Abstract: A switching regulator includes: a power stage circuit, a control circuit and an operation clock signal generator circuit. The operation clock signal generator circuit includes: a time point option unit generating a time point option signal according to a phase node voltage during a ringing period subsequent to a blanking period, to indicate at least one available turn-on time point, or generating a lowest voltage time point signal according to the phase node voltage during a tolerance period, to indicate a lowest voltage time point; and a time point deciding unit deciding the tolerance period according to a base clock signal and a tolerable frequency range and select the available turn-on time point or the lowest voltage time point within the tolerance period as a decided time point, to generate the operation clock signal.

Abstract: A semiconductor device according to the present disclosure includes a gate extension structure, a first source/drain feature and a second source/drain feature, a vertical stack of channel members extending between the first source/drain feature and the second source/drain feature along a direction, and a gate structure wrapping around each of the vertical stack of channel members. The gate extension structure is in direct contact with the first source/drain feature.

Abstract: A semiconductor die package includes an inductor-capacitor (LC) semiconductor die that is directly bonded with a logic semiconductor die. The LC semiconductor die includes inductors and capacitors that are integrated into a single die. The inductors and capacitors of the LC semiconductor die may be electrically connected with transistors and other logic components on the logic semiconductor die to form a voltage regulator circuit of the semiconductor die package. The integration of passive components (e.g., the inductors and capacitors) of the voltage regulator circuit into a single semiconductor die reduces signal propagation distances in the voltage regulator circuit, which may increase the operating efficiency of the voltage regulator circuit, may reduce the formfactor for the semiconductor die package, may reduce parasitic capacitance and/or may reduce parasitic inductance in the voltage regulator circuit (thereby improving the performance of the voltage regulator circuit), among other examples.

Abstract: In an embodiment, a method includes: forming a first inter-metal dielectric (IMD) layer over a semiconductor substrate; forming a bottom electrode layer over the first IMD layer; forming a magnetic tunnel junction (MTJ) film stack over the bottom electrode layer; forming a first top electrode layer over the MTJ film stack; forming a protective mask covering a first region of the first top electrode layer, a second region of the first top electrode layer being uncovered by the protective mask; forming a second top electrode layer over the protective mask and the first top electrode layer; and patterning the second top electrode layer, the first top electrode layer, the MTJ film stack, the bottom electrode layer, and the first IMD layer with an ion beam etching (IBE) process to form a MRAM cell, where the protective mask is etched during the IBE process.

Abstract: A switching regulator includes: a power stage circuit; a control circuit; and an operation clock signal generator circuit configured to generate plural test clock signals during a clock determination period and generate an operation clock signal during a normal operation period. When the switching regulator operates during the clock determination period in a discontinuous conduction mode, the control circuit alternatingly generates plural PWM signals corresponding to the test clock signals generated by the operation clock signal generator circuit and an output voltage, wherein each PWM signal corresponds to one test clock signal, so that the power stage circuit generates corresponding phase node voltages at a phase node, wherein among the plural test clock signals, the operation clock signal generator circuit selects one test clock signal corresponding to a minimum phase node voltage as the operation clock signal during the normal operation period.

Abstract: A method of forming an integrated circuit, including forming a n-type doped well (N-well) and a p-type doped well (P-well) disposed side by side on a semiconductor substrate, forming a first fin active region extruded from the N-well and a second fin active region extruded from the P-well, forming a first isolation feature inserted between and vertically extending through the N-well and the P-well, and forming a second isolation feature over the N-well and the P-well and laterally contacting the first and the second fin active regions.

Abstract: A memory device includes a substrate, a first transistor and a second transistor, a first word line, a second word line, and a bit line. The first transistor and the second transistor are over the substrate and are electrically connected to each other, in which each of the first and second transistors includes first semiconductor layers and second semiconductor layers, a gate structure, and source/drain structures, in which the first semiconductor layers are in contact with the second semiconductor layers, and a width of the first semiconductor layers is narrower than a width of the second semiconductor layers. The first word line is electrically connected to the gate structure of the first transistor. The second word line is electrically connected to the gate structure of the second transistor. The bit line is electrically connected to a first one of the source/drain structures of the first transistor.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes an insulation layer. A bottom electrode via is disposed in the insulation layer. The bottom electrode via includes a conductive portion and a capping layer over the conductive portion. A barrier layer surrounds the bottom electrode via. A magnetic tunneling junction (MTJ) is disposed over the bottom electrode via.

Abstract: A heterogeneous integration semiconductor package structure including a heat dissipation assembly, multiple chips, a package assembly, multiple connectors and a circuit substrate is provided. The heat dissipation assembly has a connection surface and includes a two-phase flow heat dissipation device and a first redistribution structure layer embedded in the connection surface. The chips are disposed on the connection surface of the heat dissipation assembly and electrically connected to the first redistribution structure layer. The package assembly surrounds the chips and includes a second redistribution structure layer disposed on a lower surface and multiple conductive vias electrically connected to the first redistribution structure layer and the second redistribution structure layer. The connectors are disposed on the package assembly and electrically connected to the second redistribution structure layer.

Abstract: A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

Abstract: In a file sharing system, a key manager unit realizes a correspondence between the first user identifier and the first public key in response to a registration request of the first user, generates a first key material for encrypting the first file into a first encrypted file, and generates a first credential according to the first user identifier, the first file identifier, the first public key and the first key material after receiving an access-right claim request to the first file from the first user. A file storage unit stores the first encrypted file and the first credential. The first user uses the first user identifier, the first file identifier and the first private key to retrieve the first key material out of the first credential, and uses the first key material to decrypt the first encrypted file into the first file.

Abstract: A method may include forming a mask layer on top of a first dielectric layer formed on a first source/drain and a second source/drain, and creating an opening in the mask layer and the first dielectric layer that exposes portions of the first source/drain and the second source/drain. The method may include filling the opening with a metal layer that covers the exposed portions of the first source/drain and the second source/drain, and forming a gap in the metal layer to create a first metal contact and a second metal contact. The first metal contact may electrically couple to the first source/drain and the second metal contact may electrically couple to the second source/drain. The gap may separate the first metal contact from the second metal contact by less than nineteen nanometers.

Abstract: A computer chassis includes walls defining an airspace containing heat-generating components (e.g., storage drives). The airspace is divided into first and second regions, such as by a printed circuit board supporting the heat-generating components within the first region. An air input feeds both the first region and second region. Input air going through the first region first passes by a forward set of heat-generating components before continuing to a rearward set of heat-generating components to extract heat therefrom. Input air going through the second region bypasses the forward set of heat-generating components before being directed out through an air opening partway down the length of the chassis, after which this air passes by a rearward set of heat-generating components to extract heat.

Abstract: A battery charging apparatus includes a battery compartment having a receptacle that is configured to receive a battery pack. The battery charging apparatus includes a first heat exchange module and/or a second heat exchange module. The first heat exchange module includes a plenum surrounding the receptacle, where the plenum includes a chamber to receive a fluid. The plenum also includes a plurality of flow guides disposed in the chamber to define a variable flow passage for the fluid. The second heat exchange module includes a battery connector and a heat sink thermally coupled to the battery connector. The heat sink is arranged to dissipate thermal energy from the battery pack.

Abstract: A bridge includes a connecting platform, an electrical connector, a wireless communication module, and a processing unit. The electrical connector is disposed on the connecting platform. The wireless communication module is disposed on the connecting platform and configured to receive a wireless signal. The processing unit is configured to: carry out a verification process on information included in the wireless signal; and allow the electrical connector to transmit power when the verification process on the information turned out to be true.

Abstract: A connecting device includes a base, a locking member, linkage, and a detector. The locking member is rotatably disposed on the base and configured to rotate about an axis to a locked position along a first rotational direction and to an unlocked position along a second rotational direction opposite to the first rotational direction. The locking member has an engaging portion at a peripheral edge thereof. The linkage is rotatably disposed on the base and includes an abutting portion configured to abut against the peripheral edge. When the locking member is rotated to the locked position, the abutting portion is moved to and is engaged with the engaging portion accompanied with a rotation of the linkage. The detector is disposed on the base and configured to detect the rotation of the linkage.

Abstract: A battery charging apparatus includes a battery compartment having a receptacle that is configured to receive a battery pack. The battery charging apparatus includes a first heat exchange module and/or a second heat exchange module. The first heat exchange module includes a plenum surrounding the receptacle, where the plenum includes a chamber to receive a fluid. The plenum also includes a plurality of flow guides disposed in the chamber to define a variable flow passage for the fluid. The second heat exchange module includes a battery connector and a heat sink thermally coupled to the battery connector. The heat sink is arranged to dissipate thermal energy from the battery pack.