Patents by Inventor Yu-jin Seo
Yu-jin Seo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12004384Abstract: A display device includes a display panel having a general area including first subpixels, and a sensor area including second subpixels and light-transmitting area. Each of the first subpixels and the second subpixels includes a first active layer disposed on a substrate and formed of a first material, a first gate layer disposed on the first active layer, a second gate layer disposed on the first gate layer, a second active layer disposed on the second gate layer and formed of a second material different from the first material, a third gate layer disposed on the second active layer, and a light-blocking layer disposed between the substrate and the first active layer and overlapping the second active layer in a thickness direction.Type: GrantFiled: November 2, 2022Date of Patent: June 4, 2024Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Jun Hyun Park, Hyeong Seok Kim, Young Wan Seo, Yu Jin Lee, Cheol Gon Lee
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Publication number: 20240179433Abstract: Disclosed is an image sensing device including a first clock distributor suitable for receiving a first input clock signal through a first input terminal, and outputting a plurality of first output clock signals through a plurality of first output terminals, and a first conductive line coupled in common to the plurality of first output terminals.Type: ApplicationFiled: February 5, 2024Publication date: May 30, 2024Inventors: Jeong Eun SONG, Min Seok SHIN, Yu Jin PARK, Sung Uk SEO, Sun Young LEE
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Publication number: 20240129648Abstract: An image sensing device includes: a control circuit coupled between an output terminal of a pixel signal and a high voltage terminal, and configured to generate a control voltage corresponding to a voltage level of the pixel signal; and a current supplying circuit coupled between the output terminal and the high voltage terminal, and configured to supply a pre-charge current, which is configured to be adaptively adjusted according to the voltage level of the pixel signal, to the output terminal based on the control voltage.Type: ApplicationFiled: December 21, 2023Publication date: April 18, 2024Inventors: Yu Jin PARK, Nam Ryeol KIM, Kang Bong SEO, Jeong Eun SONG, Jung Soon SHIN, Seung Hwan LEE
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Publication number: 20240118765Abstract: A display device includes: a substrate; a light emitting element layer disposed on the substrate; and a sensor electrode layer disposed on an encapsulation layer and including: a plurality of first touch electrode groups extending along a first direction; a plurality of first touch electrodes, of the plurality of first touch electrode groups, arranged along the first direction; a plurality of second touch electrode groups extending along the second direction and arranged along the first direction; a first contact electrode connected to any one of the plurality of first touch electrodes of any one of the plurality of first touch electrode groups; and a second contact electrode connected to any one of the plurality of first touch electrodes of another of the plurality of first touch electrode groups, and wherein an area of the first contact electrode is greater than an area of the second contact electrode.Type: ApplicationFiled: May 4, 2023Publication date: April 11, 2024Inventors: Jeong Yoon LEE, Ok Kyung Park, Young Seok Seo, Yu Jin Choe
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Patent number: 11950008Abstract: Disclosed is an image sensing device including a first clock distributor suitable for receiving a first input dock signal through a first input terminal, and outputting a plurality of first output clock signals through a plurality of first output terminals, and a first conductive line coupled in common to the plurality of first output terminals.Type: GrantFiled: April 5, 2021Date of Patent: April 2, 2024Assignee: SK hynix Inc.Inventors: Jeong Eun Song, Min Seok Shin, Yu Jin Park, Sung Uk Seo, Sun Young Lee
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Publication number: 20240076468Abstract: An embodiment resin composition for shielding electromagnetic waves, based on a total weight of the resin composition, includes 20 to 80 wt % of thermoplastic resin, 1 to 50 wt % of a conductive filler, and 0.1 to 30 wt % of an additive.Type: ApplicationFiled: January 16, 2023Publication date: March 7, 2024Inventors: Seung-Woo Choi, Dong-Bum Seo, Kyun Oh, Yu-Hyun Song, Yang-Jin Kwon, Joo-Han Lee
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Patent number: 11812609Abstract: A three-dimensional semiconductor device includes first and second extended regions disposed on a substrate spaced apart from each other, a memory block disposed on the substrate between the first and second extended regions, and first and second main separation structures disposed on the substrate spaced apart from each other. The first extended region, the memory block and the second extended region are disposed between the first and second main separation structures. The memory block includes data storage regions and word lines. The word lines extend from the memory block and pass through the first and second extended regions. A distance between the first and second main separation structures located on both sides of the first extended region is greater than a distance between the first and second main separation structures located on both sides of the memory block.Type: GrantFiled: March 31, 2021Date of Patent: November 7, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Byoung Il Lee, Yu Jin Seo, Jun Eon Jin
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Publication number: 20230174470Abstract: The present specification relates to a compound as a UBR box domain ligand. The present specification provides a small molecule compound that binds to the UBR box domain. Further, the present specification provides a composition for inhibiting UBR box domain substrate binding, including a ligand compound that binds to a UBR box domain, a pharmaceutical composition for treating UBR-related disease, and a use thereof.Type: ApplicationFiled: April 27, 2021Publication date: June 8, 2023Inventors: Yong Tae KWON, Hyun Tae KIM, Jeong Eun NA, Yu Jin SEO, Chang Hoon JI, Ha Rim CHOI, Ji Eun LEE, Ah Jung HEO
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Publication number: 20230174465Abstract: The present specification relates to a compound as a UBR box domain ligand. The present specification provides a small molecule compound that binds to the UBR box domain. Further, the present specification provides a composition for inhibiting UBR box domain substrate binding, including a ligand compound that binds to a UBR box domain, a pharmaceutical composition for treating UBR-related disease, and a use thereof.Type: ApplicationFiled: April 27, 2021Publication date: June 8, 2023Inventors: Yong Tae KWON, Hyun Tae KIM, Jeong Eun NA, Yu Jin SEO, Chang Hoon JI, Ha Rim CHOI, Ji Eun LEE, Ah Jung HEO
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Publication number: 20220032300Abstract: A multiplex PCR chip capable of simultaneously detecting multiple target genes and a multiplex PCR method using the same are proposed. More specifically, in the multiplex PCR chip and multiplex PCR method, after a plurality of spatially separated particle-forming grooves is formed in one or more reaction chambers and a probe in a solution state is injected into the particle-forming grooves, planar shapes of the particle-forming grooves are varied or shapes and patterns of particle holders respectively formed on inner surfaces of the particle-forming grooves are varied, and the probe including primers specifically hybridizing with sequences of different nucleic acid molecules is injected into the particle-forming grooves, whereby simultaneous multiplex detection is possible by allowing multiple target genes to be detected on the basis of positions and shapes of the probe particles and the shapes and patterns of the particle holders respectively formed inside of the probe particles.Type: ApplicationFiled: July 29, 2021Publication date: February 3, 2022Applicant: Genesystem Co., Ltd.Inventors: Yu Jin SEO, Ok Ran CHOI, Dobu LEE, Ji Young PARK
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Publication number: 20210242229Abstract: A three-dimensional semiconductor device includes first and second extended regions disposed on a substrate spaced apart from each other, a memory block disposed on the substrate between the first and second extended regions, and first and second main separation structures disposed on the substrate spaced apart from each other. The first extended region, the memory block and the second extended region are disposed between the first and second main separation structures. The memory block includes data storage regions and word lines. The word lines extend from the memory block and pass through the first and second extended regions. A distance between the first and second main separation structures located on both sides of the first extended region is greater than a distance between the first and second main separation structures located on both sides of the memory block.Type: ApplicationFiled: March 31, 2021Publication date: August 5, 2021Inventors: BYOUNG IL LEE, Yu Jin Seo, Jun Eon Jin
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Patent number: 11004866Abstract: A vertical-type memory device includes a substrate having a cell array region and a connection region disposed adjacent to the cell array region, a plurality of gate electrode layers stacked on the cell array region and the connection region, a plurality of channel structures disposed in the cell array region, a plurality of dummy channel structures disposed in the connection region, and a plurality of slits disposed in the plurality of gate electrode layers in the cell array region. The plurality of gate electrode layers forms a stepped structure in the connection region, the plurality of channel structures penetrates the plurality of gate electrode layers, and the plurality of dummy channel structures penetrates at least one of the plurality of gate electrode layers.Type: GrantFiled: February 14, 2020Date of Patent: May 11, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Tak Lee, Su Bin Kang, Ji Mo Gu, Yu Jin Seo, Byoung il Lee, Jun Ho Cha
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Patent number: 10998327Abstract: A semiconductor device includes a stacked structure disposed on a substrate. The stacked structure includes a plurality of gate electrodes. The semiconductor device further includes a first structure disposed on the substrate and passing through the stacked structure, and a second structure disposed on the substrate. The second structure is disposed outside of the stacked structure, faces the first structure, and is spaced apart from the first structure. The first structure includes a plurality of separation lines passing through at least a portion of the plurality of gate electrodes and extending outside of the stacked structure, and the second structure is formed of the same material as the first structure.Type: GrantFiled: December 20, 2018Date of Patent: May 4, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Su Bin Kang, Byoung Il Lee, Ji Mo Gu, Yu Jin Seo, Tak Lee
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Patent number: 10978465Abstract: A three-dimensional semiconductor device includes first and second extended regions disposed on a substrate spaced apart from each other, a memory block disposed on the substrate between the first and second extended regions, and first and second main separation structures disposed on the substrate spaced apart from each other. The first extended region, the memory block and the second extended region are disposed between the first and second main separation structures. The memory block includes data storage regions and word lines. The word lines extend from the memory block and pass through the first and second extended regions. A distance between the first and second main separation structures located on both sides of the first extended region is greater than a distance between the first and second main separation structures located on both sides of the memory block.Type: GrantFiled: December 20, 2018Date of Patent: April 13, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Byoung Il Lee, Yu Jin Seo, Jun Eon Jin
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Publication number: 20200185412Abstract: A vertical-type memory device includes a substrate having a cell array region and a connection region disposed adjacent to the cell array region, a plurality of gate electrode layers stacked on the cell array region and the connection region, a plurality of channel structures disposed in the cell array region, a plurality of dummy channel structures disposed in the connection region, and a plurality of slits disposed in the plurality of gate electrode layers in the cell array region. The plurality of gate electrode layers forms a stepped structure in the connection region, the plurality of channel structures penetrates the plurality of gate electrode layers, and the plurality of dummy channel structures penetrates at least one of the plurality of gate electrode layers.Type: ApplicationFiled: February 14, 2020Publication date: June 11, 2020Inventors: TAK LEE, SU BIN KANG, JI MO GU, YU JIN SEO, BYOUNG iL LEE, JUN HO CHA
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Patent number: 10566346Abstract: A vertical-type memory device includes a substrate having a cell array region and a connection region disposed adjacent to the cell array region, a plurality of gate electrode layers stacked on the cell array region and the connection region, a plurality of channel structures disposed in the cell array region, a plurality of dummy channel structures disposed in the connection region, and a plurality of slits disposed in the plurality of gate electrode layers in the cell array region. The plurality of gate electrode layers forms a stepped structure in the connection region, the plurality of channel structures penetrates the plurality of gate electrode layers, and the plurality of dummy channel structures penetrates at least one of the plurality of gate electrode layers.Type: GrantFiled: August 22, 2018Date of Patent: February 18, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Tak Lee, Su Bin Kang, Ji Mo Gu, Yu Jin Seo, Byoung Il Lee, Jun Ho Cha
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Publication number: 20190355737Abstract: A three-dimensional semiconductor device includes first and second extended regions disposed on a substrate spaced apart from each other, a memory block disposed on the substrate between the first and second extended regions, and first and second main separation structures disposed on the substrate spaced apart from each other. The first extended region, the memory block and the second extended region are disposed between the first and second main separation structures. The memory block includes data storage regions and word lines. The word lines extend from the memory block and pass through the first and second extended regions. A distance between the first and second main separation structures located on both sides of the first extended region is greater than a distance between the first and second main separation structures located on both sides of the memory block.Type: ApplicationFiled: December 20, 2018Publication date: November 21, 2019Inventors: BYOUNG IL LEE, YU JIN SEO, JUN EON JIN
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Publication number: 20190355736Abstract: A semiconductor device includes a stacked structure disposed on a substrate. The stacked structure includes a plurality of gate electrodes. The semiconductor device further includes a first structure disposed on the substrate and passing through the stacked structure, and a second structure disposed on the substrate. The second structure is disposed outside of the stacked structure, faces the first structure, and is spaced apart from the first structure. The first structure includes a plurality of separation lines passing through at least a portion of the plurality of gate electrodes and extending outside of the stacked structure, and the second structure is formed of the same material as the first structure.Type: ApplicationFiled: December 20, 2018Publication date: November 21, 2019Inventors: SU BIN KANG, Byoung Il Lee, Ji Mo Gu, Yu Jin Seo, Tak Lee
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Publication number: 20190244969Abstract: A vertical-type memory device includes a substrate having a cell array region and a connection region disposed adjacent to the cell array region, a plurality of gate electrode layers stacked on the cell array region and the connection region, a plurality of channel structures disposed in the cell array region, a plurality of dummy channel structures disposed in the connection region, and a plurality of slits disposed in the plurality of gate electrode layers in the cell array region. The plurality of gate electrode layers forms a stepped structure in the connection region, the plurality of channel structures penetrates the plurality of gate electrode layers, and the plurality of dummy channel structures penetrates at least one of the plurality of gate electrode layers.Type: ApplicationFiled: August 22, 2018Publication date: August 8, 2019Inventors: Tak Lee, Su Bin Kang, Ji Mo Gu, Yu Jin Seo, Byoung Il Lee, Jun Ho Cha
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Publication number: 20180175143Abstract: A semiconductor device including a substrate with a first trench, a first insulation liner on inner flanks of the first trench, and a second insulation liner on inner flanks of a first sub trench, the first insulation trench defined by the first insulation liner in the first trench, a top level of the second insulation liner that adjoins the inner flanks of the first sub trench in a direction perpendicular to a top surface of the substrate being different from the top surface of the substrate outside the first trench, may be provided.Type: ApplicationFiled: December 6, 2017Publication date: June 21, 2018Applicant: Samsung Electronics Co., Ltd.Inventors: Chan-sic YOON, Ki-seok Lee, Ki-wook Jung, Dong-oh Kim, Ho-in Lee, Je-min Park, Seok-han Park, Augustin Hong, Ju-yeon Jang, Hyeon-ok Jung, Yu-jin Seo