Patents by Inventor Yu-Hao Chen

Yu-Hao Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240119875
    Abstract: A mending method for a display includes the steps of making a display device light to make a plurality of light emitting positions thereof shine, searching out a plurality of defect positions among the light emitting positions, providing a transferring device having a transferring surface with a plurality of miniature light emitting elements positioned correspondingly to the light emitting positions, planning a mending procedure which includes in the area the transferring surface corresponds to, choosing in chief the largest number of defect positions able to be mended at a single time according to the positions of the miniature light emitting elements and then in the area the transferring surface corresponds to, planning the rest of the defect positions according to the rest of the miniature light emitting elements, and according to the mending procedure, moving the transferring device to weld the miniature light emitting elements at the defect positions.
    Type: Application
    Filed: October 5, 2023
    Publication date: April 11, 2024
    Inventors: Tsan-Jen CHEN, Chih-Hao TSAI, Yu-Cheng YANG, Jen-Hung Lo, Yan-Ru TSAI
  • Publication number: 20240120338
    Abstract: A semiconductor device structure is provided. The semiconductor device has a first dielectric wall between an n-type source/drain region and a p-type source/drain region to physically and electrically isolate the n-type source/drain region and the p-type source/drain region from each other. A second dielectric wall is formed between a first channel region connected to the n-type source/drain region and a second channel region connected to the p-type source/drain region. A contact is formed to physically and electrically connect the n-type source/drain region with the p-type source/drain region, wherein the contact extends over the first dielectric wall. The first electric wall has a gradually decreasing width W5 towards a tip of the dielectric wall from a top contact position between the first dielectric wall and either the n-type source/drain region or the p-type source/drain region.
    Type: Application
    Filed: February 15, 2023
    Publication date: April 11, 2024
    Inventors: Ta-Chun LIN, Ming-Che CHEN, Yu-Hsuan LU, Chih-Hao CHANG
  • Patent number: 11954259
    Abstract: Glasses with gesture recognition function include a glasses frame and a gesture recognition system. The gesture recognition system is disposed on the glasses frame and configured to detect hand gestures in front of the glasses thereby generating a control command. The gesture recognition system transmits the control command to an electronic device to correspondingly control the electronic device.
    Type: Grant
    Filed: March 8, 2021
    Date of Patent: April 9, 2024
    Assignee: PIXART IMAGING INC.
    Inventors: Horng-Goung Lai, En-Feng Hsu, Meng-Huan Hsieh, Yu-Hao Huang, Nien-Tse Chen
  • Patent number: 11953052
    Abstract: A fastener is adapted for assembling a first housing to a second housing. The first housing is provided with a protruding portion and a buckling portion, and the second housing has a first surface, a second surface, and a through hole. The fastener includes a first portion, at least one connecting portion, at least two elastic portions, and a second portion. The first portion movably abuts against the first surface and has a first opening. The connecting portion is accommodated in the through hole. One end of the connecting portion is connected to the first portion. The connecting portion is spaced apart from an inner edge of the second housing by a gap. The two elastic portions inclinedly extend into the first opening. The second portion movably abuts against the second surface and is disposed at the another end of the connecting portion.
    Type: Grant
    Filed: June 17, 2021
    Date of Patent: April 9, 2024
    Assignee: PEGATRON CORPORATION
    Inventors: Jian-Hua Chen, Po-Tsung Shih, Yu-Wei Lin, Ming-Hua Ho, Chih-Hao Wu
  • Publication number: 20240112924
    Abstract: An integrated circuit package including integrated circuit dies with slanted sidewalls and a method of forming are provided. The integrated circuit package may include a first integrated circuit die, a first gap-fill dielectric layer around the first integrated circuit die, a second integrated circuit die underneath the first integrated circuit die, and a second gap-fill dielectric layer around the second integrated circuit die. The first integrated circuit die may include a first substrate, wherein a first angle is between a first sidewall of the first substrate and a bottom surface of the first substrate, and a first interconnect structure on the bottom surface of the first substrate, wherein a second angle is between a first sidewall of the first interconnect structure and the bottom surface of the first substrate. The first angle may be larger than the second angle.
    Type: Application
    Filed: January 5, 2023
    Publication date: April 4, 2024
    Inventors: Hsu-Hsien Chen, Chen-Shien Chen, Ting Hao Kuo, Chi-Yen Lin, Yu-Chih Huang
  • Patent number: 11948904
    Abstract: A die includes a substrate, a conductive pad, a connector and a protection layer. The conductive pad is disposed over the substrate. The connector is disposed on the conductive pad. The connector includes a seed layer and a conductive post. The protection layer laterally covers the connector. Topmost surfaces of the seed layer and the conductive post and a top surface of the protection layer are level with each other.
    Type: Grant
    Filed: March 21, 2022
    Date of Patent: April 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei-Chih Chen, Hung-Jui Kuo, Yu-Hsiang Hu, Sih-Hao Liao
  • Patent number: 11948863
    Abstract: A package structure and method of forming the same are provided. The package structure includes a polymer layer, a redistribution layer, a die, and an adhesion promoter layer. The redistribution layer is disposed over the polymer layer. The die is sandwiched between the polymer layer and the redistribution layer. The adhesion promoter layer, an oxide layer, a through via, and an encapsulant are sandwiched between the polymer layer and the redistribution layer. The encapsulant is laterally encapsulates the die. The through via extends through the encapsulant. The adhesion promoter layer and the oxide layer are laterally sandwiched between the through via and the encapsulant. A bottom portion of the encapsulant is longitudinally sandwiched between the adhesion promoter layer and the polymer layer.
    Type: Grant
    Filed: February 8, 2023
    Date of Patent: April 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Chun Cho, Hung-Jui Kuo, Yu-Hsiang Hu, Sih-Hao Liao, Wei-Chih Chen
  • Publication number: 20240106757
    Abstract: A method of wireless signal transmission management includes transmitting a plurality of data packets to tethering equipment from user equipment to tethering equipment, determining a size of each of the plurality of data packets by the tethering equipment, designating data packets of the plurality of data packets having a specific range of sizes as control signal packets by the tethering equipment, and prioritizing in transmitting the control signal packets to a cellular network by the tethering equipment.
    Type: Application
    Filed: September 21, 2023
    Publication date: March 28, 2024
    Applicant: MEDIATEK INC.
    Inventors: Ching-Hao Lee, Yi-Lun Chen, Ho-Wen Pu, Yu-Yu Hung, Jun-Yi Li, Ting-Sheng Lo
  • Publication number: 20240093364
    Abstract: A defect-reducing coating method is disclosed, which is characterized by making the coating surface of a sample face the bottom of the coating chamber, so that the sticking particles on side walls of the coating chamber will not fall on the coating surface of the sample during the coating process, thereby a smooth coating layer can be formed on the coating surface of the sample after the coating process is finished.
    Type: Application
    Filed: November 21, 2022
    Publication date: March 21, 2024
    Applicant: MSSCORPS CO., LTD.
    Inventors: CHI-LUN LIU, JUNG-CHIN CHEN, BANG-HAO HUANG, YU-HAN CHEN, LIKO HSU
  • Publication number: 20240077519
    Abstract: A probe card, a method for designing the probe card, a method for producing a tested semiconductor device, a method for testing an unpackaged semiconductor by the probe card, a device under test, and a probe system are provided. The probe card includes a wiring substrate, a connection carrier board, and a probe device. At least two probes form a differential pair electrically connected to a loopback line of the connection carrier board to form a test signal loopback path. The probe device has a probe device impedance on the test signal loopback path. The loopback line has a loopback line impedance on the test signal loopback path. A difference between the probe device impedance on the test signal loopback path and the loopback line impedance on the test signal loopback path is in an impedance range.
    Type: Application
    Filed: September 6, 2023
    Publication date: March 7, 2024
    Inventors: Yang-Hung Cheng, Yu-Hao Chen, Jhin-Ying Lyu, Hao Wei
  • Publication number: 20240071833
    Abstract: The present disclosure relates to a semiconductor device with a hybrid fin-dielectric region. The semiconductor device includes a substrate, a source region and a drain region laterally separated by a hybrid fin-dielectric (HFD) region. A gate electrode is disposed above the HFD region and the HFD region includes a plurality of fins covered by a dielectric and separated from the source region and the drain region by the dielectric.
    Type: Application
    Filed: August 25, 2022
    Publication date: February 29, 2024
    Inventors: Yi-Huan Chen, Huan-Chih Yuan, Yu-Chang Jong, Scott Yeh, Fei-Yun Chen, Yi-Hao Chen, Ting-Wei Chou
  • Publication number: 20240071953
    Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.
    Type: Application
    Filed: November 6, 2023
    Publication date: February 29, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kai-Ming Chiang, Chao-wei Li, Wei-Lun Tsai, Chia-Min Lin, Yi-Da Tsai, Sheng-Feng Weng, Yu-Hao Chen, Sheng-Hsiang Chiu, Chih-Wei Lin, Ching-Hua Hsieh
  • Publication number: 20240071954
    Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.
    Type: Application
    Filed: November 9, 2023
    Publication date: February 29, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kai-Ming Chiang, Chao-wei Li, Wei-Lun Tsai, Chia-Min Lin, Yi-Da Tsai, Sheng-Feng Weng, Yu-Hao Chen, Sheng-Hsiang Chiu, Chih-Wei Lin, Ching-Hua Hsieh
  • Patent number: 11913472
    Abstract: A centrifugal heat dissipation fan including a housing and an impeller disposed in the housing on an axis is provided. The housing has at least one inlet on the axis and has a plurality of outlets in different radial directions. A heat dissipation system of an electronic device is also provided.
    Type: Grant
    Filed: April 6, 2021
    Date of Patent: February 27, 2024
    Assignee: Acer Incorporated
    Inventors: Tsung-Ting Chen, Wen-Neng Liao, Cheng-Wen Hsieh, Yu-Ming Lin, Wei-Chin Chen, Chun-Chieh Wang, Shu-Hao Kuo
  • Publication number: 20240045322
    Abstract: A method for making a IC is provided, including: identifying, in a schematic, first and second edge elements, which edge elements including devices whose layout patterns are configured to conform to a first layout grid; identifying all the elements between the first and second edge elements, at least one of the identified elements including a device whose layout pattern is configured to conform to a second layout grid that is finer than the first layout grid; and calculating a spatial quantity of a combined layout pattern of the identified elements between the first and second edge elements to determine whether the combined layout pattern conforms to the first layout grid.
    Type: Application
    Filed: October 20, 2023
    Publication date: February 8, 2024
    Inventors: YU-HAO CHEN, HUI-YU LEE, JUI-FENG KUAN, CHIEN-TE WU
  • Publication number: 20240021441
    Abstract: A method includes forming a package, which includes forming a plurality of redistribution lines over a carrier, and forming a thermal dissipation block over the carrier. The plurality of redistribution lines and the thermal dissipation block are formed by common processes. The thermal dissipation block has a first metal density, and the plurality of redistribution lines have a second metal density smaller than the first metal density. The method further includes forming a metal post over the carrier, placing a device die directly over the thermal dissipation block, and encapsulating the device die and the metal post in an encapsulant. The package is then de-bonded from the carrier.
    Type: Application
    Filed: July 24, 2023
    Publication date: January 18, 2024
    Inventors: Ching-Yi Lin, Yu-Hao Chen, Fong-Yuan Chang, Po-Hsiang Huang, Jyh Chwen Frank Lee, Shuo-Mao Chen
  • Patent number: 11855006
    Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.
    Type: Grant
    Filed: July 29, 2021
    Date of Patent: December 26, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kai-Ming Chiang, Chao-wei Li, Wei-Lun Tsai, Chia-Min Lin, Yi-Da Tsai, Sheng-Feng Weng, Yu-Hao Chen, Sheng-Hsiang Chiu, Chih-Wei Lin, Ching-Hua Hsieh
  • Patent number: 11852967
    Abstract: A method for making a IC is provided, including: identifying, in a schematic, first and second edge elements, which edge elements including devices whose layout patterns are configured to conform to a first layout grid; identifying all the elements between the first and second edge elements, at least one of the identified elements including a device whose layout pattern is configured to conform to a second layout grid that is finer than the first layout grid; and calculating a spatial quantity of a combined layout pattern of the identified elements between the first and second edge elements to determine whether the combined layout pattern conforms to the first layout grid.
    Type: Grant
    Filed: March 23, 2021
    Date of Patent: December 26, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Yu-Hao Chen, Hui-Yu Lee, Jui-Feng Kuan, Chien-Te Wu
  • Publication number: 20230385515
    Abstract: Silicon Photonics (SiPh) device methods and systems include providing a PDK cell library with parameters for standard SiPh device parameterized cells (Pcells). A custom SiPh layout that includes a plurality of dummy layers defining a custom SiPh device Pcell is created. A schematic including a plurality of the standard SiPh device Pcells and the custom SiPh device Pcell is created, as well as a configuration database correlating the standard SiPh device Pcells and the custom SiPh Pcell to the schematic. The standard SiPh device Pcells and the custom SiPh Pcell are automatically placed and routed based on the configuration database. A plurality of LVS rules are determined based on the dummy layers, and conducting an LVS verification is conducted based on the LVS rules.
    Type: Application
    Filed: January 18, 2023
    Publication date: November 30, 2023
    Inventors: Feng-Wei KUO, Yu-Hao CHEN
  • Patent number: D1018441
    Type: Grant
    Filed: September 23, 2020
    Date of Patent: March 19, 2024
    Assignee: Cheng Shin Rubber Industrial Co., Ltd.
    Inventors: Yu Chieh Chen, Yu Shiuan Lin, Chia Hao Chang, Ku Wei Liao, Yi Ru Chen