Abstract: In a method of manufacturing a semiconductor device, a fin structure is formed by patterning a semiconductor layer, and an annealing operation is performed on the fin structure. In the patterning of the semiconductor layer, a damaged area is formed on a sidewall of the fin structure, and the annealing operation eliminates the damaged area.

Abstract: In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus are provided. The apparatus may be a UE. The UE sends a request message to a core network. The request message requests joining one or more requested multicast broadcast service (MBS) sessions. The UE receives a response message from the core network. The response message contains received MBS information indicating one or more admitted MBS sessions. The received MBS information includes a respective IP address type (IPAT) field. The IPAT field indicates a type of an IP address corresponding to each of the one or more admitted MBS sessions. The UE decodes the IP address corresponding to each of the one or more admitted MBS sessions according to the type indicated by the respective IPAT field.

Abstract: A Ceramic substrate is provided. The ceramic substrate includes a ceramic main body and a planar buffer layer on the ceramic main body. Further, the coefficient of thermal expansion of the ceramic main body CTEm and the coefficient of thermal expansion of the planar buffer layer CTEp satisfy the following mathematical relationship: |CTEm?CTEp|?3×10?6/° C.

Abstract: A ceramic powder composition and an optoelectronic device substrate utilizing the ceramic powder composition are disclosed. The optoelectronic device substrate is formed by sintering a ceramic powder composition including 4 to 97 wt % (weight percent) of zircon, 0 to 60 wt % of silicon dioxide, and 0 to 80 wt % of alumina, wherein the sintered ceramic substrate includes first and second crystalline phases, the first crystalline phase is zircon, and the second crystalline phase is at least one of or a combination of alumina, silicon dioxide, and zirconia crystalline phases, furthermore, the second crystalline phase can also includes a mullite crystalline phase.

Abstract: A Ceramic substrate is provided. The ceramic substrate includes a ceramic main body and a planar buffer layer on the ceramic main body. Further, the coefficient of thermal expansion of the ceramic main body CTEm and the coefficient of thermal expansion of the planar buffer layer CTEp satisfy the following mathematical relationship: |CTEm?CTEp|?3×10?6/° C.

Abstract: A photoelectric converting device which includes a substrate layer and an active layer is proposed. The active layer, which is disposed over the substrate layer, has a light receiving surface with a textured structure. The textured structure includes multiple indented units and each of the indented units includes three planes, which form an indentation tip at the intersection point between the three planes. The three planes are perpendicular or about perpendicular to each other.