Abstract: A semiconductor device includes a fin structure disposed over a substrate. The semiconductor device includes a first interfacial layer straddling the fin structure. The semiconductor device includes a gate dielectric layer extending along sidewalls of the fin structure. The semiconductor device includes a second interfacial layer overlaying a top surface of the fin structure. The semiconductor device includes a gate structure straddling the fin structure. The first interfacial layer and the gate dielectric layer are disposed between the sidewalls of the fin structure and the gate structure.

Abstract: A dust removing device includes a dust-proof chamber, a spraying mechanism, and a recycling mechanism. A dust-proof chamber defines the work space. A spraying mechanism includes a plurality of spraying nozzles mounted on the dust-proof chamber for spraying water into the dust-proof chamber. A recycling mechanism is placed under the dust-proof chamber, and communicates with the dust-proof chamber for recycling the water which contains the dust removed, and avoiding the build-up of dust in air extraction pipes.

Abstract: A method for regulating the quality, such as the combustion loss values, of coal ashes so as to make the same suitable for use in cements is disclosed. The method includes mixing ashes having high combustion loss values with fly ashes having low combustion loss values so that the high combustion loss ashes can be used in cements. The ashes are preferably burned prior to the mixing step in order to reduce residual carbon and oily substances present in the ashes. Bottom ashes collected at the bottom of furnaces are ground and fired to have a combustion loss value and a particle size close to those of fly ashes.