Patents by Inventor Yu-Ling Chang CHIEN

Yu-Ling Chang CHIEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SYSTEM AND METHOD FOR DIRECTED SELF-ASSEMBLY WITH HIGH BOILING POINT SOLVENT
    Publication number: 20230377883
    Abstract: A system and method utilize directed self-assembly films, including block copolymers and solvents, to form features on a wafer. The solvents have high boiling points. The high boiling points of the solvents enable directed self-assembly processes to utilize very high temperature, rapid thermal annealing processes to generate a pattern of first and second polymer structures over a wafer from the directed self-assembly films. The pattern of the first and second polymer structures can be utilized to form the features on the wafer.
    Type: Application
    Filed: May 20, 2022
    Publication date: November 23, 2023
    Inventors: Yu-Ling CHANG CHIEN, Yu-Chung SU, Yahru CHENG, Ching-Yu CHANG, Chin-Hsiang LIN
  • Method for manufacturing a semiconductor device and a coating material
    Patent number: 11276568
    Abstract: In a method of manufacturing a semiconductor device, an underlying structure is formed. A surface grafting layer is formed on the underlying structure. A photo resist layer is formed on the surface grafting layer. The surface grafting layer includes a coating material including a backbone polymer, a surface grafting unit coupled to the backbone polymer and an adhesion unit coupled to the backbone polymer.
    Type: Grant
    Filed: December 31, 2019
    Date of Patent: March 15, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Ling Chang Chien, Chien-Chih Chen, Chin-Hsiang Lin, Ching-Yu Chang, Yahru Cheng
  • METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND A COATING MATERIAL
    Publication number: 20200135454
    Abstract: In a method of manufacturing a semiconductor device, an underlying structure is formed. A surface grafting layer is formed on the underlying structure. A photo resist layer is formed on the surface grafting layer. The surface grafting layer includes a coating material including a backbone polymer, a surface grafting unit coupled to the backbone polymer and an adhesion unit coupled to the backbone polymer.
    Type: Application
    Filed: December 31, 2019
    Publication date: April 30, 2020
    Inventors: Yu-Ling Chang CHIEN, Chien-Chih CHEN, Chin-Hsiang LIN, Ching-Yu CHANG, Yahru CHENG
  • Method for manufacturing a semiconductor device and a coating material
    Patent number: 10529552
    Abstract: In a method of manufacturing a semiconductor device, an underlying structure is formed. A surface grafting layer is formed on the underlying structure. A photo resist layer is formed on the surface grafting layer. The surface grafting layer includes a coating material including a backbone polymer, a surface grafting unit coupled to the backbone polymer and an adhesion unit coupled to the backbone polymer.
    Type: Grant
    Filed: February 26, 2018
    Date of Patent: January 7, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Ling Chang Chien, Chien-Chih Chen, Chin-Hsiang Lin, Ching-Yu Chang, Yahru Cheng
  • METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND A COATING MATERIAL
    Publication number: 20190164746
    Abstract: In a method of manufacturing a semiconductor device, an underlying structure is formed. A surface grafting layer is formed on the underlying structure. A photo resist layer is formed on the surface grafting layer. The surface grafting layer includes a coating material including a backbone polymer, a surface grafting unit coupled to the backbone polymer and an adhesion unit coupled to the backbone polymer.
    Type: Application
    Filed: February 26, 2018
    Publication date: May 30, 2019
    Inventors: Yu-Ling Chang CHIEN, Chien-Chih CHEN, Chin-Hsiang LIN, Ching-Yu CHANG, Joy CHENG