Abstract: A light-emitting device, including a first type semiconductor layer, a patterned insulating layer, a light-emitting layer, and a second type semiconductor layer, is provided. The patterned insulating layer covers the first type semiconductor layer and has a plurality of insulating openings. The insulating openings are separated from each other. The light-emitting layer is located in the plurality of insulating openings and covers a portion of the first type semiconductor layer. The second type semiconductor layer is located on the light-emitting layer.

Abstract: A semiconductor device is disclosed herein. The semiconductor device includes a routing structure. The routing structure has an intermediate conductive routing layer. The intermediate conductive routing layer includes a first mesh conductive layer formed in a predetermined second region of the semiconductor device and a second mesh conductive layer formed in a predetermined first region of the semiconductor device. The first mesh conductive layer and the second mesh conductive layer are electrically isolated from each other. The intermediate conductive routing layer further includes multiple first conductive islands formed in the predetermined first region and multiple second conductive islands formed in the predetermined second region.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first diffusion barrier layer made of a dielectric material including a metal element, nitrogen, and oxygen and a first protection layer made of a dielectric material including silicon and oxygen and in direct contact with the top surface of the first diffusion barrier layer. The semiconductor device structure also includes a first thickening layer made of a dielectric material including the metal element and oxygen and in direct contact with the top surface of the first protection layer. A maximum metal content in the first thickening layer is greater than that in the first diffusion barrier layer. The semiconductor device structure further includes a conductive feature surrounded by and in direct contact with the first diffusion barrier layer, the first protection layer, and the first thickening layer.

Abstract: A method for separating amorphous iron oxides is provided. The method includes steps of sampling, filtering, dissolving and separating, analyzing the solution containing amorphous radioactive iron oxides and analyzing granules containing crystalline radioactive iron oxides. Characteristics of the radioactive iron oxides during various periods are acquired to solve the radiation buildup problem. Parameters for improving water quality and chemistry performance indicator are thus provided. Crystalline deposits are separated while the dissolving rate of radioactive iron oxides reaches more than 90%. The present invention does not use complex utilities, is easy to use and has a low operation cost for fast analysis.

Abstract: A hot-bar head is adapted for soldering at least two flexible flat cables to a substrate. The hot-bar head includes a head body having a connecting portion that extends in a longitudinal direction, and at least two soldering portions, each of which extends from the connecting portion and has a blade edge adapted for contacting one of the flexible flat cables. Adjacent ones of the soldering portions are spaced apart from each other in the longitudinal direction.