Abstract: Provided is a high ruggedness heterojunction bipolar transistor (HBT), including a collector layer. The collector layer includes a InGaP layer or a wide bandgap layer. The bandgap of the InGaP layer is greater than 1.86 eV.

Abstract: The present invention is a semiconductor device having a defect blocking region. The semiconductor device includes a substrate, a defect source region, a semiconductor layer and a defect blocking region. The defect source region is on the substrate, wherein the defect source region is a metamorphic buffer layer or a buffer layer, the semiconductor layer over the defect source region, wherein a lattice constant of the semiconductor layer is different from a lattice constant of the substrate. The defect blocking region is disposed on the substrate and below the semiconductor layer, wherein the defect blocking region includes a superlattice structure, wherein at least one of two adjacent layers of the superlattice structure has strain relative to the semiconductor layer, or a lattice constant of the superlattice structure is close to or equal to the lattice constant of the semiconductor layer.

Abstract: A heterojunction bipolar transistor structure is provided, including a substrate and a multi-layer structure formed on the substrate. The multi-layer structure includes a current clamping layer, and the current clamping layer can be disposed in a collector layer, disposed in a sub-collector layer, or interposed between a collector layer and a sub-collector layer. An electron affinity of the current clamping layer is less than an electron affinity of an epitaxial layer formed on the current clamping layer.

Abstract: Disclosed is a fuser member comprising a substrate, a layer thereover comprising a polymer, and, on the polymeric layer, a coating of a release agent comprising polyorganosiloxanes having tertiary amino functional groups on at least some of the molecules thereof.

Abstract: Disclosed is a fuser member comprising a substrate, a layer thereover comprising a polymer, and, on the polymeric layer, a coating of a release agent comprising polyorganosiloxanes having tertiary amino functional groups on at least some of the molecules thereof.

Abstract: Disclosed is a fuser member comprising a substrate, a layer thereover comprising a polymer, and, on the polymeric layer, a coating of a release agent comprising polyorganosiloxanes having tertiary amino functional groups on at least some of the molecules thereof.

Abstract: The present invention relates to a fuser member useful in electrostatographic, including digital apparatuses, the fuser member having a) a substrate, and b) a thermally conductive fusing layer with a fluoropolymer, a micron-sized alumina, a high surface area alumina having a particle size smaller than that of the micron-sized alumina, and crosslinked silicone particles.

Abstract: A hard, long wearing, thermally conductive fuser member comprising a base member and a surface layer wherein said surface layer includes a fluoroelastomer and an alumina filler having an average particle size of from about 0.5 to about 15 micrometers, said alumina being present in an amount to provide a thermal conductivity of at least about 0.24 watts/meter .degree.Kelvin in said surface layer.