Abstract: A method is provided for processing a substrate. The substrate has at least one filter region, a plurality of bond pads, and a plurality of scribe lines arranged around the filter region and bond pads. A first planarization layer is formed above the substrate. The planarization layer has a substantially flat top surface overlying the filter region, the bond pads and the scribe lines. At least one color resist layer is formed over the first planarization layer and within the filter region while the first planarization layer covers the bond pads and the scribe lines.

Abstract: A method is provided for processing a substrate. The substrate has at least one filter region, a plurality of bond pads, and a plurality of scribe lines arranged around the filter region and bond pads. A first planarization layer is formed above the substrate. The planarization layer has a substantially flat top surface overlying the filter region, the bond pads and the scribe lines. At least one color resist layer is formed over the first planarization layer and within the filter region while the first planarization layer covers the bond pads and the scribe lines.

Abstract: A method is provided for processing a substrate. The substrate has at least one filter region, a plurality of bond pads, and a plurality of scribe lines arranged around the filter region and bond pads. A first planarization layer is formed above the substrate. The planarization layer has a substantially flat top surface overlying the filter region, the bond pads and the scribe lines. At least one color resist layer is formed over the first planarization layer and within the filter region while the first planarization layer covers the bond pads and the scribe lines.

Abstract: An image sensor device and method for forming said device are described. The image sensor structure comprises a substrate with photodiodes, an interconnect structure formed on the substrate, a color filter layer above the interconnect structure, a first microlens array, an overcoat layer, and a second microlens array. A key feature is that a second microlens has a larger radius of curvature than a first microlens. Additionally, each first microlens and second microlens is a flat convex lens. Thus, a thicker second microlens with a short focal length is aligned above a thinner first microlens having a long focal length. A light column that includes a first microlens, a second microlens and a color filter region is formed above each photodiode. A second embodiment involves replacing a second microlens in each light column with a plurality of smaller second microlenses that focus light onto a first microlens.

Abstract: A new method is provided of treating the wafer prior to the process of singulating the wafer into individual die. A first surface of the wafer over which CMOS image sensor devices have been created is coated with a layer of material that is non-soluble in water. The wafer is attached to a tape by bringing a second surface of the wafer in contact with the tape. The wafer is singulated by approaching the first surface of the wafer and by sawing first through the layer of material that has been coated over the first surface of the wafer and by then sawing through the wafer, stopping at the surface of the tape. A thorough water rinse is applied to the surface of the singulated wafer, followed by a wafer clean applying specific chemicals for this purpose. The singulated die is now removed from the tape and further processed by applying steps of die mount, wire bonding, surrounding the die in a mold compound and marking the package.

Abstract: A transmittance overcoat with effectively planar top surface and specified optical and materials properties is applied above a microlens layer to extend the focal length and enhance the performance of long focal length microlenses for semiconductor array color imaging devices. The geometrical optics design factors and microelectric fabrication sequence to achieve optimized long focal length microlens performance are disclosed. The principal advantages of the adaptive process taught in the present invention is shown to enable real-time compensation adjustments for process and material variations. The overcoat process enables simplified single-layer integrated microlens optics for low-cost, high volume manufacturing of CMOS and CCD color video cameras.

Abstract: A method is provided for processing a substrate. The substrate has at least one filter region, a plurality of bond pads, and a plurality of scribe lines arranged around the filter region and bond pads. A first planarization layer is formed above the substrate. The planarization layer has a substantially flat top surface overlying the filter region, the bond pads and the scribe lines. At least one color resist layer is formed over the first planarization layer and within the filter region while the first planarization layer covers the bond pads and the scribe lines.

Abstract: An image sensor device and method for forming said device are described. The image sensor structure comprises a substrate with photodiodes, an interconnect structure formed on the substrate, a color filter layer above the interconnect structure, a first microlens array, an overcoat layer, and a second microlens array. A key feature is that a second microlens has a larger radius of curvature than a first microlens. Additionally, each first microlens and second microlens is a flat convex lens. Thus, a thicker second microlens with a short focal length is aligned above a thinner first microlens having a long focal length. A light column that includes a first microlens, a second microlens and a color filter region is formed above each photodiode. A second embodiment involves replacing a second microlens in each light column with a plurality of smaller second microlenses that focus light onto a first microlens.

Abstract: A color filter includes a substrate having a plurality of scribe lines arranged to form at least one filter region surrounded by the scribe lines. The scribe lines are at least partially filled with a resist material. At least one color resist layer is formed above the substrate within the at least one filter region.

Abstract: A new method to form passivation openings in the manufacture of an integrated circuit device is achieved. The passivation openings have gradually sloping sidewalls that allow a protective tape to be completely removed without leaving adhesive residue. A semiconductor substrate is provided. A passivation layer is deposited. An organic photoresist layer is deposited overlying the passivation layer. The organic photoresist layer is patterned to expose the passivation layer in areas where passivation openings are planned. The organic photoresist layer is reflowed to create gradually sloping sidewalls on the organic photoresist layer. The passivation layer is etched through to from the passivation openings. The passivation openings are thereby formed with gradually sloping sidewalls. The organic photoresist layer is stripped away. A protective tape is applied overlying the passivation layer and the passivation openings. The protective tape is removed.

Abstract: A transmittance overcoat with effectively planar top surface and specified optical and materials properties is applied above a microlens layer to extend the focal length and enhance the performance of long focal length microlenses for semiconductor array color imaging devices. The geometrical optics design factors and microelectric fabrication sequence to achieve optimized long focal length microlens performance are disclosed. The principal advantages of the adaptive process taught in the present invention is shown to enable real-time compensation adjustments for process and material variations. The overcoat process enables simplified single-layer integrated microlens optics for low-cost, high volume manufacturing of CMOS and CCD color video cameras.

Abstract: A method for fabricating a microelectronic product provides for forming a planarizing layer upon a bond pad and a topographic feature, both formed laterally separated over a substrate. The planarizing layer is formed with a diminished thickness upon the bond pad such that it may be readily etched to expose the bond pad while employing as a mask an additional layer formed over the topographic feature but not over the bond pad. The method is particularly useful for forming color filter sensor image array optoelectronic products with attenuated bond pad corrosion.

Abstract: A method for processing a semiconductor substrate comprises the steps of: providing a substrate having a plurality of scribe lines arranged to form at least one filter region surrounded by the scribe lines, the scribe lines having a step height; at least partially filling the scribe lines with a resist material to reduce the step height of the scribe lines; and forming at least one color resist layer within the at least one filter region while the insoluble resist material remains in the scribe lines.

Abstract: A transmittance overcoat with effectively planar top surface and specified optical and materials properties is applied above a microlens layer to extend the focal length and enhance the performance of long focal length microlenses for semiconductor array color imaging devices. The geometrical optics design factors and microelectronic fabrication sequence to achieve optimized long focal length microlens performance are disclosed. The principal advantages of the adaptive process taught in the present invention is shown to enable real-time compensation adjustments for process and material variations. The overcoat process enables simplified single-layer integrated microlens optics for lowcost, high volume manufacturing of CMOS and CCD color video cameras.

Abstract: A method for fabricating a microelectronic product provides for forming a planarizing layer upon a bond pad and a topographic feature, both formed laterally separated over a substrate. The planarizing layer is formed with a diminished thickness upon the bond pad such that it may be readily etched to expose the bond pad while employing as a mask an additional layer formed over the topographic feature but not over the bond pad. The method is particularly useful for forming color filter sensor image array optoelectronic products with attenuated bond pad corrosion.

Abstract: A new method is provided of treating the wafer prior to the process of singulating the wafer into individual die. A surface of the wafer over which CMOS image sensor devices have been created is coated with a layer of material that is non-soluble in water. The wafer is singulated by sawing through the layer of material that has been coated over the surface of the wafer and by then sawing through the wafer. The singulated die is then further processed by applying steps of die mount, wire bonding, surrounding the die in a mold compound and marking the package.

Abstract: A new method is provided of treating the wafer prior to the process of singulating the wafer into individual die. A first surface of the wafer over which CMOS image sensor devices have been created is coated with a layer of material that is non-soluble in water. The wafer is attached to a tape by bringing a second surface of the wafer in contact with the tape. The wafer is singulated by approaching the first surface of the wafer and by sawing first through the layer of material that has been coated over the first surface of the wafer and by then sawing through the wafer, stopping at the surface of the tape. A thorough water rinse is applied to the surface of the singulated wafer, followed by a wafer clean applying specific chemicals for this purpose. The singulated die is now removed from the tape and further processed by applying steps of die mount, wire bonding, surrounding the die in a mold compound and marking the package.

Abstract: Within a method for forming a planarizing layer within a microelectronic fabrication, there is employed formed upon a partially photoexposed planarizing layer formed of a partially photoexposed negative photoresist material a sacrificial layer. Within the method, when sequentially: (1) stripping from the partially photoexposed planarizing layer the sacrificial layer; and (2) developing the partially photoexposed planarizing layer to form a developed planarizing layer, the developed planarizing layer is formed with enhanced planarity and diminished thickness.

Abstract: A method of clearing photoresist on a wafer edge, including the following steps. A wafer having a upper exposed conductive layer is provided. The wafer having a center, an edge and a ring-shaped area proximate the wafer edge. A photoresist layer is formed upon the exposed conductive layer. The photoresist layer is removed from within the ring-shaped area by a rinse process to expose the conductive layer within the ring-shaped area. An oxygen diffusion barrier layer is formed over the photoresist layer.

Abstract: Within a method for forming a color filter image array optoelectronic microelectronic fabrication, and the color filter image array optoelectronic microelectronic fabrication formed employing the method, there is provided a substrate having formed therein a series of photo active regions. There is also formed over the substrate at least one color filter layer having formed therein a color filter region having a concave upper surface. There is also formed upon the at least one color filter layer and planarizing the at least one color filter region having the concave upper surface, a planarizing layer. The planarizing layer provides for enhanced resolution of the color filter image array optoelectronic microelectronic fabrication.