Patents by Inventor Yumei Su

Yumei Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Trenched device wafer, stepped-sidewall device die, and associated method
    Patent number: 10163954
    Abstract: A trenched device wafer includes a device substrate layer having a top surface; a plurality of devices in the device substrate layer, and a trench in the top surface. The trench extends into the device substrate layer, and is located between a pair of adjacent devices of the plurality of devices. A method for forming a device die from a device wafer includes forming a trench in a top surface of the device wafer between two adjacent devices of the device wafer. The trench has a bottom surface located (a) at a first depth beneath the top surface and (b) at a first height above a wafer bottom surface. The method also includes, after forming the trench, decreasing a thickness of the device wafer, between the two adjacent devices, to a thickness less than the first height.
    Type: Grant
    Filed: April 11, 2016
    Date of Patent: December 25, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Yumei Su, Chi-Chih Huang, Wei-Feng Lin
  • Trenched Device Wafer, Stepped-Sidewall Device Die, And Associated Method
    Publication number: 20170294471
    Abstract: A trenched device wafer includes a device substrate layer having a top surface; a plurality of devices in the device substrate layer, and a trench in the top surface. The trench extends into the device substrate layer, and is located between a pair of adjacent devices of the plurality of devices. A method for forming a device die from a device wafer includes forming a trench in a top surface of the device wafer between two adjacent devices of the device wafer. The trench has a bottom surface located (a) at a first depth beneath the top surface and (b) at a first height above a wafer bottom surface. The method also includes, after forming the trench, decreasing a thickness of the device wafer, between the two adjacent devices, to a thickness less than the first height.
    Type: Application
    Filed: April 11, 2016
    Publication date: October 12, 2017
    Inventors: Yumei Su, Chi-Chih Huang, Wei-Feng Lin