent number: 11370062
    Abstract: A multifunctional shaft apparatus includes a shaft base, a spindle, a tool holder, an ultrasonic vibration assembly, a laser light source and a mirror assembly. The spindle is disposed in the shaft base. The spindle has a laser channel extending along the spindle. The tool holder is disposed on the spindle. The tool holder has a hollow passage, an inner space and a recessed portion. The hollow passage is communicated with the laser channel. An inner wall of the hollow passage has at least one through hole communicated with the inner space, and the recessed portion is disposed on a bottom surface of the tool holder. The bottom surface has a light outlet. The ultrasonic vibration assembly includes a vibration member disposed in the recessed portion. The mirror assembly is disposed in the tool holder and is configured to reflect the laser light beam generated by the laser light source.
    Type: Grant
    Filed: November 28, 2019
    Date of Patent: June 28, 2022
    Assignees: METAL INDUSTRIES RESEARCH & DEVELOPMENT CENTRE, PARFAITE TOOL CO., LTD.
    Inventors: Yu-Ting Lyu, Yu-Fu Lin, Jui-Teng Chen, Chih-Hung Chou
  • Publication number: 20210232054
    Abstract: The present disclosure provides an exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas. The exhaust system includes: a main exhaust pipe having a top surface and a bottom surface; a first branch pipe including an upstream end coupled to a source of a gas mixture containing the hazardous gas and a downstream end connected to the main exhaust pipe through the top surface; a second branch pipe including a downstream end connected to the main exhaust pipe through the bottom surface; and a detector configured to detect presence of the hazardous gas in the second branch pipe.
    Type: Application
    Filed: April 16, 2021
    Publication date: July 29, 2021
    Inventors: Yu-Fu Lin, Shih-Chang Shih, Chia-Chen Chen
  • Patent number: 11054756
    Abstract: An apparatus for cleaning an electrostatic reticle holder used in a lithography system includes a chamber for providing a low pressure environment for the electrostatic reticle holder and an ultrasound transducer configured to apply ultrasound waves to the electrostatic reticle holder. The apparatus further includes a controller configured to control the ultrasound transducer and a gas flow controller. The gas flow controller is configured to enable pressurizing or depressurizing the chamber.
    Type: Grant
    Filed: June 15, 2020
    Date of Patent: July 6, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Fu Lin, Tung-Jung Chang, Chia-Chen Chen
  • Patent number: 10983447
    Abstract: The present disclosure provides an exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas. The exhaust system includes: a main exhaust pipe having a top surface and a bottom surface; a first branch pipe including an upstream end coupled to a source of a gas mixture containing the hazardous gas and a downstream end connected to the main exhaust pipe through the top surface; a second branch pipe including a downstream end connected to the main exhaust pipe through the bottom surface; and a detector configured to detect presence of the hazardous gas in the second branch pipe.
    Type: Grant
    Filed: September 14, 2017
    Date of Patent: April 20, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Fu Lin, Shih-Chang Shih, Chia-Chen Chen
  • Patent number: 10792767
    Abstract: A laser preheating control method is applied to a laser preheating control device. When a cutter processes a workpiece along a process path, a laser source of the device is provided to output a laser beam to the workpiece for selectively forming a laser spot on the workpiece surface. And according to a movement direction of the cutter, a laser controller of the device is provided to form the laser spot only on a preheating region of the workpiece, where in front of the cutter in the process path, for preheating the workpiece in the preheating region. As a result, the laser spot will not repeatedly heat the workpiece behind the cutter in the process path, and the qualitative change of the workpiece caused by repeating heating is preventable.
    Type: Grant
    Filed: December 26, 2017
    Date of Patent: October 6, 2020
    Assignees: Metal Industries Research & Development Centre, Parfaite Tool Co., Ltd.
    Inventors: Yu-Ting Lu, Yu-Fu Lin, Jui-Teng Chen, Wen-Long Chang, Chih-Hung Chou
  • Publication number: 20200310258
    Abstract: An apparatus for cleaning an electrostatic reticle holder used in a lithography system includes a chamber for providing a low pressure environment for the electrostatic reticle holder and an ultrasound transducer configured to apply ultrasound waves to the electrostatic reticle holder. The apparatus further includes a controller configured to control the ultrasound transducer and a gas flow controller. The gas flow controller is configured to enable pressurizing or depressurizing the chamber.
    Type: Application
    Filed: June 15, 2020
    Publication date: October 1, 2020
    Inventors: Yu-Fu LIN, Tung-Jung CHANG, Chia-Chen CHEN
  • Publication number: 20200189030
    Abstract: A multifunctional shaft apparatus includes a shaft base, a spindle, a tool holder, an ultrasonic vibration assembly, a laser light source and a mirror assembly. The spindle is disposed in the shaft base. The spindle has a laser channel extending along the spindle. The tool holder is disposed on the spindle. The tool holder has a hollow passage, an inner space and a recessed portion. The hollow passage is communicated with the laser channel. An inner wall of the hollow passage has at least one through hole communicated with the inner space, and the recessed portion is disposed on a bottom surface of the tool holder. The bottom surface has a light outlet. The ultrasonic vibration assembly includes a vibration member disposed in the recessed portion. The mirror assembly is disposed in the tool holder and is configured to reflect the laser light beam generated by the laser light source.
    Type: Application
    Filed: November 28, 2019
    Publication date: June 18, 2020
    Inventors: Yu-Ting LYU, Yu-Fu LIN, Jui-Teng CHEN, Chih-Hung CHOU
  • Patent number: D1018907
    Type: Grant
    Filed: November 15, 2021
    Date of Patent: March 19, 2024
    Assignee: CHENG UEI PRECISION INDUSTRY CO., LTD.
    Inventors: Yun-Chien Lee, Yi-Ching Hsu, Pei-Yi Lin, Yu-Hung Su, Sheng-Yuan Huang, Chun-Fu Lin