Abstract: In accordance with some aspects of the disclosure, a semiconductor structure is provided. The semiconductor structure includes: an active region; and a gate stack disposed on the active region. The gate stack includes: at least one gate dielectric layer disposed on the active region; and a metal gate structure disposed on the at least one gate dielectric layer. The metal gate structure includes: a metal gate layer comprising a first material; and at least one dummy structure disposed in the metal gate layer, the at least one dummy structure extending vertically through an entire thickness of the metal gate structure and comprising a second material. The second material is different from the first material.

Abstract: In a method for obtaining the equivalent oxide thickness of a dielectric layer, a first semiconductor capacitor including a first silicon dioxide layer and a second semiconductor capacitor including a second silicon dioxide layer are provided and a modulation voltage is applied to the semiconductor capacitors to measure a first scanning capacitance microscopic signal and a second scanning capacitance microscopic signal. According to the equivalent oxide thicknesses of the silicon dioxide layers and the scanning capacitance microscopic signals, an impedance ratio is calculated. The modulation voltage is applied to a third semiconductor capacitor including a dielectric layer to measure a third scanning capacitance microscopic signal. Finally, the equivalent oxide thickness of the dielectric layer is obtained according to the equivalent oxide thickness of the first silicon dioxide layer, the first scanning capacitance microscopic signal, third scanning capacitance microscopic signal, and the impedance ratio.

Abstract: A method includes providing a substrate having a surface such that a first hard mask layer is formed over the surface and a second hard mask layer is formed over the first hard mask layer, forming a first pattern in the second hard mask layer, where the first pattern includes a first mandrel oriented lengthwise in a first direction and a second mandrel oriented lengthwise in a second direction different from the first direction, and where the first mandrel has a top surface, a first sidewall, and a second sidewall opposite to the first sidewall, and depositing a material towards the first mandrel and the second mandrel such that a layer of the material is formed on the top surface and the first sidewall but not the second sidewall of the first mandrel.

Abstract: A ghost key preventing circuit includes plural driving lines, plural sensing lines, plural key switches, plural bias resistors and a controller. The plural driving lines and the plural sensing lines are collaboratively formed as a matrix circuit. The plural key switches are included in the matrix circuit. The plural bias resistors are connected with the corresponding sensing lines. When the key switch of a specified switch circuit is turned on, a divided voltage is generated and outputted from the specified switch circuit. The controller judges whether the key switch of the specified switch circuit is normally turned on or the key switch is a ghost key according to the divided voltage.

Abstract: A product quality improvement feedback method is provided. The method includes the following steps. Provide a first checklist, a second checklist, and a third checklist in a design period, a trial production period, and a mass production period respectively. Execute a failure mode and effects analysis to the first checklist, the second checklist, and the third checklist so as to obtain a risk priority number respectively. When the first risk priority number is greater than a specific value, feedback each result of the failure mode and effects analyses to the first checklist, the second checklist, the third checklist, a design list, a trial production list or a mass production list.

Abstract: In a press method, a housing is placed on a carrying table, and a panel is placed on a movable platform, and then a first driving unit is used for driving the movable platform to extended from an opening of a housing into the housing, such that the panel is fixed to a position corresponding to the window without touching an internal surface of the housing, and finally a press machine is used for driving the housing and the movable platform to engage with each other, such that the panel is combined with the interior of the housing for sealing the window. Therefore, the panel can be combined into a cramped space of the housing to overcome the defective issue of the prior art. In addition, a press tool adopting the press method is provided.

Abstract: In a press method, a housing is placed on a carrying table, and a panel is placed on a movable platform, and then a first driving unit is used for driving the movable platform to extended from an opening of a housing into the housing, such that the panel is fixed to a position corresponding to the window without touching an internal surface of the housing, and finally a press machine is used for driving the housing and the movable platform to engage with each other, such that the panel is combined with the interior of the housing for sealing the window. Therefore, the panel can be combined into a cramped space of the housing to overcome the defective issue of the prior art. In addition, a press tool adopting the press method is provided.