Patents by Inventor Yu Oya

Yu Oya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • LEARNING DEVICE, LEARNING METHOD, AND LEARNING PROGRAM
    Publication number: 20210192341
    Abstract: A first calculation unit (121), for each of layers of a neural network, discretizes a parameter using a step function and then calculates an output signal. Further, a second calculation unit (122), for each of layers of a neural network, calculates a gradient of an error function of the output signal with respect to the parameter using a continuous function to which the step function is approximated. Further, an updating unit (123) updates the parameter on the basis of the gradient calculated by the second calculation unit (122).
    Type: Application
    Filed: April 11, 2019
    Publication date: June 24, 2021
    Applicant: NIPPON TELEGRAPH AND TELEPHONE CORPORATION
    Inventors: Yu OYA, Yasutoshi IDA
  • Solid-state imaging device and camera including discrete trench isolation structure
    Patent number: 9711561
    Abstract: A solid-state imaging device including is provided. The solid-state imaging device includes: pixels arrayed; a photoelectric conversion element in each of the pixels; a read transistor for reading electric charges photoelectrically-converted in the photoelectric conversion elements to a floating diffusion portion; a shallow trench element isolation region bordering the floating diffusion portion; and an impurity diffusion isolation region for other element isolation regions than the shallow trench element isolation region.
    Type: Grant
    Filed: November 23, 2016
    Date of Patent: July 18, 2017
    Assignee: Sony Corporation
    Inventors: Kazuichiro Itonaga, Yu Oya
  • SOLID-STATE IMAGING DEVICE AND CAMERA
    Publication number: 20170084660
    Abstract: A solid-state imaging device including is provided. The solid-state imaging device includes: pixels arrayed; a photoelectric conversion element in each of the pixels; a read transistor for reading electric charges photoelectrically-converted in the photoelectric conversion elements to a floating diffusion portion; a shallow trench element isolation region bordering the floating diffusion portion; and an impurity diffusion isolation region for other element isolation regions than the shallow trench element isolation region.
    Type: Application
    Filed: November 23, 2016
    Publication date: March 23, 2017
    Applicant: Sony Corporation
    Inventors: Kazuichiro Itonaga, Yu Oya
  • Solid-state imaging device and camera including discrete trench isolation structure
    Patent number: 9543350
    Abstract: A solid-state imaging device including is provided. The solid-state imaging device includes: pixels arrayed; a photoelectric conversion element in each of the pixels; a read transistor for reading electric charges photoelectrically-converted in the photoelectric conversion elements to a floating diffusion portion; a shallow trench element isolation region bordering the floating diffusion portion; and an impurity diffusion isolation region for other element isolation regions than the shallow trench element isolation region.
    Type: Grant
    Filed: September 14, 2015
    Date of Patent: January 10, 2017
    Assignee: Sony Corporation
    Inventors: Kazuichiro Itonaga, Yu Oya
  • SOLID-STATE IMAGING DEVICE AND CAMERA
    Publication number: 20160005783
    Abstract: A solid-state imaging device including is provided. The solid-state imaging device includes: pixels arrayed; a photoelectric conversion element in each of the pixels; a read transistor for reading electric charges photoelectrically-converted in the photoelectric conversion elements to a floating diffusion portion; a shallow trench element isolation region bordering the floating diffusion portion; and an impurity diffusion isolation region for other element isolation regions than the shallow trench element isolation region.
    Type: Application
    Filed: September 14, 2015
    Publication date: January 7, 2016
    Inventors: Kazuichiro Itonaga, Yu Oya
  • Solid-state imaging device and camera
    Patent number: 9165958
    Abstract: A solid-state imaging device including is provided. The solid-state imaging device includes: pixels arrayed; a photoelectric conversion element in each of the pixels; a read transistor for reading electric charges photoelectrically-converted in the photoelectric conversion elements to a floating diffusion portion; a shallow trench element isolation region bordering the floating diffusion portion; and an impurity diffusion isolation region for other element isolation regions than the shallow trench element isolation region.
    Type: Grant
    Filed: October 24, 2012
    Date of Patent: October 20, 2015
    Assignee: Sony Corporation
    Inventors: Kazuichiro Itonaga, Yu Oya
  • Solid-state imaging device and camera
    Patent number: 8350305
    Abstract: A solid-state imaging device is provided. The solid-state imaging device includes: pixels arrayed; a photoelectric conversion element in each of the pixels; a read transistor for reading electric charges photoelectrically-converted in the photoelectric conversion elements to a floating diffusion portion; a shallow trench element isolation region bordering the floating diffusion portion; and an impurity diffusion isolation region for element isolation regions other than the shallow trench element isolation region.
    Type: Grant
    Filed: January 4, 2008
    Date of Patent: January 8, 2013
    Assignee: Sony Corporation
    Inventors: Kazuichiro Itonaga, Yu Oya
  • Solid-State imaging device and camera
    Publication number: 20080197387
    Abstract: A solid-state imaging device is provided. The solid-state imaging device includes: pixels arrayed; a photoelectric conversion element in each of the pixels; a read transistor for reading electric charges photoelectrically-converted in the photoelectric conversion elements to a floating diffusion portion; a shallow trench element isolation region bordering the floating diffusion portion; and an impurity diffusion isolation region for element isolation regions other than the shallow trench element isolation region.
    Type: Application
    Filed: January 4, 2008
    Publication date: August 21, 2008
    Applicant: Sony Corporation
    Inventors: Kazuichiro Itonaga, Yu Oya