Abstract: Glasses with gesture recognition function include a glasses frame and a gesture recognition system. The gesture recognition system is disposed on the glasses frame and configured to detect hand gestures in front of the glasses thereby generating a control command. The gesture recognition system transmits the control command to an electronic device to correspondingly control the electronic device.

Abstract: In an embodiment, a device includes: a package component including: integrated circuit dies; an encapsulant around the integrated circuit dies; a redistribution structure over the encapsulant and the integrated circuit dies, the redistribution structure being electrically coupled to the integrated circuit dies; sockets over the redistribution structure, the sockets being electrically coupled to the redistribution structure; and a support ring over the redistribution structure and surrounding the sockets, the support ring being disposed along outermost edges of the redistribution structure, the support ring at least partially laterally overlapping the redistribution structure.

Abstract: Glasses with gesture recognition function include a glasses frame and a gesture recognition system. The gesture recognition system is disposed on the glasses frame and configured to detect hand gestures in front of the glasses thereby generating a control command. The gesture recognition system transmits the control command to an electronic device to correspondingly control the electronic device.

Abstract: A semiconductor structure includes a functional die, a dummy die, a redistribution structure, a seal ring and an alignment mark. The dummy die is electrically isolated from the functional die. The redistribution structure is disposed over and electrically connected to the functional die. The seal ring is disposed over the dummy die. The alignment mark is between the seal ring and the redistribution structure, wherein the alignment mark is electrically isolated from the dummy die, the redistribution structure and the seal ring. The insulating layer encapsulates the functional die and the dummy die.

Abstract: A memory device and a method for manufacturing the memory device are provided. The memory device includes a stack and a plurality of memory strings. The stack is disposed on the substrate, and the stack includes a plurality of conductive layers and a plurality of insulating layers alternately stacked. The memory strings pass through the stack along a first direction, wherein a first memory string in the memory strings includes a first conductive pillar and a second conductive pillar, a channel layer, and a memory structure. The first conductive pillar and the second conductive pillar respectively extend along the first direction and are separated from each other. The channel layer is disposed between the first conductive pillar and the second conductive pillar. The memory structure surrounds the second conductive pillar, and the memory structure includes a resistive memory material.

Abstract: A shielding film includes an insulation layer, a conductive shielding layer and an adhesive layer; and is manufactured in a method including the steps of connecting a conductive shielding layer to a substrate material and forming a plurality of cavities on them; forming an insulation layer on the conductive shielding layer to fill up all the cavities; forming a carrier film on a top of the insulation layer; removing the substrate material from the conductive shielding layer, such that a plurality of downward protruded metal grounding electrodes are formed on a lower side of the conductive shielding layer corresponding to the cavities; and providing an adhesive layer on the lower side of the conductive shielding layer, such that the metal grounding electrodes are exposed from the adhesive layer to present a geometric pattern. The produced shielding film shows good grounding effect and bonding strength to ensure enhanced electromagnetic shielding effect.

Abstract: A shielding film includes an insulation layer, a conductive shielding layer and an adhesive layer; and is manufactured in a method including the steps of connecting a conductive shielding layer to a substrate material and forming a plurality of cavities on them; forming an insulation layer on the conductive shielding layer to fill up all the cavities; forming a carrier film on a top of the insulation layer; removing the substrate material from the conductive shielding layer, such that a plurality of downward protruded metal grounding electrodes are formed on a lower side of the conductive shielding layer corresponding to the cavities; and providing an adhesive layer on the lower side of the conductive shielding layer, such that the metal grounding electrodes are exposed from the adhesive layer to present a geometric pattern. The produced shielding film shows good grounding effect and bonding strength to ensure enhanced electromagnetic shielding effect.

Abstract: A method of manufacturing touch sensing electrode structure includes the steps of selecting a predetermined substrate material to form a substrate layer; forming at least one adhesion layer on the substrate layer; forming a masking layer with recessed lines on the adhesion layer; forming metal conductive electrodes in the recessed lines on the masking layer; removing the masking layer for the metal conductive electrodes to present a circuit pattern and etching off portions of the adhesion layer located between the metal conductive electrodes; and forming at least one weatherproof layer on peripheral surfaces of the metal conductive electrodes. The touch sensing electrode structure manufactured according to the above method has high yield rate and is weatherproof, and the metal conductive electrodes thereof have precisely controlled small width.

Abstract: A conductive electrode structure includes a substrate layer; at least one adhesion layer formed on the substrate layer for forming a circuit pattern; a conductive electrode layer formed on the adhesion layer for forming a conducting circuit corresponding to the circuit pattern; a first blackened layer formed on the conductive electrode layer corresponding to the circuit pattern and manufactured with an easily etched material; and a weatherproof layer formed on the first blackened layer and manufactured with an etch-resistant material. The weatherproof layer has a thickness smaller than the first blackened layer. The first blackened layer has a dark color for absorbing and stopping light from entering into the conductive electrode layer, and accordingly forms a shielding surface that prevents the conductive electrode layer from being directly visually perceived by a user. The conductive electrode structure also avoids side etching of the conductive electrode layer to ensure increased yield rate.

Abstract: A manufacturing method of thin film transistors is provided. The manufacturing method includes: providing a substrate; forming a gate electrode; forming a gate insulating layer; forming a patterned oxide semiconductor layer; forming a source electrode and a drain electrode; and executing a localized laser treatment. A laser beam is used to irradiate at least a part of the patterned oxide semiconductor layer in the localized laser treatment. An electrical resistitivity of the patterned oxide semiconductor layer irradiated by the laser beam is lower than an electrical resistitivity of the patterned oxide semiconductor layer without being irradiated by the laser beam.