Patents by Inventor Yu-Hao Hsu
Yu-Hao Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11727972Abstract: A memory device is disclosed. The memory device includes word lines, a tracking bit line and a word line driver. The word lines are configured to transmit word line signals to memory cells. The tracking bit line is coupled to a first plurality of tracking cells that are arranged in rows. The word line driver is coupled to the word lines and a control circuit that is coupled through the tracking bit line to the word lines. The word line driver is configured to control a falling edge of each of the word line signals, by receiving each corresponding tracking bit line signal of tracking bit line signals transmitted from the tracking bit line, based on a resistance of a length of the tracking bit line. The length is substantially distanced from each corresponding row of the rows to the control circuit. A method is also disclosed herein.Type: GrantFiled: August 27, 2021Date of Patent: August 15, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Tsung-Hsien Huang, Wei-Jer Hsieh, Yu-Hao Hsu
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Publication number: 20230245696Abstract: A memory device includes a memory cell array including a plurality of bit cells, each of the bit cells coupled to one of a plurality of bit lines and one of a plurality of word lines, respectively, wherein each of the plurality of bit cells is configured to: present an initial logic state during a random number generator (RNG) phase; and operate as a memory cell at a first voltage level during a SRAM phase; and a controller controlling bit line signals on the plurality of bit lines and word line signals on the plurality of word lines, wherein the controller is configured to: during the RNG phase, precharge the plurality of bit lines to a second voltage level, and determine the initial logic states of the plurality of bit cells to generate at least one random number, wherein the second voltage level is lower than the first voltage level.Type: ApplicationFiled: April 10, 2023Publication date: August 3, 2023Inventors: Jui-Che Tsai, Chen-Lin Yang, Yu-Hao Hsu, Shih-Lien Linus Lu
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Publication number: 20230185324Abstract: Disclosed herein are related to an integrated circuit to regulate a supply voltage. In one aspect, the integrated circuit includes a metal rail including a first point, at which a first functional circuit is connected, and a second point, at which a second functional circuit is connected. In one aspect, the integrate circuit includes a voltage regulator coupled between the first point of the metal rail and the second point of the metal rail. In one aspect, the voltage regulator senses a voltage at the second point of the metal rail and adjusts a supply voltage at the first point of the metal rail, according to the sensed voltage at the second point of the metal rail.Type: ApplicationFiled: February 6, 2023Publication date: June 15, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Haruki Mori, Hidehiro Fujiwara, Zhi-Hao Chang, Yangsyu Lin, Yu-Hao Hsu, Yen-Huei Chen, Hung-Jen Liao, Chiting Cheng
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Patent number: 11675505Abstract: Various embodiments for configurable memory storage systems are disclosed. The configurable memory storages selectively choose an operational voltage signal from among multiple voltage signals to dynamically control various operational parameters. For example, the configurable memory storages selectively choose a maximum voltage signal from among the multiple voltage signals to maximize read/write speed. As another example, the configurable memory storages selectively choose a minimum voltage signal from among the multiple voltage signals to minimize power consumption.Type: GrantFiled: April 11, 2022Date of Patent: June 13, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Hao Hsu, Cheng Hung Lee, Chen-Lin Yang, Chiting Cheng, Fu-An Wu, Hung-Jen Liao, Jung-Ping Yang, Jonathan Tsung-Yung Chang, Wei Min Chan, Yen-Huei Chen, Yangsyu Lin, Chien-Chen Lin
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Patent number: 11664770Abstract: The invention provides method and associated controller for improving temperature adaptability of an amplifier; the method may include: receiving a temperature value, and adjusting a supply voltage supplied to the amplifier according to the temperature value.Type: GrantFiled: September 24, 2020Date of Patent: May 30, 2023Assignee: MEDIATEK INC.Inventors: Yu-Hao Hsu, Shan-Chi Yang
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Patent number: 11626157Abstract: A memory device includes a memory cell array including a plurality of bit cells, each of the bit cells coupled to one of a plurality of bit lines and one of a plurality of word lines, respectively, wherein each of the plurality of bit cells is configured to: present an initial logic state during a random number generator (RNG) phase; and operate as a memory cell at a first voltage level during a SRAM phase; and a controller controlling bit line signals on the plurality of bit lines and word line signals on the plurality of word lines, wherein the controller is configured to: during the RNG phase, precharge the plurality of bit lines to a second voltage level, and determine the initial logic states of the plurality of bit cells to generate at least one random number, wherein the second voltage level is lower than the first voltage level.Type: GrantFiled: June 28, 2021Date of Patent: April 11, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jui-Che Tsai, Chen-Lin Yang, Yu-Hao Hsu, Shih-Lien Linus Lu
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Publication number: 20230064595Abstract: A memory device is disclosed. The memory device includes word lines, a tracking bit line and a word line driver. The word lines are configured to transmit word line signals to memory cells. The tracking bit line is coupled to a first plurality of tracking cells that are arranged in rows. The word line driver is coupled to the word lines and a control circuit that is coupled through the tracking bit line to the word lines. The word line driver is configured to control a falling edge of each of the word line signals, by receiving each corresponding tracking bit line signal of tracking bit line signals transmitted from the tracking bit line, based on a resistance of a length of the tracking bit line. The length is substantially distanced from each corresponding row of the rows to the control circuit. A method is also disclosed herein.Type: ApplicationFiled: August 27, 2021Publication date: March 2, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Tsung-Hsien HUANG, Wei-Jer HSIEH, Yu-Hao HSU
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Publication number: 20230053795Abstract: A bit line is pre-charged based on a clock signal internal to a bit line pre-charge circuit when a bit line pre-charge window is within a margin of a predetermined pre-charge window. A bit line is pre-charged based on a clock signal external to the bit line pre-charge circuit when the bit line pre-charge window is outside the margin of the predetermined pre-charge window.Type: ApplicationFiled: August 23, 2022Publication date: February 23, 2023Inventors: Che-Ju Yeh, Yu-Hao Hsu, Hau-Tai Shieh, Cheng Lee
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Publication number: 20230054498Abstract: The present disclosure describes an example circuit for selecting a voltage supply. The circuit includes a first control switch, a first voltage supply switch, a second control switch, and a second voltage supply switch. The first control switch is configured to receive a control signal and a first voltage supply. The first voltage supply switch is electrically coupled to the first control switch and is configured to receive a second voltage supply. The second voltage supply switch is electrically coupled to the second control switch and configured to receive the first voltage supply. The first and second voltage supply switches are configured to selectively output the first and second voltage supplies based on the control signal.Type: ApplicationFiled: August 19, 2021Publication date: February 23, 2023Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chia-Chen KUO, Yangsyu LIN, Yu-Hao HSU, Cheng Hung LEE, Hung-Jen LIAO, Jonathan Tsung-Yung CHANG
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Patent number: 11579648Abstract: Disclosed herein are related to an integrated circuit to regulate a supply voltage. In one aspect, the integrated circuit includes a metal rail including a first point, at which a first functional circuit is connected, and a second point, at which a second functional circuit is connected. In one aspect, the integrate circuit includes a voltage regulator coupled between the first point of the metal rail and the second point of the metal rail. In one aspect, the voltage regulator senses a voltage at the second point of the metal rail and adjusts a supply voltage at the first point of the metal rail, according to the sensed voltage at the second point of the metal rail.Type: GrantFiled: November 24, 2021Date of Patent: February 14, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Haruki Mori, Hidehiro Fujiwara, Zhi-Hao Chang, Yangsyu Lin, Yu-Hao Hsu, Yen-Huei Chen, Hung-Jen Liao, Chiting Cheng
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Publication number: 20230041094Abstract: A memory device and a method of operating the memory device are disclosed. In one aspect, the memory device includes a word line driver connected to a word line, a row of memory cells connected to the word line, each memory cell powered by a first supply voltage, and a power circuit. The power circuit is configured to provide the first supply voltage to the word line driver when a read condition is satisfied, and a second supply voltage to the word line driver when the read condition is not satisfied, the second supply voltage being less than the first supply voltage.Type: ApplicationFiled: February 11, 2022Publication date: February 9, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tsung-Hsien Huang, Wei-jer Hsieh, Tsung-Yuan Huang, Yu-Hao Hsu
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Publication number: 20220276691Abstract: A circuit includes a power detector and a logic circuit. The power detector is configured to output a first power management signal according to a first power supply signal from a first power supply and a status signal. The circuit is configured to operate in different modes in response to the status signal. The logic circuit is configured to output a second power management signal, according to the first power management signal and the status signal.Type: ApplicationFiled: August 24, 2021Publication date: September 1, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Chen KUO, Yangsyu LIN, Yu-Hao HSU, Cheng Hung LEE, Hung-Jen LIAO
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Publication number: 20220270674Abstract: A memory device includes a plurality of memory cells; a word line, connected to one of the plurality of memory cells, that is configured to provide a first WL pulse having a rising edge and a falling edge that define a pulse width of the first WL pulse; a first tracking WL, formed adjacent to the memory cells, that is configured to provide, via being physically or operatively coupled to a bit line (BL) configured to write a logic state to the memory cell, a second WL pulse having a rising edge with a decreased slope; and a first tracking BL, configured to emulate the BL, that is coupled to the first tracking WL such that the pulse width of the first WL pulse is increased based on the decreased slope of the rising edge of the second WL pulse.Type: ApplicationFiled: May 12, 2022Publication date: August 25, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-jer Hsieh, Yu-Hao Hsu, Zhi-Hao Chang, Cheng Hung Lee
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Patent number: 11423962Abstract: A bit line is pre-charged based on a clock signal internal to a bit line pre-charge circuit when a bit line pre-charge window is within a margin of a predetermined pre-charge window. A bit line is pre-charged based on a clock signal external to the bit line pre-charge circuit when the bit line pre-charge window is outside the margin of the predetermined pre-charge window.Type: GrantFiled: May 27, 2021Date of Patent: August 23, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, ltd.Inventors: Che-Ju Yeh, Yu-Hao Hsu, Hau-Tai Shieh, Cheng Lee
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Publication number: 20220254385Abstract: Memory devices are disclosed that support multiple power ramping sequences or modes. For example, a level shifter device is operably connected to a memory macro in a memory device. The level shifter device receives at least one gating signal. Based on a state of the at least one gating signal, the level shifter device outputs one or more signals that cause or control voltage signals in or received by the memory macro to ramp up, ramp down, or ramp up and ramp down according to one or more power ramping modes.Type: ApplicationFiled: November 9, 2021Publication date: August 11, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Ching Chang, Yangsyu Lin, Yu-Hao Hsu, Cheng Lee
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Publication number: 20220236894Abstract: Various embodiments for configurable memory storage systems are disclosed. The configurable memory storages selectively choose an operational voltage signal from among multiple voltage signals to dynamically control various operational parameters. For example, the configurable memory storages selectively choose a maximum voltage signal from among the multiple voltage signals to maximize read/write speed. As another example, the configurable memory storages selectively choose a minimum voltage signal from among the multiple voltage signals to minimize power consumption.Type: ApplicationFiled: April 11, 2022Publication date: July 28, 2022Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Hao HSU, Cheng Hung LEE, Chen-Lin YANG, Chiting CHENG, Fu-An WU, Hung-Jen LIAO, Jung-Ping YANG, Jonathan Tsung-Yung CHANG, Wei Min CHAN, Yen-Huei CHEN, Yangsyu LIN, Chien-Chen LIN
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Patent number: 11355183Abstract: A memory device includes a plurality of memory cells; a word line, connected to one of the plurality of memory cells, that is configured to provide a first WL pulse having a rising edge and a falling edge that define a pulse width of the first WL pulse; a first tracking WL, formed adjacent to the memory cells, that is configured to provide, via being physically or operatively coupled to a bit line (BL) configured to write a logic state to the memory cell, a second WL pulse having a rising edge with a decreased slope; and a first tracking BL, configured to emulate the BL, that is coupled to the first tracking WL such that the pulse width of the first WL pulse is increased based on the decreased slope of the rising edge of the second WL pulse.Type: GrantFiled: August 25, 2020Date of Patent: June 7, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDInventors: Wei-jer Hsieh, Yu-Hao Hsu, Zhi-Hao Chang, Cheng Hung Lee
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Patent number: 11301148Abstract: Various embodiments for configurable memory storage systems are disclosed. The configurable memory storages selectively choose an operational voltage signal from among multiple operational voltage signals to dynamically control various operational parameters. For example, the configurable memory storages selectively choose a maximum operational voltage signal from among the multiple operational voltage signals to maximize read/write speed. As another example, the configurable memory storages selectively choose a minimum operational voltage signal from among the multiple operational voltage signals to minimize power consumption.Type: GrantFiled: March 15, 2021Date of Patent: April 12, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Hao Hsu, Cheng Hung Lee, Chen-Lin Yang, Chiting Cheng, Fu-An Wu, Hung-Jen Liao, Jung-Ping Yang, Jonathan Tsung-Yung Chang, Wei Min Chan, Yen-Huei Chen, Yangsyu Lin, Chien-Chen Lin
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Publication number: 20220083089Abstract: Disclosed herein are related to an integrated circuit to regulate a supply voltage. In one aspect, the integrated circuit includes a metal rail including a first point, at which a first functional circuit is connected, and a second point, at which a second functional circuit is connected. In one aspect, the integrate circuit includes a voltage regulator coupled between the first point of the metal rail and the second point of the metal rail. In one aspect, the voltage regulator senses a voltage at the second point of the metal rail and adjusts a supply voltage at the first point of the metal rail, according to the sensed voltage at the second point of the metal rail.Type: ApplicationFiled: November 24, 2021Publication date: March 17, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Haruki Mori, Hidehiro Fujiwara, Zhi-Hao Chang, Yangsyu Lin, Yu-Hao Hsu, Yen-Huei Chen, Hung-Jen Liao, Chiting Cheng
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Publication number: 20220068372Abstract: A memory device includes a plurality of memory cells; a word line, connected to one of the plurality of memory cells, that is configured to provide a first WL pulse having a rising edge and a falling edge that define a pulse width of the first WL pulse; a first tracking WL, formed adjacent to the memory cells, that is configured to provide, via being physically or operatively coupled to a bit line (BL) configured to write a logic state to the memory cell, a second WL pulse having a rising edge with a decreased slope; and a first tracking BL, configured to emulate the BL, that is coupled to the first tracking WL such that the pulse width of the first WL pulse is increased based on the decreased slope of the rising edge of the second WL pulse.Type: ApplicationFiled: August 25, 2020Publication date: March 3, 2022Inventors: Wei-jer Hsieh, Yu-Hao Hsu, Zhi-Hao Chang, Cheng Hung Lee