Abstract: A high voltage transistor structure including a substrate, a first isolation structure, a second isolation structure, a gate structure, a first source and drain region, and a second source and drain region is provided. The first isolation structure and the second isolation structure are disposed in the substrate. The gate structure is disposed on the substrate, at least a portion of the first isolation structure, and at least a portion of the second isolation structure. The first source and drain region and the second source and drain region are located in the substrate on two sides of the first isolation structure and the second isolation structure. The depth of the first isolation structure is greater than the depth of the second isolation structure.

Abstract: A semiconductor device according to the present disclosure includes a gate extension structure, a first source/drain feature and a second source/drain feature, a vertical stack of channel members extending between the first source/drain feature and the second source/drain feature along a direction, and a gate structure wrapping around each of the vertical stack of channel members. The gate extension structure is in direct contact with the first source/drain feature.

Abstract: In a method for obtaining the equivalent oxide thickness of a dielectric layer, a first semiconductor capacitor including a first silicon dioxide layer and a second semiconductor capacitor including a second silicon dioxide layer are provided and a modulation voltage is applied to the semiconductor capacitors to measure a first scanning capacitance microscopic signal and a second scanning capacitance microscopic signal. According to the equivalent oxide thicknesses of the silicon dioxide layers and the scanning capacitance microscopic signals, an impedance ratio is calculated. The modulation voltage is applied to a third semiconductor capacitor including a dielectric layer to measure a third scanning capacitance microscopic signal. Finally, the equivalent oxide thickness of the dielectric layer is obtained according to the equivalent oxide thickness of the first silicon dioxide layer, the first scanning capacitance microscopic signal, third scanning capacitance microscopic signal, and the impedance ratio.

Abstract: In an embodiment, a method includes: forming a first inter-metal dielectric (IMD) layer over a semiconductor substrate; forming a bottom electrode layer over the first IMD layer; forming a magnetic tunnel junction (MTJ) film stack over the bottom electrode layer; forming a first top electrode layer over the MTJ film stack; forming a protective mask covering a first region of the first top electrode layer, a second region of the first top electrode layer being uncovered by the protective mask; forming a second top electrode layer over the protective mask and the first top electrode layer; and patterning the second top electrode layer, the first top electrode layer, the MTJ film stack, the bottom electrode layer, and the first IMD layer with an ion beam etching (IBE) process to form a MRAM cell, where the protective mask is etched during the IBE process.

Abstract: A circuit check method and an electronic apparatus applicable to a to-be-tested circuit are provided. The to-be-tested circuit has one or more first nodes related to a gate voltage of one or more transistor devices and a plurality of second nodes. The circuit check method includes: setting endpoint voltages of a plurality of input interface ports of the to-be-tested circuit; obtaining a first node voltage of the first node according to a conduction path of the to-be-tested circuit and the gate voltage of the transistor device; obtaining a second node voltage of each second node according to the conduction path, the endpoint voltages, and the first node voltage; and performing circuit static check on the to-be-tested circuit by applying the first node voltage and the second node voltage.

Abstract: A method of forming an integrated circuit, including forming a n-type doped well (N-well) and a p-type doped well (P-well) disposed side by side on a semiconductor substrate, forming a first fin active region extruded from the N-well and a second fin active region extruded from the P-well, forming a first isolation feature inserted between and vertically extending through the N-well and the P-well, and forming a second isolation feature over the N-well and the P-well and laterally contacting the first and the second fin active regions.

Abstract: A memory device includes a substrate, a first transistor and a second transistor, a first word line, a second word line, and a bit line. The first transistor and the second transistor are over the substrate and are electrically connected to each other, in which each of the first and second transistors includes first semiconductor layers and second semiconductor layers, a gate structure, and source/drain structures, in which the first semiconductor layers are in contact with the second semiconductor layers, and a width of the first semiconductor layers is narrower than a width of the second semiconductor layers. The first word line is electrically connected to the gate structure of the first transistor. The second word line is electrically connected to the gate structure of the second transistor. The bit line is electrically connected to a first one of the source/drain structures of the first transistor.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes an insulation layer. A bottom electrode via is disposed in the insulation layer. The bottom electrode via includes a conductive portion and a capping layer over the conductive portion. A barrier layer surrounds the bottom electrode via. A magnetic tunneling junction (MTJ) is disposed over the bottom electrode via.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a first transistor, a first resistive random access memory (RRAM) resistor, and a second RRAM resistor. The first resistor includes a first resistive material layer, a first electrode shared by the second resistor, and a second electrode. The second resistor includes the first electrode, a second resistive material layer, and a third electrode. The first electrode is electrically coupled to the first transistor.

Abstract: A heterogeneous integration semiconductor package structure including a heat dissipation assembly, multiple chips, a package assembly, multiple connectors and a circuit substrate is provided. The heat dissipation assembly has a connection surface and includes a two-phase flow heat dissipation device and a first redistribution structure layer embedded in the connection surface. The chips are disposed on the connection surface of the heat dissipation assembly and electrically connected to the first redistribution structure layer. The package assembly surrounds the chips and includes a second redistribution structure layer disposed on a lower surface and multiple conductive vias electrically connected to the first redistribution structure layer and the second redistribution structure layer. The connectors are disposed on the package assembly and electrically connected to the second redistribution structure layer.

Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

Abstract: A semiconductor device and method of manufacture are provided. In some embodiments isolation regions are formed by modifying a dielectric material of a dielectric layer such that a first portion of the dielectric layer is more readily removed by an etching process than a second portion of the dielectric layer. The modifying of the dielectric material facilitates subsequent processing steps that allow for the tuning of a profile of the isolation regions to a desired geometry based on the different material properties of the modified dielectric material.

Abstract: A method may include forming a mask layer on top of a first dielectric layer formed on a first source/drain and a second source/drain, and creating an opening in the mask layer and the first dielectric layer that exposes portions of the first source/drain and the second source/drain. The method may include filling the opening with a metal layer that covers the exposed portions of the first source/drain and the second source/drain, and forming a gap in the metal layer to create a first metal contact and a second metal contact. The first metal contact may electrically couple to the first source/drain and the second metal contact may electrically couple to the second source/drain. The gap may separate the first metal contact from the second metal contact by less than nineteen nanometers.

Abstract: Provided is an herbal composition including an extract from an herbal raw material including at least one of Artemisia argyi, Ohwia caudata, Anisomeles indica (L.) O. Ktze, Ophiopogon japonicus, Houttuynia cordata, Platycodon grandiflorus, Glycyrrhiza uralensis, Perilla frutescens, and chrysanthemum. Also provided is a method for preparing the herbal composition and a method for preventing or treating a viral infection by administering an effective amount of the herbal composition to a subject in need thereof.

Abstract: Provided is a pre-conditioned mesenchymal stem cell (MSC), an exosome derived therefrom, and a cell-protective composition including the pre-conditioned MSC or the exosome. Also provided is a method for preparing the pre-conditioned MSC by contacting an MSC with an effective amount of ginkgolide A. Still provided is a method for promoting recovery or reducing death of damaged nerve cells, including administering to the damaged nerve cells a composition including the pre-conditioned MSC or the exosome.

Abstract: The various embodiments provide a semiconductor chip holder that holds semiconductor chips. The chip holder protects the semiconductor chips from possible damage during transport and/or storage. The chip holder is flexible and may be wound around a reel for convenient transport and storage. In one embodiment, the chip holder includes a support substrate with receptacles that receive semiconductor chips, a cover layer that seals the receptacles and holds the semiconductor chips within the receptacles, and plugs to securely couple the support substrate and the cover layer together.

Abstract: An immunomagnetic nanocapsule includes a core, a shell and an outer layer. The shell is formed by a complex, and the complex is fabricated by a combination of fucoidan, oxidized dextran, and a plurality of superparamagnetic iron oxide nanoparticles via a hydrophobic interaction. The core is encapsulated in the shell. The outer layer includes at least one antibody immobilized to outside of the shell to form the outer layer, wherein the antibody is an immune checkpoint inhibitor and/or a T cell expansion antibody.

Abstract: The various embodiments provide a semiconductor chip holder that holds semiconductor chips. The chip holder protects the semiconductor chips from possible damage during transport and/or storage. The chip holder is flexible and may be wound around a reel for convenient transport and storage. In one embodiment, the chip holder includes a support substrate with receptacles that receive semiconductor chips, a cover layer that seals the receptacles and holds the semiconductor chips within the receptacles, and plugs to securely couple the support substrate and the cover layer together.

Abstract: Packaging method and wafer structures are described. A semiconductor wafer having dies, scribe streets surrounding the dies and between the dies and test pads in the scribe streets is provided. Wafer testing is performed to the semiconductor wafer through the test pads. A laser grooving process is performed to the semiconductor wafer along the scribe streets and the test pads in the scribe streets are removed to form laser scanned regions in the scribe streets. A mechanical dicing process is performed cutting through the semiconductor wafer along the scribe streets to singulate the dies. The singulated dies are packaged.

Abstract: An immunomagnetic nanocapsule includes a core, a shell and an outer layer. The shell is formed by a complex, and the complex is fabricated by a combination of fucoidan, oxidized dextran, and a plurality of superparamagnetic iron oxide nanoparticles via a hydrophobic interaction. The core is encapsulated in the shell. The outer layer includes at least one antibody immobilized to outside of the shell to form the outer layer, wherein the antibody is an immune checkpoint inhibitor and/or a T cell expansion antibody.